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Table of Contents IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-21
Presents the table of contents for this issue of the publication.
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IEEE Journal of Photovoltaics IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-21
Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
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New Editor-in-Chief Announcement IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-21
Reports on the new Editor-in-Chief for this publication.
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Modeling the Impact of Bulk Resistivity on Bifacial n-PERT Rear-Junction Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-11 Zih-Wei Peng; Lejo J. Koduvelikulathu; Radovan Kopecek
This work mainly focuses on modeling the impact of bulk resistivity $ \rho_b $ on the bifacial n -type passivated emitter rear and totally diffused rear-junction ( n -PERT-RJ) solar cells using Quokka3. Through simulation, under the front illumination, the light-generated excess carrier flow behavior in the bulk is studied. The regulatory function of the rear-junction solar cells’ bulk on the electron
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Hole-Selective Front Contact Stack Enabling 24.1%-Efficient Silicon Heterojunction Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-14 Mathieu Boccard; Luca Antognini; Vincent Paratte; Jan Haschke; Minh Truong; Jean Cattin; Julie Dréon; Wenjie Lin; Laurie-Lou Senaud; Bertrand Paviet-Salomon; Sylvain Nicolay; Matthieu Despeisse; Christophe Ballif
The window-layer stack limits the efficiency of both-side-contacted silicon heterojunction solar cells. We discuss here the combination of several modifications to this stack to improve its optoelectronic performance. These include the introduction of a nanocrystalline silicon-oxide p-type layer in lieu of the amorphous silicon p-type layer, replacing indium tin oxide with a zirconium-doped indium
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Electrical and Temperature Behavior of the Forward DC Resistance With Potential Induced Degradation of the Shunting Type in Crystalline Silicon Photovoltaic Cells and Modules IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-23 Michalis Florides; George Makrides; George E. Georghiou
Potential-induced degradation (PID) is an unsolved and major power degradation mechanism that affects photovoltaic (PV) cells, and the tendency to increase the operating voltage of PV systems will render it worse, affecting their reliability. A method, which can detect PID at an early stage, can alleviate reliability issues, safeguarding high energy output. The measurement of the forward dc resistance
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Electrical Characterization of Thermally Activated Defects in n-Type Float-Zone Silicon IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-29 Yan Zhu; Fiacre Rougieux; Nicholas E. Grant; Joyce Ann T. De Guzman; John D. Murphy; Vladimir P. Markevich; Gianluca Coletti; Anthony R. Peaker; Ziv Hameiri
Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However, recent studies have revealed that detrimental defects can be thermally activated in FZ silicon wafers and lead to a reduction of carrier lifetime by up to two orders of magnitude. A robust methodology which combines different characterization techniques and passivation schemes is used to provide new insight into
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Effective Surface Texturing of Diamond-Wire-Sawn Multicrystalline Silicon Wafers Via Crystallization of the Native Surface Amorphous Layer IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-16 Yujin Jung; Jongwon Ko; Soohyun Bae; Yoonmook Kang; Hae-Seok Lee; Donghwan Kim
To increase the market shares of multicrystalline silicon (mc-Si) wafers obtained using diamond-wire sawing (DWS), it is necessary to develop efficient and cost-effective texturing methods. Surface texturing processes that increase light absorption are essential for manufacturing high-efficiency solar cells. The smooth surface, phase transformations, and amorphous silicon (a-Si) layer on mc-Si wafers
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19.2%-Efficient Multicrystalline Silicon Solar Cells via Additive-Free Mechanical Grinding Surface Pretreatment for Diamond-Wire-Sawn Wafers IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-09 Yujin Jung; Kwan Hong Min; Soohyun Bae; Yoonmook Kang; Hae-Seok Lee; Donghwan Kim
The introduction of diamond wire sawing (DWS) technology has resulted in significant cost reduction in the fabrication of crystalline silicon wafers. However, the DWS process results in parallel wheel marks, saw damage, and formation of an amorphous silicon layer on the surface, which causes difficultly in effectively forming the desired surface texture using conventional acidic etching (also known
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A Detailed Chemical Model for the Diffusion of Phosphorus Into the Silicon Wafer During POCl3 Diffusion IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-03 Philip Jäger; Verena Mertens; Ulrike Baumann; Thorsten Dullweber
The POCl 3 diffusion is the main technology to form the p-n junction of industrial silicon solar cells. However, the diffusion mechanism of phosphorus (P) into the silicon wafer is not fully understood. In this article, we study the P diffusion mechanism during drive-in by systematically varying the drive-in time in the oxygen (O 2 ) atmosphere and subsequently in nitrogen (N 2 ). When increasing the
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Microcrystalline Silicon Tunnel Junction for Monolithic Tandem Solar Cells Using Silicon Heterojunction Technology IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-26 Apolline Puaud; Anne-Sophie Ozanne; Laurie-Lou Senaud; Delfina Muñoz; Charles Roux
In this article, we developed a microcrystalline silicon tunnel junction to be used as a tunnel recombination junction between a large-gap top cell and a silicon heterojunction bottom cell, in a monolithic tandem integration. This junction is composed of a p-type layer on the top of an n-type layer, deposited by plasma-enhanced chemical vapor deposition at low temperature (200 °C). Microcrystalline
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Impact of Substrate Thickness on the Degradation in Multicrystalline Silicon IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-30 Utkarshaa Varshney; Moonyong Kim; Muhammad Umair Khan; Phillip Hamer; Catherine Chan; Malcolm Abbott; Bram Hoex
Light and elevated-temperature-induced degradation (LeTID) is a well-known phenomenon that reduces the bulk lifetime in silicon wafers. The cause of this degradation mechanism is still under investigation. However, a wide range of empirical trends that correlate LeTID with multiple physical and processing parameters have been reported, including the observation that wafers thinner than 120 μm do not
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Temperature and Intensity Dependence of the Limiting Efficiency of Silicon Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-26 D. Akira Engelbrecht; Thomas Tiedje
The temperature and intensity dependence of the limiting efficiencies of monofacial and bifacial silicon solar cells are calculated from the physical properties of silicon assuming light trapping by Lambertian scattering from rough surfaces. The maximum efficiency of a bifacial cell (28.92%) is lower than the efficiency of a monofacial cell (29.46%) at room temperature and Air Mass 1.5 Global illumination
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Pathways and Potentials for III–V on Si Tandem Solar Cells Realized Using a ZnO-Based Transparent Conductive Adhesive IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-02 Ulrike Heitmann; Jonas Bartsch; Sven Kluska; Hubert Hauser; Oliver Höhn; Richard Hermann; David Lackner; Stefan Janz; Stefan W. Glunz
This work presents a new type of transparent conductive adhesive and its electrical and optical properties with regards to an application in III–V on Silicon tandem solar cells. The developed adhesive is based on a doped ZnO and deposited by spray coating. The optical interconnection of the two sub-cells is identified as one of the major challenges due to the reflectance at the bond and possible approaches
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Epitaxial Lift-Off of Single-Junction GaAs Solar Cells Grown Via Hydride Vapor Phase Epitaxy IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-10 Yasushi Shoji; Ryuji Oshima; Kikuo Makita; Akinori Ubukata; Takeyoshi Sugaya
Hydride vapor phase epitaxy (HVPE) is attracting attention as a technology for reducing the epitaxial cost of III–V solar cells. To further reduce manufacturing costs, it is effective to combine HVPE with substrate-reuse technology using epitaxial lift-off (ELO). However, ELO of solar cells grown via HVPE has not yet been demonstrated. Although Al(Ga)As is typically used as the release layer for the
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Mechanism for Enhancing Photocurrent of Hot Electron Collection Solar Cells by Adding LiF on the Outmost MAPbI3 Perovskite Layer IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-24 Li Ping Liao; Gang Wang; Yan Qing Yao; Lian Bin Niu; CunYun Xu; Guang Dong Zhou; Ping Li; Qun Liang Song
Organic-inorganic hybrid perovskite has been verified as a suitable semiconductor for hot carrier solar cells via transient absorption spectroscopy. Recently, an internally photoemitted hot carrier (IPHC) solar cell with a novel and innovative structure based on organic-inorganic hybrid perovskite has been achieved. This is a breakthrough in hot carrier study based on perovskite material. To further
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Enhanced Performance of Dye-Sensitized Solar Cells Via the Synergic Effect of Hierarchical TiO2 Networks and Au Nanoparticle Decoration IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-09 Yuan Li; Jie Xie; Yong Wang; Jun Cheng; Zhiqiang Guo; Wei Zhang; Lei Wan; Haihong Niu; Jinzhang Xu; Ru Zhou
The construction of favorable photoanode configurations is of great importance to enhance the performance of dye-sensitized solar cells (DSSCs). In this work, a double-layer photoanode architecture consisting of a top layer of hierarchical TiO 2 networks (HTNs) and a bottom layer of commercial P25 nanoparticles (NPs) was designed and prepared by a facile one-step hydrothermal method. This unique double-layer
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High-Efficiency Organic Photovoltaic Cells With an Antimony Quantum Sheet Modified Hole Extraction Layer IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-11 Pengchao Zhou; Weixia Lan; Jialu Gu; Min Zhao; Zhiyuan Wang; Yingjie Liao; Yuanyuan Liu; Huayan Pu; Jiheng Ding; Bin Wei
2D materials with unique opto-electronic properties have shown immense potential for application in organic photovoltaics (OPVs). In this article, we reported a facile and efficient strategy to enhance the device performance of OPVs by doping 2D material of antimonene quantum sheets (AMQSs) into PEDOT:PSS emulsion. The interfacial properties between the hole extraction layer (HEL) and PBDB-T:ITIC-based
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Optimizing Deposition Parameters of DSSCs Composed of Blue TiO2 IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-30 Aycan Atli; Irem Sutcu; Z. Kerem Yildiz; Abdullah Yildiz
Here, a simple deposition process is developed to fabricate dye-sensitized solar cells (DSSCs) covering a titanium dioxide (TiO 2 ) compact layer successfully produced by either soaking into a blue titania solution or by spin coating method. The components of photoanode of the devices were sintered at 500 °C with/without employing a preheating treatment. The effects of the method to obtain the compact
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Correct Settings of a Joint Unmanned Aerial Vehicle and Infrared Camera System for the Detection of Faulty Photovoltaic Modules IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-09 Silvano Vergura
The technological development of photovoltaic (PV) devices (perovskite-based or bifacial modules, etc.) has progressed considerably, but the commercial PV modules do not show analogous improvements and their efficiency is still low. Therefore, a diagnostic tool that can check the current operation of installed PV modules and their aging is important. In this scenario, an unmanned aerial vehicle (UAV)
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Optical and Thermal Emission Benefits of Differently Textured Glass for Photovoltaic Modules IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-05 Zibo Zhou; Yajie Jiang; Ned Ekins-Daukes; Mark Keevers; Martin A. Green
Textured glass is a possible means for reflection reduction of a photovoltaic module. Texturing not only increases the energy yield of the system through reduced reflection losses, but also can play a role in dissipating waste heat through enhancing convective and radiative heat loss. In this work, we describe three textured glass surfaces analytically and model them numerically at optical (400–1050 nm)
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Postproduction Coloring of Photovoltaic Modules With Imprinted Textiles IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-16 Timo Gewohn; Malte R. Vogt; Bianca Lim; Carsten Schinke; Rolf Brendel
We present a customizable and potentially cost-efficient technique of coloring photovoltaic modules by laminating colored textiles onto photovoltaic cover glass (CoTex). A white nonwoven fabric is imprinted with any color, design, or graphic and is then laminated onto an arbitrary, frameless photovoltaic module. The short-circuit current losses of these modules range from 12% to 32% and depend on the
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Performance Evaluation of Silicon-Based Irradiance Sensors Versus Thermopile Pyranometer IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-30 Sameep Karki; Hesan Ziar; Marc Korevaar; Thijs Bergmans; Joop Mes; Olindo Isabella
There are several sensors available in the market to measure the plane-of-array irradiance for photovoltaic applications. The prices of these sensors vary according to the design, calibration procedure, and conducted characterization. In this article, two types of silicon-based sensors with and without temperature correction capabilities are compared with a high-accuracy thermopile pyranometer to check
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In-Plane Residual Stress Map for Solar PV Module: A Unified Approach Accounting the Manufacturing Process IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-19 M. Mathusuthanan; Karthic R. Narayanan; Jayabal K
The photovoltaic (PV) cell fracture reduces the efficiency of solar PV modules and the residual stresses generated in the silicon cells by various stages of manufacturing process are attributed as one of the primary reasons among others. In this study, a unified approach to investigate the residual stresses present across the PV module owing to differing material properties and thermal cycles during
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Comparative Analysis of Site-Specific Soiling Losses on PV Power Production IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-05 Øystein Øvrum; Jorge M. Marchetti; Serkan Kelesoglu; Erik Stensrud Marstein
The rapid global expansion of utility-scale solar power parks has led to an increased effort to overcome the challenges related to accumulated soiling on PV panels. So far, little attention has been paid to the differing impacts of various dust types. This article focuses on the decreased transmission of sunlight through the PV cover glass with an increased level of dust layer density. The loss in
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Outdoor Implied Current–Voltage Measurements of an Individual Encapsulated Cell in a Module IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-03 Raghavi Bhoopathy; Oliver Kunz; Robert William Dumbrell; Thorsten Trupke; Ziv Hameiri
The performance of solar cells influences the reliability, lifetime, cost, and safety of photovoltaic power plants. The electrical performance of these cells, as well as, their degradation rates over time, can vary between individual cells within the same photovoltaic module. Current–voltage measurements can provide detailed data on cell performance, however, it cannot be performed on individual cells
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Spatially Resolved Determination of Metallization-Induced Recombination Losses Using Photoluminescence Imaging IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-27 David Herrmann; David R. C. Falconi; Sabrina Lohmüller; Daniel Ourinson; Andreas Fell; Hannes Höffler; Andreas Arnold Brand; Andreas Wolf
Metallization induced recombination losses are one dominant loss mechanism for current industrial solar cells. A precise determination of these losses is important for contacting technology optimization, as well as precise solar cell modeling. Usually, for state-of-the-art approaches to determine j 0,met , it is assumed that the samples itself exhibit spatially uniform properties (e.g., carrier lifetime
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Estimating Generated Power of Photovoltaic Systems During Cloudy Days Using Gene Expression Programming IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-19 Hasanain A. H. Al-Hilfi; Ahmed Abu-Siada; Farhad Shahnia
Short-term irradiance variability because of the passing clouds of unknown size, direction, and speed is a key issue for power grid planners because of the unexpected fluctuation in the generated power of photovoltaic (PV) systems. In order to handle this issue, several models have been presented in the literature to estimate the variability of the PV systems output power during cloudy and partial
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Detection and Localization of Damaged Photovoltaic Cells and Modules Using Spread Spectrum Time Domain Reflectometry IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-26 Mashad Uddin Saleh; Chris Deline; Evan J. Benoit; Samuel R. Kingston; Joel B. Harley; Cynthia M. Furse; Michael A. Scarpulla
The operating efficiency of photovoltaic (PV) plants can be improved if damaged or degraded modules can be detected and identified. Currently, string-level power electronics can detect problems with modules or cabling but not locate them, which would facilitate addressing these issues. Here, we investigate the ability of spread spectrum time domain reflectometry (SSTDR) to both detect and locate/identify
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Fault Detection for Photovoltaic Systems Using Multivariate Analysis With Electrical and Environmental Variables IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-04 Gyu Gwang Kim; Wonbin Lee; Byeong Gwan Bhang; Jin Ho Choi; Hyung-Keun Ahn
Fault detection and repair of the components of photovoltaic (PV) systems are essential to avoid economic losses and facility accidents, thereby ensuring reliable and safe systems. This article presents a method to detect faults in a PV system based on power ratio (PR), voltage ratio (VR), and current ratio (IR). The lower control limit (LCL) and upper control limit (UCL) of each ratio were defined
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Parameter Extraction of Single-Diode Model From Module Datasheet Information Using Temperature Coefficients IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-18 Shigeomi Hara
The single-diode model (SDM) is used widely for modeling of photovoltaic cells and modules because of its simplicity and accuracy. The main objective of this article is to propose a new method to estimate the five unknown parameters of the SDM under standard test conditions using the module datasheet information (MDI) alone. The proposed method specifically uses the temperature coefficient (TC) of
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Photovoltaic Fault Diagnosis Via Semisupervised Ladder Network With String Voltage and Current Measures IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-04 Shi-Qun Chen; Geng-Jie Yang; Wei Gao; Mou-Fa Guo
In recent years, many supervised learning algorithms have been successfully applied for photovoltaic (PV) fault diagnosis. In practice, it is not possible to effectively obtain labels of large samples, limiting the engineering application of these algorithms. As for the unsupervised learning algorithm, it is completely adaptive learning, requiring a large number of samples to better learn the potential
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A Device Model for Rb-Conditioned Chalcopyrite Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-04 Tim Kodalle; Hasan A. Yetkin; Alejandra Villanueva Tovar; Tobias Bertram; Reiner Klenk; Rutger Schlatmann; Christian A. Kaufmann
We present a comprehensive device model for Cu(In,Ga)Se $_{2}$ (CIGSe) thin-film solar cells based on numerical SCAPS-1D simulations. The model reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of a Rb-free reference device, a sample that underwent an RbF-treatment, and a sample based on a CIGSe/RbInSe $_{2}$ -stack. According to this model, and in agreement
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TechRxiv: Share Your Preprint Research with the World! IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-18
Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.
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Information for authors IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-12-21
These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.
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2020 Index IEEE Journal of Photovoltaics Vol. 10 IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-11-16
Presents the 2020 subject/author index for this publication.
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Table of Contents IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-20
Presents the table of contents for this issue of the publication.
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IEEE Journal of Photovoltaics IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-20
Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
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Editorial Kudos to J-PV Reviewers IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-20 Timothy Anderson
Provides a note of thanks to J-PV reviewers.
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Golden List IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-20
Lists the names of reviewers who have contributed to this journal.
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Bifacial PERC Solar Cell Designs: Bulk and Rear Properties and Illumination Condition IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-08-17 Takaya Sugiura; Satoru Matsumoto; Nobuhiko Nakano
We report on the evaluation of cell performances of the bifacial passivated emitter and rear cell (PERC) structures for both p- and n-type Cz-Si. We compared four conditions: Front-side illumination, with and without the rear metal contact, rear-side illumination, and double-side illumination. Furthermore, the effects of the rear contact area and the rear passivation surface recombination velocity
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Novel Double Acidic Texturing Process for Saw-Damage-Free Kerfless Multicrystalline Silicon Wafers IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-08-17 Yujin Jung; Soohyun Bae; Hae-Seok Lee; Donghwan Kim; Yoonmook Kang
Since the kerfless wafer method for manufacturing multicrystalline silicon (mc-Si) wafers does not involve a sawing process, there occurs no saw damage on the surface, and the product is characterized by a flat surface morphology. These wafers cannot be effectively textured under the conditions of a conventional acidic etching solution with stability or efficiency because the surfaces are free of the
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Research of Annealing and Boron Doping on SiOx/p+-Poly-Si Hole-Selective Passivated Contact IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-08 Yunpeng Li; Feng Ye; Yuqiao Liu; Wenhao Cai; Shubo Wang; Guanggui Cheng; Ningyi Yuan; Jianning Ding
Advanced contact structures typically feature both low contact resistance ρc and low recombination current densities J 0 . Carrier-selective passivated contact is a widely adopted approach. Electron-selective passivated contact structures based on SiO x /n + -poly-Si have been extensively studied. Excellent passivation quality with J 0 down to 1 fA/cm 2 and low contact resistivity less than 1 mΩ·cm
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Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-14 Abigail R. Meyer; Vincenzo LaSalvia; William Nemeth; Wanxing Xu; Matthew Page; David L. Young; Sumit Agarwal; Paul Stradins
Monocrystalline Si solar cells are fabricated from Czochralski (Cz) Si, which contains 10 17 –10 18 cm −3 oxygen atoms. Cz Si undergoes degradation during high-temperature thermal processing steps, such as dopant diffusion to form the p - n junction. This degradation in the bulk minority carrier lifetime can be related to the formation of oxygen precipitates. We found that a high-temperature annealing
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Unraveling the Hole-Selective Nature of Si/MoOX Heterojunction IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-15 Swasti Bhatia; Aldrin Antony; Pradeep R. Nair
MoO X has emerged as an effective hole-selective layer for Si based heterojunction solar cells on account of its high workfunction. The hole selectivity of MoO X is fundamentally different from other carrier selective films as it does not have an electron blocking energy barrier in form of conduction band offset with Si. Accordingly, much is unknown about the hole-selective nature of Si/MoO X junction
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Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-17 Matthew B. Hartenstein; William Nemeth; Vincenzo LaSalvia; Steve Harvey; Harvey Guthrey; San Theingi; Matthew Page; David L. Young; Paul Stradins; Sumit Agarwal
Polycrystalline silicon on silicon oxide (poly - Si/SiO x ) passivating contacts enable ultrahigh-efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type-doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly - Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated
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Optimization of Front Diffusion Profile in Bifacial Interdigitated Back Contact Solar Cell IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-16 Takaya Sugiura; Satoru Matsumoto; Nobuhiko Nakano
The diffusion profiles of the front floating emitter (FFE) and front surface field (FSF) in a bifacial interdigitated back contact solar cell are optimized. The optimization results revealed that the FFE and FSF schemes are beneficial for enhancing the cell performance at the front and rear sides, respectively. Lighter doping is particularly better for the FSF scheme, and the FFE scheme requires a
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Temporary Recovery of the Defect Responsible for Light- and Elevated Temperature-Induced Degradation: Insights Into the Physical Mechanisms Behind LeTID IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-30 Wolfram Kwapil; Jonas Schön; Tim Niewelt; Martin C. Schubert
The effect of light- and elevated temperature-induced degradation (LeTID) can be nonpermanently reversed by charge carrier injection below the degradation temperature (commonly used degradation temperatures are above ∼70 °C). In this study, we show that the rate of temporary recovery depends strongly on the excess carrier density. We observe that the order of the reaction changes from pseudo-zero to
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Improved Analysis of Gridline TLM Pattern Including Effect of Uncontacted Gridlines IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-23 Daniel L. Meier; Vinodh Chandrasekaran; Brian J. Meier
Contact resistivity ( ρc ) for silicon solar cells is often measured using a pseudo-TLM pattern of equally spaced gridlines, which is cut from the cell itself. In this measurement, the uncontacted (floating) gridlines between two contacted gridlines are usually assumed to be disconnected from the silicon sheet. Analysis of such TLM data yields an approximate value of ρc , which is reasonably accurate
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Influence of the Carbon Concentration on (p) Poly-SiCx Layer Properties With Focus on Parasitic Absorption in Front Side Poly-SiCx/SiOx Passivating Contacts of Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-25 Jonathan Steffens; Swetlana Weit; Johannes Rinder; Raphael Glatthaar; Sören Möller; Giso Hahn; Barbara Terheiden
Passivating contacts based on polycrystalline silicon (poly-Si) on an interfacial oxide are limited by parasitic absorption, which may be reduced by incorporation of foreign elements in the poly-Si layer. In this study, the influence of carbon incorporation in the concentration range of 6.9–21.5 at% on boron-doped polycrystalline silicon carbide (poly-SiC x ) layer properties is investigated and interpreted
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Silicon Surface Passivation by Atomic Layer Deposited Hafnium Oxide Films: Trap States Investigation Using Constant Voltage Stress Studies IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-24 Shweta Tomer; Meenakshi Devi; Abhishek Kumar; Subha Laxmi; C. M. S. Rauthan; Vandana Vandana
Excellent silicon surface passivation is demonstrated by the HfO x film deposited using optimized atomic layer deposition (ALD) process. For pristine films, surface recombination velocity (SRV) as low as ∼29 cm/s is achieved. The highest effective lifetime of 3 ms, corresponding to SRV of ∼5 cm/s, is achieved for hydrogen ambient annealed films. Capacitance–voltage and conductance–voltage measurements
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Impact of Local Back-Surface-Field Thickness on Open-Circuit Voltage in PERC Solar Cells: An Experimental Study Applying ANOVA to Determine Critical Sample Size Necessary to Differentiate Mean LBSF Values With Statistical Significance IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-12 Matthias Müller; Bettina Wolpensinger; Byungsul Min; Gerd Fischer; Phedon Palinginis; Dirk Holger Neuhaus
Sufficiently deep local back-surface-fields (LBSF) are crucial for achieving low contact recombination and thus high solar cell efficiencies in passivated emitter and rear contact (PERC) solar cells. In this article, we investigate spatial variations of LBSF thickness 1) across dashed contacts, 2) between lateral positions within a cell, and 3) from cell to cell. The objective of this experimental
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The Race for Lowest Costs of Electricity Production: Techno-Economic Analysis of Silicon, Perovskite and Tandem Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-30 Lisa Anna Zafoschnig; Sebastian Nold; Jan Christoph Goldschmidt
Approaching efficiency limits for silicon photovoltaics and impressive efficiency gains for new perovskite and perovskite silicon tandem solar cells trigger the question, which technology will be the most economically attractive option in the future. With a bottom-up approach we estimate the manufacturing costs of modules based on silicon, perovskite single junction, and perovskite silicon tandem solar
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Nanosecond Pulsed Laser Patterning of Interdigitated Back Contact Heterojunction Silicon Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-08 Arpan Sinha; Anishkumar Soman; Ujjwal Das; Steven Hegedus; Mool C. Gupta
Careful control of the laser patterning for the fabrication of an interdigitated back contact heterojunction (IBC-HJ) solar cell is needed to avoid laser-induced defects and heat-induced crystallization, which can produce higher carrier recombination and lower power conversion efficiency. The results of nanosecond laser patterning of an IBC-HJ test structure are reported, and it was shown that optimized
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Device Characterization of a Sulfur-Implanted p$^{++}$/p GaSb Photovoltaic Camel Diode IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-03 Daniel J. Herrera; Michael B. Clavel; Mantu K. Hudait; Luke F. Lester
The implantation and rapid thermal annealing of sulfur (S + ) ions has previously been shown to be an effective method in non-epitaxially attaining hole carrier concentrations as high as $1\times {10^{19}} \; \rm cm^{-3}$ in gallium antimonide (GaSb). This technique was used to fabricate a photovoltaic diode by delta-doping the front surface of a p-type GaSb substrate and forming a p ++ /p junction
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Thin Gallium Arsenide Solar Cells With Maskless Back Surface Reflectors IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-09-10 Julia R. D’Rozario; Stephen J. Polly; George T. Nelson; Seth M. Hubbard
This work investigates the optical performance of a textured back surface reflector (BSR) produced by a maskless solution-based wet chemical etch in Al $_\text{0.3}$ Ga $_\text{0.7}$ As for a 1.1- $\mu$ m-thick GaAs solar cell. Combining the maskless texture with the 94% reflective flat mirror resulted in a high haze in reflectance near 80% across the GaAs absorbing region. The increased diffuse reflectance
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Application of a Genetic Algorithm in Four-Terminal Perovskite/Crystalline-Silicon Tandem Devices IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-10-08 Arsalan Razzaq; Alexandre Mayer; Valérie Depauw; Ivan Gordon; Ali Hajjiah; Jef Poortmans
Perovskite/crystalline-silicon (c-Si) tandem solar cells offer a viable roadmap for reaching power conversion efficiencies beyond 30%. In this configuration, however, the silicon cell now mainly receives an infrared rich illumination spectrum where the absorption coefficient of silicon is poor. To boost the light absorption in this wavelength interval, transmitted through the top cell, a solution is
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An Analytic Approach to the Modeling of Multijunction Solar Cells IEEE J. Photovolt. (IF 3.052) Pub Date : 2020-08-19 Rune Strandberg
Analytic expressions for the $JV$ -characteristics of three types of multijunction configurations are derived. From these, expressions for the short-circuit current, open-circuit voltage, and voltage at the maximum power point are found for multiterminal devices, and for series-connected tandem stacks. For voltage-matched devices, expressions for the optimal ratio of the number of bottom cells to the
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