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This work mainly focuses on modeling the impact of bulk resistivity $ \rho_b $ on the bifacial n -type passivated emitter rear and totally diffused rear-junction ( n -PERT-RJ) solar cells using Quokka3. Through simulation, under the front illumination, the light-generated excess carrier flow behavior in the bulk is studied. The regulatory function of the rear-junction solar cells’ bulk on the electron

The window-layer stack limits the efficiency of both-side-contacted silicon heterojunction solar cells. We discuss here the combination of several modifications to this stack to improve its optoelectronic performance. These include the introduction of a nanocrystalline silicon-oxide p-type layer in lieu of the amorphous silicon p-type layer, replacing indium tin oxide with a zirconium-doped indium

Potential-induced degradation (PID) is an unsolved and major power degradation mechanism that affects photovoltaic (PV) cells, and the tendency to increase the operating voltage of PV systems will render it worse, affecting their reliability. A method, which can detect PID at an early stage, can alleviate reliability issues, safeguarding high energy output. The measurement of the forward dc resistance

Float-zone (FZ) silicon is usually assumed to be bulk defect-lean and stable. However, recent studies have revealed that detrimental defects can be thermally activated in FZ silicon wafers and lead to a reduction of carrier lifetime by up to two orders of magnitude. A robust methodology which combines different characterization techniques and passivation schemes is used to provide new insight into

To increase the market shares of multicrystalline silicon (mc-Si) wafers obtained using diamond-wire sawing (DWS), it is necessary to develop efficient and cost-effective texturing methods. Surface texturing processes that increase light absorption are essential for manufacturing high-efficiency solar cells. The smooth surface, phase transformations, and amorphous silicon (a-Si) layer on mc-Si wafers

The introduction of diamond wire sawing (DWS) technology has resulted in significant cost reduction in the fabrication of crystalline silicon wafers. However, the DWS process results in parallel wheel marks, saw damage, and formation of an amorphous silicon layer on the surface, which causes difficultly in effectively forming the desired surface texture using conventional acidic etching (also known

The POCl 3 diffusion is the main technology to form the p-n junction of industrial silicon solar cells. However, the diffusion mechanism of phosphorus (P) into the silicon wafer is not fully understood. In this article, we study the P diffusion mechanism during drive-in by systematically varying the drive-in time in the oxygen (O 2 ) atmosphere and subsequently in nitrogen (N 2 ). When increasing the

In this article, we developed a microcrystalline silicon tunnel junction to be used as a tunnel recombination junction between a large-gap top cell and a silicon heterojunction bottom cell, in a monolithic tandem integration. This junction is composed of a p-type layer on the top of an n-type layer, deposited by plasma-enhanced chemical vapor deposition at low temperature (200 °C). Microcrystalline

Light and elevated-temperature-induced degradation (LeTID) is a well-known phenomenon that reduces the bulk lifetime in silicon wafers. The cause of this degradation mechanism is still under investigation. However, a wide range of empirical trends that correlate LeTID with multiple physical and processing parameters have been reported, including the observation that wafers thinner than 120 μm do not

The temperature and intensity dependence of the limiting efficiencies of monofacial and bifacial silicon solar cells are calculated from the physical properties of silicon assuming light trapping by Lambertian scattering from rough surfaces. The maximum efficiency of a bifacial cell (28.92%) is lower than the efficiency of a monofacial cell (29.46%) at room temperature and Air Mass 1.5 Global illumination

This work presents a new type of transparent conductive adhesive and its electrical and optical properties with regards to an application in III–V on Silicon tandem solar cells. The developed adhesive is based on a doped ZnO and deposited by spray coating. The optical interconnection of the two sub-cells is identified as one of the major challenges due to the reflectance at the bond and possible approaches

Hydride vapor phase epitaxy (HVPE) is attracting attention as a technology for reducing the epitaxial cost of III–V solar cells. To further reduce manufacturing costs, it is effective to combine HVPE with substrate-reuse technology using epitaxial lift-off (ELO). However, ELO of solar cells grown via HVPE has not yet been demonstrated. Although Al(Ga)As is typically used as the release layer for the

Organic-inorganic hybrid perovskite has been verified as a suitable semiconductor for hot carrier solar cells via transient absorption spectroscopy. Recently, an internally photoemitted hot carrier (IPHC) solar cell with a novel and innovative structure based on organic-inorganic hybrid perovskite has been achieved. This is a breakthrough in hot carrier study based on perovskite material. To further

The construction of favorable photoanode configurations is of great importance to enhance the performance of dye-sensitized solar cells (DSSCs). In this work, a double-layer photoanode architecture consisting of a top layer of hierarchical TiO 2 networks (HTNs) and a bottom layer of commercial P25 nanoparticles (NPs) was designed and prepared by a facile one-step hydrothermal method. This unique double-layer

2D materials with unique opto-electronic properties have shown immense potential for application in organic photovoltaics (OPVs). In this article, we reported a facile and efficient strategy to enhance the device performance of OPVs by doping 2D material of antimonene quantum sheets (AMQSs) into PEDOT:PSS emulsion. The interfacial properties between the hole extraction layer (HEL) and PBDB-T:ITIC-based

Here, a simple deposition process is developed to fabricate dye-sensitized solar cells (DSSCs) covering a titanium dioxide (TiO 2 ) compact layer successfully produced by either soaking into a blue titania solution or by spin coating method. The components of photoanode of the devices were sintered at 500 °C with/without employing a preheating treatment. The effects of the method to obtain the compact

The technological development of photovoltaic (PV) devices (perovskite-based or bifacial modules, etc.) has progressed considerably, but the commercial PV modules do not show analogous improvements and their efficiency is still low. Therefore, a diagnostic tool that can check the current operation of installed PV modules and their aging is important. In this scenario, an unmanned aerial vehicle (UAV)

Textured glass is a possible means for reflection reduction of a photovoltaic module. Texturing not only increases the energy yield of the system through reduced reflection losses, but also can play a role in dissipating waste heat through enhancing convective and radiative heat loss. In this work, we describe three textured glass surfaces analytically and model them numerically at optical (400–1050 nm)

We present a customizable and potentially cost-efficient technique of coloring photovoltaic modules by laminating colored textiles onto photovoltaic cover glass (CoTex). A white nonwoven fabric is imprinted with any color, design, or graphic and is then laminated onto an arbitrary, frameless photovoltaic module. The short-circuit current losses of these modules range from 12% to 32% and depend on the

There are several sensors available in the market to measure the plane-of-array irradiance for photovoltaic applications. The prices of these sensors vary according to the design, calibration procedure, and conducted characterization. In this article, two types of silicon-based sensors with and without temperature correction capabilities are compared with a high-accuracy thermopile pyranometer to check

The photovoltaic (PV) cell fracture reduces the efficiency of solar PV modules and the residual stresses generated in the silicon cells by various stages of manufacturing process are attributed as one of the primary reasons among others. In this study, a unified approach to investigate the residual stresses present across the PV module owing to differing material properties and thermal cycles during

The rapid global expansion of utility-scale solar power parks has led to an increased effort to overcome the challenges related to accumulated soiling on PV panels. So far, little attention has been paid to the differing impacts of various dust types. This article focuses on the decreased transmission of sunlight through the PV cover glass with an increased level of dust layer density. The loss in

The performance of solar cells influences the reliability, lifetime, cost, and safety of photovoltaic power plants. The electrical performance of these cells, as well as, their degradation rates over time, can vary between individual cells within the same photovoltaic module. Current–voltage measurements can provide detailed data on cell performance, however, it cannot be performed on individual cells

Metallization induced recombination losses are one dominant loss mechanism for current industrial solar cells. A precise determination of these losses is important for contacting technology optimization, as well as precise solar cell modeling. Usually, for state-of-the-art approaches to determine j 0,met , it is assumed that the samples itself exhibit spatially uniform properties (e.g., carrier lifetime

Short-term irradiance variability because of the passing clouds of unknown size, direction, and speed is a key issue for power grid planners because of the unexpected fluctuation in the generated power of photovoltaic (PV) systems. In order to handle this issue, several models have been presented in the literature to estimate the variability of the PV systems output power during cloudy and partial

The operating efficiency of photovoltaic (PV) plants can be improved if damaged or degraded modules can be detected and identified. Currently, string-level power electronics can detect problems with modules or cabling but not locate them, which would facilitate addressing these issues. Here, we investigate the ability of spread spectrum time domain reflectometry (SSTDR) to both detect and locate/identify

Fault detection and repair of the components of photovoltaic (PV) systems are essential to avoid economic losses and facility accidents, thereby ensuring reliable and safe systems. This article presents a method to detect faults in a PV system based on power ratio (PR), voltage ratio (VR), and current ratio (IR). The lower control limit (LCL) and upper control limit (UCL) of each ratio were defined

The single-diode model (SDM) is used widely for modeling of photovoltaic cells and modules because of its simplicity and accuracy. The main objective of this article is to propose a new method to estimate the five unknown parameters of the SDM under standard test conditions using the module datasheet information (MDI) alone. The proposed method specifically uses the temperature coefficient (TC) of

In recent years, many supervised learning algorithms have been successfully applied for photovoltaic (PV) fault diagnosis. In practice, it is not possible to effectively obtain labels of large samples, limiting the engineering application of these algorithms. As for the unsupervised learning algorithm, it is completely adaptive learning, requiring a large number of samples to better learn the potential

We present a comprehensive device model for Cu(In,Ga)Se $_{2}$ (CIGSe) thin-film solar cells based on numerical SCAPS-1D simulations. The model reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of a Rb-free reference device, a sample that underwent an RbF-treatment, and a sample based on a CIGSe/RbInSe $_{2}$ -stack. According to this model, and in agreement

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We report on the evaluation of cell performances of the bifacial passivated emitter and rear cell (PERC) structures for both p- and n-type Cz-Si. We compared four conditions: Front-side illumination, with and without the rear metal contact, rear-side illumination, and double-side illumination. Furthermore, the effects of the rear contact area and the rear passivation surface recombination velocity

Since the kerfless wafer method for manufacturing multicrystalline silicon (mc-Si) wafers does not involve a sawing process, there occurs no saw damage on the surface, and the product is characterized by a flat surface morphology. These wafers cannot be effectively textured under the conditions of a conventional acidic etching solution with stability or efficiency because the surfaces are free of the

Advanced contact structures typically feature both low contact resistance ρc and low recombination current densities J 0 . Carrier-selective passivated contact is a widely adopted approach. Electron-selective passivated contact structures based on SiO x /n + -poly-Si have been extensively studied. Excellent passivation quality with J 0 down to 1 fA/cm 2 and low contact resistivity less than 1 mΩ·cm

Monocrystalline Si solar cells are fabricated from Czochralski (Cz) Si, which contains 10 17 –10 18 cm −3 oxygen atoms. Cz Si undergoes degradation during high-temperature thermal processing steps, such as dopant diffusion to form the p - n junction. This degradation in the bulk minority carrier lifetime can be related to the formation of oxygen precipitates. We found that a high-temperature annealing

MoO X has emerged as an effective hole-selective layer for Si based heterojunction solar cells on account of its high workfunction. The hole selectivity of MoO X is fundamentally different from other carrier selective films as it does not have an electron blocking energy barrier in form of conduction band offset with Si. Accordingly, much is unknown about the hole-selective nature of Si/MoO X junction

Polycrystalline silicon on silicon oxide (poly - Si/SiO x ) passivating contacts enable ultrahigh-efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type-doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly - Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated

The diffusion profiles of the front floating emitter (FFE) and front surface field (FSF) in a bifacial interdigitated back contact solar cell are optimized. The optimization results revealed that the FFE and FSF schemes are beneficial for enhancing the cell performance at the front and rear sides, respectively. Lighter doping is particularly better for the FSF scheme, and the FFE scheme requires a

The effect of light- and elevated temperature-induced degradation (LeTID) can be nonpermanently reversed by charge carrier injection below the degradation temperature (commonly used degradation temperatures are above ∼70 °C). In this study, we show that the rate of temporary recovery depends strongly on the excess carrier density. We observe that the order of the reaction changes from pseudo-zero to

Contact resistivity ( ρc ) for silicon solar cells is often measured using a pseudo-TLM pattern of equally spaced gridlines, which is cut from the cell itself. In this measurement, the uncontacted (floating) gridlines between two contacted gridlines are usually assumed to be disconnected from the silicon sheet. Analysis of such TLM data yields an approximate value of ρc , which is reasonably accurate

Passivating contacts based on polycrystalline silicon (poly-Si) on an interfacial oxide are limited by parasitic absorption, which may be reduced by incorporation of foreign elements in the poly-Si layer. In this study, the influence of carbon incorporation in the concentration range of 6.9–21.5 at% on boron-doped polycrystalline silicon carbide (poly-SiC x ) layer properties is investigated and interpreted

Excellent silicon surface passivation is demonstrated by the HfO x film deposited using optimized atomic layer deposition (ALD) process. For pristine films, surface recombination velocity (SRV) as low as ∼29 cm/s is achieved. The highest effective lifetime of 3 ms, corresponding to SRV of ∼5 cm/s, is achieved for hydrogen ambient annealed films. Capacitance–voltage and conductance–voltage measurements

Sufficiently deep local back-surface-fields (LBSF) are crucial for achieving low contact recombination and thus high solar cell efficiencies in passivated emitter and rear contact (PERC) solar cells. In this article, we investigate spatial variations of LBSF thickness 1) across dashed contacts, 2) between lateral positions within a cell, and 3) from cell to cell. The objective of this experimental

Approaching efficiency limits for silicon photovoltaics and impressive efficiency gains for new perovskite and perovskite silicon tandem solar cells trigger the question, which technology will be the most economically attractive option in the future. With a bottom-up approach we estimate the manufacturing costs of modules based on silicon, perovskite single junction, and perovskite silicon tandem solar

Careful control of the laser patterning for the fabrication of an interdigitated back contact heterojunction (IBC-HJ) solar cell is needed to avoid laser-induced defects and heat-induced crystallization, which can produce higher carrier recombination and lower power conversion efficiency. The results of nanosecond laser patterning of an IBC-HJ test structure are reported, and it was shown that optimized

The implantation and rapid thermal annealing of sulfur (S + ) ions has previously been shown to be an effective method in non-epitaxially attaining hole carrier concentrations as high as $1\times {10^{19}} \; \rm cm^{-3}$ in gallium antimonide (GaSb). This technique was used to fabricate a photovoltaic diode by delta-doping the front surface of a p-type GaSb substrate and forming a p ++ /p junction

This work investigates the optical performance of a textured back surface reflector (BSR) produced by a maskless solution-based wet chemical etch in Al $_\text{0.3}$ Ga $_\text{0.7}$ As for a 1.1- $\mu$ m-thick GaAs solar cell. Combining the maskless texture with the 94% reflective flat mirror resulted in a high haze in reflectance near 80% across the GaAs absorbing region. The increased diffuse reflectance

Perovskite/crystalline-silicon (c-Si) tandem solar cells offer a viable roadmap for reaching power conversion efficiencies beyond 30%. In this configuration, however, the silicon cell now mainly receives an infrared rich illumination spectrum where the absorption coefficient of silicon is poor. To boost the light absorption in this wavelength interval, transmitted through the top cell, a solution is

Analytic expressions for the $JV$ -characteristics of three types of multijunction configurations are derived. From these, expressions for the short-circuit current, open-circuit voltage, and voltage at the maximum power point are found for multiterminal devices, and for series-connected tandem stacks. For voltage-matched devices, expressions for the optimal ratio of the number of bottom cells to the