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Filament-based memristor switching model Microelectron. Eng. (IF 2.3) Pub Date : 2024-03-17 A.V. Fadeev, K.V. Rudenko
The filaments rupture and recovery in oxide-type memristors have been theoretically studied. The model is based on the kinetics of oxygen vacancies and includes Joule heating of the oxide medium, which enhances the diffusion and drift of oxygen vacancies in an external electric field. The current-voltage characteristic of the model structure was obtained. Comparison with experimental results allowed
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Fabrication of nanoscale stencils through focused ion beam milling and dry transfer of silicon-on-nothing membrane with perforations Microelectron. Eng. (IF 2.3) Pub Date : 2024-03-14 Taeyeong Kim, Jungchul Lee
Nanoscale stencil lithography, providing sub-micrometer resolutions, is being implemented as a reliable patterning technique within the nanotechnology domain. Despite their advantages such as no resist processing, easy manipulation and reusability, patterning using a nanoscale stencil often faces challenges due to the gap between the nanoscale stencil and the substrate. This tends to result in unwanted
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Study of ion charging effect to improve reactive-ion-etching profile of PbSe grating structures Microelectron. Eng. (IF 2.3) Pub Date : 2024-03-09 Tehere Hemati, Gang Yang, Binbin Weng
The fabrication of narrow-slot Lead-Selenide (PbSe) gratings is critical for advancing mid-infrared (MIR) device technologies, for applications in spectroscopy, thermal imaging, and environmental monitoring. The primary challenge to achieve this goal is the increased irregularity and reactive ion etching (RIE) lag in etched profiles as slot width decreases. This research highlights the charging effect
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Double channeled nanotube gate all around field effect transistor with drive current boosted Microelectron. Eng. (IF 2.3) Pub Date : 2024-03-07 Laixiang Qin, He Tian, Chunlai Li, Yiqun Wei, Jin He, Yandong He, Tianling Ren, Zhangwei Xu, Yutao Yue
Gate all around field effect transistor (GAAFET) presents a resurgence ascribed to its enhanced gate electrostatic controllability by virtue of surrounding gate structure in coping with increasingly serious power consumption dissipation and short channel effects (SCE) degradation as the semiconductor technology enters into sub-10 nm technology node. Nanotube GAAFET (NT GAAFET) with inner and outer
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Improving performance of cathode NMC-811 by CeO2-coating for Li-ion battery Microelectron. Eng. (IF 2.3) Pub Date : 2024-03-04 Muhammad Fakhrudin, Evvy Kartini, Anne Zulfia
The high energy density layered oxide LiNiMnCoO (NMC811) holds great promise as a cathode material for future Li-ion batteries. However, its application in electric vehicles is hindered by issues such as inadequate cycle performance and rate capability. Additionally, the corrosion caused by the electrolyte poses limitations on high voltage operation. In this study, Cerium Oxide (CeO) was used to coat
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Review of the pressure sensor based on graphene and its derivatives Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-29 Yuwei Guo, Simei Zeng, Qi Liu, Jingye Sun, Mingqiang Zhu, Linan Li, Tao Deng
Pressure sensors are widely used in a variety of industrial automatic control environments and in everyday life, including production automatic control, aerospace, healthcare, electronic skin and many other industries. Different structural designs are suitable for different application scenarios. With the development of technology, the demand for high sensitivity and wide range pressure sensors is
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Recent advances in micro- and bio- electromechanical system architectures for energy efficient chemiresistors Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-28 Bharat Sharma, Mukesh Kumar, Ashutosh Sharma
The recent evolution of microelectromechanical systems (MEMSs) presents a more mature technology that expands from pure research towards multidisciplinary nanoelectromechanical systems (NEMS) research. The smaller size of NEMS makes them multifunctional, fast, energy-saving, and sensitive to any external stimuli. The extreme sensitivity of these NEMS opens new avenues to the various industrial sector
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Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-24 Dhananjay D. Kumbhar, Sanjay Kumar, Mayank Dubey, Amitesh Kumar, Tukaram D. Dongale, Somanath D. Pawar, Shaibal Mukherjee
Memristive devices have emerged as promising alternatives to traditional complementary metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems. These two-terminal electronic devices, known for their non-volatile memory properties, can emulate synaptic behavior within artificial neural networks, offering remarkable advantages, including scalability, energy efficiency, rapid
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Negative capacitance FET based dual-split control 6T-SRAM cell design for energy efficient and robust computing-in memory architectures Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-23 Birudu Venu, Tirumalarao Kadiyam, Koteswararao Penumalli, Sivasankar Yellampalli, Ramesh Vaddi
A Negative Capacitance Field effet transistor (NCFET) based Dual split control (DSC) 6T-SRAM cell has been designed and explored with Computing-in memory (CiM) architecture for energy efficient demonstration of Deep neural networks (DNN) basic operation such as Input-Weight (Dot) Product. The impact of ferro electric layer thickness (T) on the SRAM cell perfomance metrics such as read noise margin
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Investigation of thermal stress effects during annealing of hafnia-made thin film using molecular dynamics simulations Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-21 Kiran Raj, Yongwoo Kwon
Hafnia or hafnium oxide is a high- dielectric material with paramount importance in the realm of semiconductor devices. Recent advancements in 3D device structures require a few nanometer-thick conformal films on non-planar substrates. During the fabrication stage, the annealing process of thin films has been discovered to mitigate delamination issues at the film-substrate interface. However, it has
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A current mode capacitance multiplier employing a single active element based on Arbel-Goldminz cells for low frequency applications Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-16 Burak Sakacı, Deniz Özenli
In this work, a capacitor multiplier based on a Multiple Output-Voltage Difference Transconductance Amplifier (MO-VDTA) is built by using Arbel-Goldminz cells with extensive performance analysis. Considering the large chip area occupation of capacitors, capacitor multipliers are one of the most required analog building blocks in most of low frequency applications. In this respect, the obtained capacitor
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Design of multi-scroll chaotic attractor based on a novel multi-segmented memristor and its application in medical image encryption Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-09 Jiangang Zuo, Meng Wang, Jie Zhang
Medical images contain rich individual health information, making the protection of their privacy and security crucial. This study first proposes a novel multi-segment memristor based on a multi-segment linear function. Then, building upon the Sprott-B chaotic system, a mirror-symmetric memristor multi-scroll chaotic attractor (MMSCAs) is introduced by incorporating logic pulse signals and the novel
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A new characterization model of FinFET self-heating effect based on FinFET characteristic parameter Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-08 Yue Wang, Huaguo Liang, Hong Zhang, Danqing Li, Yingchun Lu, Maoxiang Yi, Zhengfeng Huang
The characterization of the self-heating effect (SHE) has been an important research topic in advanced technology, but the existing characterizations are few and the characterization process is relatively complex. In this research, a SHE characterization model is established based on the relationship between output transconductance variation (), gate source voltage () and temperature variation () caused
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Silicon microresonator arrays: A comprehensive study on fabrication techniques and pH-controlled stress-induced variations in cantilever stiffness Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-05 G. Brunetti, A. De Pastina, C. Rotella, V. Usov, G. Villanueva, M. Hegner
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A ScAlN-based piezoelectric breathing mode dual-ring resonator with high temperature stability Microelectron. Eng. (IF 2.3) Pub Date : 2024-02-01 Zhaoyang Lu, Longlong Li, Wen Chen, Yuhao Xiao, Weilong You, Guoqiang Wu
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Laser induced reverse transfer of bulk Cu with a fs-pulsed UV laser for microelectronics applications Microelectron. Eng. (IF 2.3) Pub Date : 2024-01-28 Tommaso Raveglia, Dario Crimella, Ali Gökhan Demir
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High bias stability of Hf-doping-modulated indium oxide thin-film transistors Microelectron. Eng. (IF 2.3) Pub Date : 2024-01-22 Wenwu Li, Caifang Gao, Xifeng Li, Jiayan Yang, Jianhua Zhang, Junhao Chu
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Al3Sc thin films for advanced interconnect applications Microelectron. Eng. (IF 2.3) Pub Date : 2024-01-23 Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta, Karl Opsomer, Christophe Detavernier, Joris Van de Vondel, Geoffrey Pourtois, Zsolt Tőkei, Johan Swerts, Christoph Adelmann
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Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packaging Microelectron. Eng. (IF 2.3) Pub Date : 2024-01-19 Obert Golim, Vesa Vuorinen, Tobias Wernicke, Marta Pawlak, Mervi Paulasto-Kröckel
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Engineering TiOx interlayers in high vacuum for Al-contacted MoSe2 transistors Microelectron. Eng. (IF 2.3) Pub Date : 2024-01-11 Yoobin Oh, Youngho Jo, Woong Choi
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Ta/Al/CuW low temperature ohmic contacts for GaN-on-Si HEMT Microelectron. Eng. (IF 2.3) Pub Date : 2024-01-03 Zijing Xie, Nianhe Xiong, Jun Tang, Hong Wang
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Aptasensors based on silicon nanowire field-effect transistors for electrical detection of thrombin Microelectron. Eng. (IF 2.3) Pub Date : 2023-12-30 Rony Midahuen, Valérie Stambouli, Caroline Fontelaye, Guillaume Nonglaton, Nicolas Spinelli, Sylvain Barraud
Arrays of silicon nanowire field-effect transistors (Si NWFETs) were built to detect thrombin (a model biomarker) electrically. The Si NWFETs were created using a conventional top-down CMOS process, allowing them to be co-integrated with CMOS readout circuits in the future. EHTES organosilane was then used to graft aptamer probes onto the HfO2 gate oxide of Si nanowires. We investigated the influence
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Relaxation effects on the structural and piezoelectric properties of wurtzite ZnS and CdS thin films under in-plane strain Microelectron. Eng. (IF 2.3) Pub Date : 2023-12-29 Dongsheng Wang, Xuewen Li, Guoqiang Qin
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A novel time-domain in-memory computing unit using STT-MRAM Microelectron. Eng. (IF 2.3) Pub Date : 2023-12-20 Ankana Saha, Srija Alla, Vinod Kumar Joshi
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Simulation study of three-dimensional grayscale ice lithography on amorphous solid water for blazed gratings Microelectron. Eng. (IF 2.3) Pub Date : 2023-12-16 Jinyu Guo, Shuoqiu Tian, Wentao Yuan, Xujie Tong, Rui Zheng, Shan Wu, Ding Zhao, Yifang Chen, Min Qiu
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Self-powered motion state monitoring system based on combined triboelectric nanogenerators for human physiological signal monitoring and energy collection Microelectron. Eng. (IF 2.3) Pub Date : 2023-12-02 Liangsong Huang, Xiaofei Bu, Peng Zhang, Kun Zhang, Yuxia Li, Dengxu Wang, Chao Ding
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New concept of two-cascade energy compression systems based on drift step recovery diodes Microelectron. Eng. (IF 2.3) Pub Date : 2023-11-29 A.F. Kardo-Sysoev, M.N. Cherenev, A.G. Lyublinsky, M.I. Vexler
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Design and optimization of variable gain LNA for IoT applications using meta-heuristics search algorithms Microelectron. Eng. (IF 2.3) Pub Date : 2023-11-28 Dheeraj Kalra, Mayank Srivastava
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DC operating points of Mott neuristor circuits Microelectron. Eng. (IF 2.3) Pub Date : 2023-11-10 Joseph P. Wright, Stephen A. Sarles, Jin-Song Pei
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Advanced approach of bulk (111) 3C-SiC epitaxial growth Microelectron. Eng. (IF 2.3) Pub Date : 2023-10-25 C. Calabretta, V. Scuderi, C. Bongiorno, R. Anzalone, R. Reitano, A. Cannizzaro, M. Mauceri, D. Crippa, S. Boninelli, F. La Via
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Hybridization of ellipsometry and XPS energy loss: Robust band gap and broadband optical constants determination of SiGe, HfON and MoOx thin films Microelectron. Eng. (IF 2.3) Pub Date : 2023-10-29 Théo Levert, Alter Zakhtser, Julien Duval, Chloé Raguenez, Stéphane Verdier, Delphine Le Cunff, Jean-Hervé Tortai, Bernard Pelissier
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Thermal stability, work function and Fermi level analysis of 2D multi-layered hexagonal boron nitride films Microelectron. Eng. (IF 2.3) Pub Date : 2023-10-21 Shambel Abate Marye, Ravi Ranjan Kumar, Artur Useinov, Niall Tumilty
Thermal stability and Fermi level analysis of commercial multilayer (ML) and as-grown 10 nm thick hexagonal boron nitride (hBN) films on Cu foil by atmospheric chemical vapor deposition (APCVD) by heating in N2 and air at temperatures ≤900 °C are studied. For all samples, progressive surface oxidation was observed correlating with higher hBN nucleation density. Thermal stability was measured in air
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Novel methods for locating and matching IC cells based on standard cell libraries Microelectron. Eng. (IF 2.3) Pub Date : 2023-10-21 Can Liu, Kaige Wang, Qing Li, Fazhan Zhao, Kun Zhao, Hongtu Ma
In the domain of hardware assurance, reverse engineering (RE) is essential for ensuring the security and reliability of integrated circuits (ICs). A potential approach in the crucial step of netlist extraction involves matching patterns in IC images to standard cell libraries. However, the morphological variations in images of cells and intra-cell similarities present significant challenges to effective
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Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC) Microelectron. Eng. (IF 2.3) Pub Date : 2023-10-10 Bruno Galizia, Patrick Fiorenza, Corrado Bongiorno, Béla Pécz, Zsolt Fogarassy, Emanuela Schilirò, Filippo Giannazzo, Fabrizio Roccaforte, Raffaella Lo Nigro
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Flexible pressure sensor with wide pressure range based on 3D microporous PDMS/MWCNTs for human motion detection Microelectron. Eng. (IF 2.3) Pub Date : 2023-10-13 Chun-Sheng Jiang, Ru-Yue Lv, Yan-Li Zou, Hui-Ling Peng
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Preventing oxide precipitation in selective wet etching of Si3N4 for 3D-NAND structure fabrication: The role of bubbles Microelectron. Eng. (IF 2.3) Pub Date : 2023-10-12 Hao Zhang, Haiqiang Yang, Fang Yuan, Bo Liu, Qiang Yang
Selective wet etching of Si3N4 is a critical process in the fabrication of 3D-NAND structures; however, it faces a oxide precipitation problem that significantly deteriorates the remaining structure morphology. A recent study by Kim et al.(Kim et al., 2022 [1]) showed that generating CO2 bubbles during the wet etching process efficiently solves the precipitation problem in the fabrication of a 128
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Facile and direct 3D printing of smart glove for gesture monitoring Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-28 Zaiwei Zhou, Wanli Zhang, Yue Zhang, Xiangyu Yin, Xin-Yuan Chen, Bingwei He
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High consistency VO2 memristor for artificial auditory neuron Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-27 Yan Wang, Chaohui Su, Yiming Zheng, Kexin Zhou, Zhenli Wen, Yujun Fu, Qi Wang, Deyan He
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SAR assessment of miniaturized wideband MIMO antenna structure for millimeter wave 5G smartphones Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-20 Rania Hamdy Elabd, Ahmed Jamal Abdullah Al-Gburi
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Design of memristor hyperchaotic circuit with burst oscillation and infinite attractor coexistence and its application Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-23 Jie Zhang, Yan Guo, Jinhao Guo
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Study on three-dimensional dielectrophoresis microfluidic chip for separation and enrichment of circulating tumor cells Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-22 Linxia Jiang, Feng Liang, Mingxuan Huo, Meiqi Ju, Jiajun Xu, Shaowei Ju, Lihong Jin, Bingjun Shen
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Evaluation of etching performance of single etching gases for high-κ films Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-09 Anhan Liu, Zhan Hou, Fan Wu, Xiaowei Zhang, Shingo Nakamura, Tomomi Irita, Akinari Sugiyama, Takashi Nishikawa, He Tian
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Strategies for avoiding delamination in system-in-packaging devices Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-04 Andrei Alaferdov, Ricardo T. Yoshioka, Carolina C.P. Nunes, Matheus Dias Sousa, Valdeci Carvalho, Igor Fernandes Namba, Claudemir Coral
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High aspect-ratio sub-500 nm UV-PDMS bilayer stamps by means of hybrid thermal-ultraviolet curing for resonant nanopillars fabrication through soft UV-NIL Microelectron. Eng. (IF 2.3) Pub Date : 2023-09-04 Luca Tramarin, Rafael Casquel, Iñigo Mañueco, Miguel Holgado
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Reliability challenges in CMOS technology: A manufacturing process perspective Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-24 Qiao Teng, Yongkang Hu, Ran Cheng, Yongyu Wu, Guodong Zhou, Dawei Gao
With the development of automotive electronics, the characteristics of device reliability have received widespread attention. The improvement of device reliability primarily depends on the manufacturing process's quality. This work reviews the inherent relationship between manufacturing processes and reliability with a detailed introduction to the components and failure indices of wafer-level reliability
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Nano-capsuled thermal interface materials filler using defective multilayered graphene-coated silver nanoparticles Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-15 Sungjun Choi, Dongho Shin, Sarah EunKyung Kim, Changsun Yun, Yik Yee Tan, Caroline Sunyong Lee
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A simple figure of merit to identify the first layer to degrade and fail in dual layer SiOx/HfO2 gate dielectric stacks Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-14 Andrea Padovani, Paolo La Torraca
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Simulation-based investigation of junction-controlled narrow-band Si photodetector with vertical structure Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-19 Guang-bin Zhang, Yu-jian Liu, Li Wang
Junction-controlled narrow-band Schottky photodetectors are very attractive in the optoelectronic systems that operate in a small spectral range, due to its high noise immunity, simple structure, and self-powered work mode. In this work, simulation was carried out to study the working mechanism of the junction-controlled narrow-band photodetector based on a vertical silicon Schottky structure. It is
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8 A, 200 V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-19 Rijo Baby, Manish Mandal, Shamibrota K. Roy, Abheek Bardhan, Rangarajan Muralidharan, Kaushik Basu, Srinivasan Raghavan, Digbijoy N. Nath
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Thick film MEMS process using reverse lift-off Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-12 S. Takase, K. Yamada, Y. Nakagawa, C. Oka, J. Sakurai, S. Hata
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Few layer chemical vapor deposited two dimensional WS2 for low voltage resistive switching application Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-16 Awais Khalid, Pervaiz Ahmad, Ahmad M. Saeedi, Iram Liaqat, N.S. Abd EL-Gawaad, Sahar Ahmed Ldris, Abdulaziz M. Alanazi, Amal H. Alsehli, Marwah M. Alsowayigh, Suliman A. Alderhami
Optimizing the fabrication method gives rise to control over the deposition of WS2 sheets in a CVD chamber. The deposition was executed on Pt-coated silicon substrate so that electrical behavior of the WS2 domains could be observed. Utilizing two types of electrode material helped in understanding the role of metal diffusion mediated switching failure. The Au/WS2/Pt/Ti/SiO2/Si device exhibited resistive
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A novel programming circuit for memristors Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-02 Shengtao Tu, Jinyu Li, Yanyun Ren, Qin Jiang, Shisheng Xiong
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Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates Microelectron. Eng. (IF 2.3) Pub Date : 2023-08-01 Nikolay Petkov, Margarita Georgieva, Sinan Bugu, Ray Duffy, Brendan McCarthy, Maksym Myronov, Ann-Marie Kelleher, Graeme Maxwell, Giorgos Fagas
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Fabrication of silicon nitride membrane nanoelectromechanical resonator Microelectron. Eng. (IF 2.3) Pub Date : 2023-07-22 Hao Xu, Srisaran Venkatachalam, Christophe Boyaval, Pascal Tilmant, Francois Vaurette, Yves Deblock, Didier Theron, Xin Zhou
In this work, we present details of the nanofabrication process for achieving a silicon nitride nanoelectromechanical resonator, consisting of a membrane covered with a thin aluminium layer capacitively coupled to a suspended top gate. Critical nanofabrication steps have been discussed, including the XeF2 selective etching process to release the silicon nitride membrane from the substrate and the reflow
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Low temperature, highly stable ZnO thin-film transistors Microelectron. Eng. (IF 2.3) Pub Date : 2023-07-11
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Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture Microelectron. Eng. (IF 2.3) Pub Date : 2023-07-15 Lorenzo Benatti, Tommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi