Room temperature ferromagnetic materials with perpendicular magnetic anisotropy are widely sought after for spintronics, magnetic data storage devices, and stochastic computing. To address this need, a new Fe-BaTiO3 vertically aligned nanocomposite (VAN) has been fabricated—combining both the strong room temperature ferromagnetic properties of the Fe nanopillars and the strong room temperature ferroelectric

Electrical energy storage (EES) exploiting secondary battery technologies is ideal for large-scale energy storage needs due to the rapid growth in proliferation of renewable energy sources and the emerging markets of grid-scale battery applications. Sodium-ion batteries (SIBs), a more sustainable EES option alternative to lithium-ion batteries (LIBs), have attracted intensive interests over the past

Achieving higher energy density is a very important target for the next-generation lithium-ion batteries (LIBs), which requires the innovation of electrode materials. Using multi-electron reaction electrodes for higher capacity is an effective approach to achieve the goal for higher energy density. Vanadium-based materials are an important group that can realize multi-electron reactions because of

Two-dimensional (2D) material nanosheets have been widely investigated for gas separation due to their atomic thick layered structures. For 2D nanosheet, there mainly are two transport paths for the gas: (1) the pores in the nanosheet plane; and (2) the nanoslits constructed by layer-stacked nanosheets. The in-plane pores separate the gases by size-exclusion or functional groups on the pores. The 2D

High-dense garnet electrolytes have sufficient mechanical strength and ion transference number of unity, through which blocking of Li penetration is expected. Nevertheless, the situation of Li growth through the solid garnet electrolyte is even worse than that in the case of liquid electrolyte. Many investigations have been carried out in terms of mechanism analysis and solution exploration. In this

As the foremost semiconductor, silicon (Si) is the ‘lifeblood’ of the modern microelectronics and optoelectronics industries. The development of Si infrared (IR) photodetectors is of great significance for Si-based optoelectronic integration and communication. The use of black Si, which can extend the absorption edge of the Si bandgap to IR wavelengths below the bandgap, is a promising strategy to