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Biosynthesized AgNP modified Glassy Carbon Electrode as a bacteria sensor based on amperometry and impedance-based detection IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-11 Rhea Patel, Naresh Mandal, Bidhan Pramanick
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Variability-Aware Memristive Crossbars with ImageSplit Neural Architecture IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-08 Aswani Radhakrishnan, Anitha Gopi, Chithra Reghuvaran, Alex James
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Numerical Analysis of Annular Photonic Crystal based Reconfigurable and Multifunctional Nanoring Symmetrical Resonator for Optical Networks IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Pradeep Doss M, R. K. Jeyachitra
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Simulating Charged Defects in Silicon Dangling Bond Logic Systems to Evaluate Logic Robustness IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Samuel S. H. Ng, Jeremiah Croshaw, Marcel Walter, Robert Wille, Robert Wolkow, Konrad Walus
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From Multipliers to Integrators: a Survey of Stochastic Computing Primitives IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Shanshan Liu, Josep L. Rosselló, Siting Liu, Xiaochen Tang, Joan Font-Rosselló, Christian F. Frasser, Weikang Qian, Jie Han, Pedro Reviriego, Fabrizio Lombardi
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Enhanced Magnetic Field Sensing with MAGNC-FinFET: A Current Mode Hall Effect Approach IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-03-05 Ravindra Kumar Maurya, Radhe Gobinda Debnath, Rajesh Saha, Brinda Bhowmick
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Reverse Charge Injection Dual-Gate Synaptic Transistors for Effective Weight Update IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-29 Donghyun Ryu, Junsu Yu, Woo Young Choi
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Numerical Investigation of Nanoresonator Based Ultra Narrow-Band Photonic Filters IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-27 R. Rajasekar
A novel photonic crystal nanoresonator-based optical bandpass filter is designed with ultra narrow bandwidth, high quality factor, low optical loss and very small compact size. The proposed S-Shaped nanostructure is playing a very significant role on narrow wavelength filtering and effectively localize the incident light signal which leads to the high-quality factor is obtained with 100% transmission
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Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-27 Hao Ding, Lan Chen, Wentao Huang
Carbon nanotube field-effect transistors (CNFETs) possess high current density and carrier mobility, enabling high intrinsic gains below the 20-nm technology node. Thus, they demonstrate superior performance compared to traditional silicon analog integrated circuits (ICs). Here, the relevant parameters of a CNFET in analog IC designs were analyzed and simulated, elucidating the influence of physical
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Efficient Parallel Stochastic Computing Multiply-Accumulate (MAC) Technique Using Pseudo-Sobol Bit-Streams IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-22 Aokun Hu, Wenjie Li, Dongxu Lyu, Guanghui He
Stochastic computing (SC) has emerged as a promising technique for reducing hardware costs in various applications, particularly in multiply-accumulate (MAC) intensive tasks such as neural networks. However, conventional SC still faces challenges in terms of achieving high accuracy and throughput. To enhance the precision, Sobol bit-stream has been widely adopted in SC. On the other hand, the throughput
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ASIC Design of Nanoscale Artificial Neural Networks for Inference/Training by Floating-Point Arithmetic IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-20 Farzad Niknia, Ziheng Wang, Shanshan Liu, Pedro Reviriego, Ahmed Louri, Fabrizio Lombardi
Inference and on-chip training of Artificial Neural Networks (ANNs) are challenging computational processes for large datasets; hardware implementations are needed to accelerate this computation, while meeting metrics such as operating frequency, power dissipation and accuracy. In this article, a high-performance ASIC-based design is proposed to implement both forward and backward propagations of multi-layer
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On the γ-Radiation Dosimetry Using a Layered Metamaterial Structure Comprising FTO and Blue Glass IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-09 E. M. Sheta, Azrul Azlan Hamzah, Umi Zulaikha Mohd Azmi, Ishak Mansor, Pankaj Kumar Choudhury
A layered metamaterial comprising periodic blue glass and FTO mediums was investigated for gamma (γ) radiation dosimetry. The device acts on the principle of absorption of the incidence radiation with sharp resonance absorption peaks which undergo shifts in the presence of γ-radiation. The more the radiation dose is, the more shift happens in the resonance absorption spectrum – the feature that can
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Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-02-02 Bowen Wang, Fernando García-Redondo, Marie Garcia Bardon, Hyungrock Oh, Mohit Gupta, Woojin Kim, Diego Favaro, Yukai Chen, Wim Dehaene
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CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM) IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-30 Manoj Kumar, Ming-Hung Wu, Tuo-Hung Hou, Manan Suri
We propose a Non-Volatile Ternary Content Addressable Memory (nvTCAM) by utilizing two Resistive Random-Access Memory (RRAM) cells integrated with individual selector transistors (i.e., 2-Transistor, 2-RRAM). A 2T2R cell configured either in complementary resistive switching mode (i.e., if one 1T1R cell is in low resistance state then the other cell will be in high resistance state or vice-versa) or
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Experimental Evaluation of Tailored Double Heterojunction Non-Toxic Metal Oxide-Based Nanostructured Sensor for Multi-Sensing Application IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-29 Binowesley R, Kirubaveni Savarimuthu, Kiruthika Ramany, Govindaraj Rajamanickam
A systematized experimental interpretation of BaTiO 3 (B), ZnO (Z), and BaTiO 3 /ZnO (B/Z) based sensors, fabricated via a facile solution-based method is reported. The structural properties analysis of all the sensors fabricated reveals the formation of characteristic respective dominant peaks (hexagonal, tetragonal, and heterostructure (hexagonal and tetragonal) for B, Z, and B/Z respectively). The
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Low-Cost and Highly-Efficient Bit-Stream Generator for Stochastic Computing Division IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-26 Mehran Shoushtari Moghadam, Sercan Aygun, Sina Asadi, M. Hassan Najafi
Stochastic computing (SC) division circuits have gained importance in recent years compared to other arithmetic circuits due to their low complexity as a result of an accuracy tradeoff. Designing a division circuit is already complex in conventional binary-based hardware systems. Developing an accurate and efficient SC division circuit is an open research problem. Prior work proposed different SC division
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A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-26 Xingyu Zhai, Yun Li, Wen-Yan Yin, Shuo Zhang, Wenxuan Zang, Yanbin Yang, Hao Xie, Wenchao Chen
Resistive random access memory (RRAM) with edge-contacted graphene electrode has much lower power consumption and excellent scalability as in other's previous studies, which shows great potential for in-memory computing, neuromorphic integrated circuits, Big Data analytics, etc. A physics-based SPICE compact model of RRAM with graphene electrode is proposed to capture the electro-thermal characteristics
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DFT Calculations for Temperature Stable Quantum Capacitance of VS2 Based Electrodes for Supercapacitors IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-24 Ashish Kumar Yadav, Shreevathsa N S, Rohit Singh, Partha Pratim Das, Vivek Garg, Sushil Kumar Pandey
Using density functional theory calculations, we demonstrate the quantum capacitance of the VS 2 electrode which can be improved by doping with non-metallic elements such as nitrogen (N), phosphorus (P), and arsenic (As) atoms. The radius, charge, and morphology of these non-metallic elements help to improve the performance of VS 2 material as electrodes of supercapacitors. The As-doped VS 2 monolayer
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NeuroSOFM-Classifier: Nanoscale FeFETs Based Low Power Neuromorphic Architecture for Classification Using Continuous Real-Time Unsupervised Clustering IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-23 Siddharth Barve, Rashmi Jha
Supervised machine learning techniques are becoming subject of significant interest in data analysis. However, the high memory bandwidth requirement of current implementations, scarcity of labeled data, and dynamic environments in many applications prevent implementation of supervised machine learning techniques. In this work, we propose a neuromorphic architecture implementing the self-organizing
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Ab-Initio Investigations into Frenkel Defects in Hexagonal Boron Nitride for Quantum Optoelectronic Applications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-16 Sunny Kumar, Vikash Mishra, Kolla Lakshmi Ganapathi, Muralidhar Miryala, M. S. Ramachandra Rao, Tejendra Dixit
The van Der Waals material, hexagonal boron nitride (h-BN) is being studied extensively for electronics, sensing, photonics, and quantum technology. Identifying distinct point-defects that may be employed to create qubits and single photon emitters with specific properties has recently boosted defect engineering research in h-BN. The assignment of defects to specific characteristics of h-BN is a subject
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2023 Index IEEE Transactions on Nanotechnology Vol. 22 IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-15
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Broadband Graphene/TiO2 Optical Modulator Based on Hybrid Plasmonic Waveguide for Ultrafast Switching and Low-Voltage State IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-15 Wisut Supasai, Suksan Suwanarat, Mongkol Wannaprapa, Papichaya Chaisakul, Apirat Siritaratiwat, Chavis Srichan, Nuttachai Jutong, Sorawit Narkglom, Chayada Surawanitkun
This work presents a novel contribution to graphene/TiO 2 electro-optical modulators based on silicon-on-silica waveguide with a hybrid plasmonic waveguide to achieve ultrafast switching and low-voltage states. Waveguide structure consists of a rectangular silicon core covered by a high relative permittivity TiO 2 dielectric layer with two layers of graphene, air-clad, and silica lower cladding. Effective
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Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2024-01-12 Jaafar Abdulkareem Mustafa Alsmael, Serhat Orkun Tan
In this work, Al/p-Si structures with (ZnFe 2 O 4 − PVA) interfacial film, which is grown by the electrospinning-method, have been analyzed by using impedance measurements in the wide frequency interval (2 kHz–2 MHz) at both side of polarization (±4 V). Some fundamental important electrical parameters such as intercept-voltage (V o ), the concentration of acceptor-atoms (N A ), depletion layer width
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MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-29 Sahil Garg, Bhavuk Sharma, Gaurav Mani Khanal, Sanjeev Kumar, Neena Gupta, S. R. Kasjoo, Aimin Song, Arun K. Singh
This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple
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Impact of Dynamic Tip-Surface Interactions on Microdroplet Formation via Fluid Force Microscopy IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-26 Zhuobo Yang, Xianmin Zhang, Hai Li, Benliang Zhu, Ke Feng, Rixin Wang
The emergence of FluidFM technology has presented a novel opportunity for selective aspiration and distribution of liquids at the sub-micron scale. However, precise control over droplet generation volume remains a challenging issue. This study investigates the impact of dynamic parameters between the tip and surface on droplet formation. Initially, we establish a finite element model to simulate the
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Adaptive Controller With Anti-Windup Compensator for Piezoelectric Micro Actuating Systems IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Ying Feng, Mingwei Liang, Ying Li
In this study, the control approach for the piezoelectric actuating system under broad ranges frequency is designed. Addressing the frequency dependent property (rate-dependent) hysteresis of the input signal in piezoelectric actuators, a phenomenological model, a rate-dependent Prandtl-Ishlinskii (RDPI) model, has been utilized to predict the output actuating ability of piezoelectric actuators. Considering
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Memristive Circuit Design of Associative Memory With Generalization and Differentiation IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Juntao Han, Xin Cheng, Guangjun Xie, Junwei Sun, Gang Liu, Zhang Zhang
Reinforcement, extinction, generalization and differentiation are all basic principles of Pavlov associative memory. Most memristive neural networks that simulate associative memory only consider reinforcement and extinction, while ignoring differentiation and generalization. In this paper, a memristive circuit of associative memory with generalization and differentiation is proposed to solve the above
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Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Amir Khodabakhsh, Amir Amini, Mohammad Fallahnejad
The evolution trend of wireless communication systems tends to ultra-high data rate, ultra-low latency, and high bandwidth systems. It is foreseen that 6G wireless communication systems will be developed in the range of 100–300 GHz (upper mmWave band) and 300–3000 GHz (terahertz band). In such frequencies, the performance of junctionless field effective transistors is limited due to the reduction of
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Design and Evaluation of Graphene-Silicon Heterojunction LEDs for Breast Cancer Detection IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-25 Chiranjib Bhowmick, Sharique Ali Asghar, Pranab Kumar Dutta, Manjunatha Mahadevappa
Breast Cancer remains a devastating affliction for humanity, particularly due to its low survival rates, especially when detected at advanced stages and metastasis has occurred. Early diagnosis is crucial to increase survival rates, but current diagnostic techniques such as mammography and MRI are costly and require an experienced radiologist to interpret results. Transillumination is a non-invasive
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Highly Reliable, Stable, and Store Energy Efficient 8T/9T-2D-2MTJ NVSRAMs IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-21 Sandeep Tripathi, Sudhanshu Choudhary, Prasanna Kumar Misra
Non-Volatile SRAMs exhibit zero static power loss which is eminent for future on-chip memories. Thus, in this brief, two simple and scalable designs of NVSRAM (8T&9T-2D-2MTJ) having key properties (high speed, low dynamic power, stability and reliability) have been investigated. To make the circuit scalable, the perpendicular magneto anisotropy (PMA) based magnetic tunnel junction (MTJ) (works on the
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A STT-Assisted SOT MRAM-Based In-Memory Booth Multiplier for Neural Network Applications IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-18 Jiayao Wu, Yijiao Wang, Pengxu Wang, Yiming Wang, Weisheng Zhao
Computing-in-memory (CIM) is a promising candidate for highly energy-efficient neural networks, alleviating the well-known bottleneck in Von Neumann architecture. MRAM has garnered significant attention in the CIM field, providing advantages in terms of non-volatility, high speed, and endurance. However, most existing MRAM-CIM primarily support low-precision operations, which poses a challenge in fulfilling
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Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-18 Harrison Jin, Hanqing Zhu, Keren Zhu, Thomas Leonard, Jaesuk Kwon, Mahshid Alamdar, Kwangseok Kim, Jungsik Park, Naoki Hase, David Z. Pan, Jean Anne C. Incorvia
With the rise in in-memory computing architectures to reduce the compute-memory bottleneck, a new bottleneck is present between analog and digital conversion. Analog content-addressable memories (ACAM) are being recently studied for in-memory computing to efficiently convert between analog and digital signals. Magnetic memory elements such as magnetic tunnel junctions (MTJs) could be useful for ACAM
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High Speed Binary Neural Network Hardware Accelerator Relied on Optical NEMS IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-15 Yashar Gholami, Fahimeh Marvi, Romina Ghorbanloo, Mohammad Reza Eslami, Kian Jafari
In this article, an electrostatically-actuated NEMS XOR gate is proposed based on photonic crystals for hardware implementation of binary neural networks. The device includes a 2D photonic crystal which is set on a movable electrode to implement the XOR logic using the transmission of specific wavelengths to the output. This design represents the importance of the proposed structure in which the logic
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Modeling and Simulation of RRAM With Carbon Nanotube Electrode IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-12 Da-Wei Wang, Jia-He Zhu, Yi-Fan Liu, Gaofeng Wang, Wen-Sheng Zhao
The resistive random access memory with metallic carbon nanotube (CNT-RRAM) electrode possesses low power consumption and low junction temperature. In this work, both physical and compact models describing the operations of CNT-RRAM at the microscopic level are presented. In the physics-based model, the migration of oxygen vacancies is described by fully coupled oxygen transport, current continuity
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Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-12-04 Shuxian Lyu, Pengfei Jiang, Zhaomeng Gao, Yang Yang, Yuanxiang Chen, Boping Wang, Meiwen Chen, Yuan Wang, Yuting Chen, Yan Wang
Hafnia ferroelectric-based Fe-FET devices have attracted increasing interest due to their CMOS compatibility, high scalability and low power consumption. Ge-based Fe-FETs could help overcome the shortcomings of Si-based Fe-FETs caused by the interface layer. In this work, the effect of the deposition temperature on the TiN/Hf 0.5 Zr 0.5 O 2 /Ge device performance is systematically studied, which is
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High-Performance STT-MRAM-Based Computing-in-Memory Scheme Utilizing Data Read Feature IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-27 Bi Wu, Kai Liu, Tianyang Yu, Haonan Zhu, Ke Chen, Chenggang Yan, Erya Deng, Weiqiang Liu
With the development of Artificial Intelligence (AI) and Binary neural networks (BNN), the computing efficiency of the computing system is expected to be much better, however, enormous amounts of data processing have caused an intolerable ‘memory wall’ and ‘power wall’ challenge for traditional Von Neumann architectures. Therefore, more advanced Computing-in-memory (CiM) architectures are proposed
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Effect of Adsorption Mechanism on Conduction in Single-Molecule Pyrrole-Based Sensor for AFB1 IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-24 Fabrizio Mo, Yuri Ardesi, Chiara Elfi Spano, Massimo Ruo Roch, Gianluca Piccinini, Mariagrazia Graziano
We investigate through ab-initio simulations the gold-8PyrroleDiThiol-gold (Au-8PyDT) molecular quantum dot as an amperometric single-molecule sensor for the aflatoxin B1 (AFB1) detection. We study the chemical-physical interaction of AFB1 with the Au-8PyDT, and we analyze the transport characteristics of the four most probable adsorption configurations. We also investigate the link between transport
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Performance Evaluation of a Fractal Plasmonic Bowtie Nano-Antenna: Optical and Far-Field Properties IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-15 Somayeh Komeylian, Christopher Paolini
In the nano-antenna framework, in this work, we have proposed a fractal plasmonic bowtie nano-antenna (FPBNA) with three wings to maximize the coupling between higher and lower order modes. Hollow cavities of the bowtie nano-antenna support hybridization modes, both anti-bonding and bonding modes. In other words, the blue-shift in the hybridization modes results from an increase in the Sierpiński fractal
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Dynamical Neural Network Based on Spin Transfer Nano-Oscillators IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-10 Davi R. Rodrigues, Eleonora Raimondo, Vito Puliafito, Rayan Moukhadder, Bruno Azzerboni, Abbass Hamadeh, Philipp Pirro, Mario Carpentieri, Giovanni Finocchio
Spintronic technology promises to significantly increase the efficiency and scalability of neural networks by employing optimized task-oriented device components that exhibit intrinsic nonlinearity, temporal nonlocality, scalability, and electrical tunability. In particular, the functional response of spin-transfer torque oscillators can be designed to naturally emulate the building blocks of neural
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Amplification and Frequency Conversion of Spin Waves Using Acoustic Waves IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-09 Morteza Mohseni, Alexandre Abbass Hamadeh, Moritz Geilen, Philipp Pirro
We numerically study the acoustic parametric amplification of spin waves using surface acoustic waves (SAW) in a magnetic thin film. First, we illustrate how the process of parametric spin-wave generation using short-waved SAWs with a fixed frequency allows to tune frequencies of the generated spin waves by the applied magnetic field. We further present the amplification of microwave driven spin waves
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2D Material-Based MVS Model and Circuit Performance Analysis for GeH Field-Effect Transistors IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-06 Yiju Zhao, Youngki Yoon, Lan Wei
This paper presents an improved multi-level simulation framework for 2D material-based nanoelectronics, which expands from device simulation, physics-based compact modeling, and circuit benchmarking, using the germanane (GeH) metal-oxide-semiconductor field-effect transistors (MOSFETs) as an example. The device simulation employs the non-equilibrium Green's function method to obtain the characteristics
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Monte Carlo Modeling of Growth Delay in Atomic Layer Deposited WS2 on SiO2 Substrate Based on Kinetic Extrapolation of Reaction Entropy and Enthalpy IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-11-02 Komal Mishra, Vivek Kumar, Arnab Datta
Atomic layer deposition (ALD) of tungsten-disulfide (WS 2 ) on silicon-dioxide (SiO 2 ) substrate had been modelled using a kinetic Monte Carlo (KMC) method which considered kinetic extrapolation of reaction entropy and enthalpy between the two proposed reaction limits that define possible initial and final phases of the WS 2 ALD reaction, and stochastic adsorption or desorption of molecules was calculated
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Effect of High–Temperature Annealing on Au Thin Film/TiO2 Nanowires for Enhanced Photodetection IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-31 Rajib Kumar Nanda, Amitabha Nath, Laishram Robindro Singh, Mitra Barun Sarkar
Glancing angle deposition (GLAD) technique has been carried out to deposit the titanium dioxide (TiO 2 ) nanowires (NW) on the silicon (Si) substrate. The TiO 2 NW is coated with a gold (Au) thin film (TF) and annealed at a very high temperature. The morphological characteristics have been reported using field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy
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Wave Digital Emulation of an Enhanced Compact Model for RRAM Devices With Multilevel Capability IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-31 Bakr Al Beattie, Emilio Pérez-Bosch Quesada, Max Uhlmann, Eduardo Pérez, Gerhard Kahmen, Enver Solan, Karlheinz Ochs
The reliable and compact modeling of RRAM devices is crucial for supporting the development of novel technologies including them. This includes a wide range of applications, such as in-memory computing or memristive logic. A major advantage of the considered HfO $_{2}$ -based RRAM devices is their CMOS-compatibility, which allows them to already be utilized in present applications. However, one problem
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Impact of Nanosheet Thickness on Performance and Reliability of Polycrystalline-Silicon Thin-Film Transistors With Double-Gate Operation IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-24 William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Jing-Qiang Guo, Cheng-Jun Wu, Po-Ying Wu, Jia-Yuan Hung
In this work, the polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with double gates and nanosheet (NSH) channel structures were fabricated to investigate the impact of NSH channel thickness (t Si ) ranging from 15 nm to 2 nm on device performance and reliability. Thinning t Si from 15 nm to 10 nm resulted in improved control of channel potential by the gate voltage, leading to a decreased
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Stability of ZnO and Curcumin Decorated Graphene Oxide Nanocomposite in Acidic and Alkaline pH for Efficient Removal of Toxic Cd (II) Ions From Water IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-23 Nabanita Chakraborty, Swati Ghosh Acharyya, Roy Anindya
A nanocomposite of graphene oxide, zinc oxide, and curcumin (GO-ZnO-cur) was synthesized for the adsorption of toxic Cd (II) ions from water. The nanocomposites with different concentrations were characterized by FESEM, X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), and contact angle measurement. GO-ZnO-cur nanocomposites had a specific surface area of
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Ppb-Level Ammonia Sensors Based on SnS2/rGO Nanohybrid Operating at Room Temperature IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-23 Zhijia Liao, Zhenyu Yuan, Yao Yu, Renze Zhang, Hongmin Zhu, Hongliang Gao, Fanli Meng
The importance of testing for ammonia is underlined by the fact that its adverse effects on the environment, ecosystems and human health are widely acknowledged. However, detecting low concentrations of ammonia at lower temperatures poses a significant challenge. In this study, a two-dimensional tin sulfide (SnS 2 ) combined with graphene was synthesized using a straightforward one-step hydrothermal
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A Survey of Majority Logic Designs in Emerging Nanotechnologies for Computing IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-20 Tingting Zhang, Honglan Jiang, Weiqiang Liu, Fabrizio Lombardi, Leibo Liu, Seok-Bum Ko, Jie Han
As Moore's law is coming to an end, research on technologies alternative to the complementary metal-oxide semiconductor (CMOS) has been extensively pursued over the last few decades. Many emerging nanotechnologies assemble circuits based on majority logic. It is generally known that majority logic is more expressive and hardware efficient than Boolean logic, however majority logic presents unique challenges
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Co-Integrated Neuromorphic Devices for Bio-Inspired Compliance Control IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-13 Hery Shin, Ji-Man Yu, Joon-Kyu Han, Yang-Kyu Choi
Mutual interactions between humans and devices are being widely adopted, including wearable electromechanical devices known as robotic exoskeletons. Among various modules used to control the human-robot interactions, compliance control (CC) is needed to ensure human safety and avoid abnormal operations. Here we propose a novel CC system with co-integrated neuromorphic devices composed of a pre-synapse
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A Novel Dopingless Ternary FET With the Metal Source for Ternary Inverter Implementation IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-10 Hao Ye, Pengjun Wang, Yijian Shi, Bo Chen, Gang Li, Xiangyu Li, Xiaojing Zha, Jianping Hu
This article proposes a novel dopingless ternary FET (DLT-FET) composed of the longitudinal metal-source/InAs-channel/InAs-drain structure for compact implementation of the ternary inverter. A single DLT-FET mixes two types of carrier transport mechanisms: 1) according to the concept of charge plasma, the Band-to-Band tunneling (BTBT) can occur at channel/drain interface by metal work function engineering;
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A Reprogrammable Graphene Nanoribbon-Based Logic Gate IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-10 Konstantinos Rallis, Iosif-Angelos Fyrigos, Panagiotis Dimitrakis, Giorgos Dimitrakopoulos, Ioannis Karafyllidis, Antonio Rubio, Georgios Ch. Sirakoulis
In this article, taking into consideration the exceptional technological properties of a unique 2-D material, namely Graphene, we are envisioning its usage as the structure material of a non-back-gated re-programmable switching device. The proposed topology is analyzed in depth, not only by verifying its operation and re-programmability as a 2-input XOR , 3-input XOR and 3-input Majority gate, but
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A Generalization and Differentiation Circuit Implementation Based on Neural Mechanisms IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-09 Zhixia Ding, Zhirui Chen, Ting Su, Sai Li, Le Yang
Pavlov conditioning theory can explain part of biological behavior accurately, and has a profound influence on the development of behavioral psychology. Reinforcement, extinction, generalization and differentiation are the four basic principles of conditional reflex. Among them, reinforcement and extinction respectively correspond to learning and forgetting in Pavlov associative memory, and have been
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L-Shaped Double Gate Bipolar Impact Ionization MOSFET Based Energy Efficient Leaky Integrate and Fire Neuron for Spiking Neural Network IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-09 Saheli Sarkhel, Tripty Kumari, Priyanka Saha
In this article, an L-shaped double gate bipolar impact ionization MOSFET (L-DG BIMOS) is proposed and demonstrated as an ultra-low energy artificial leaky integrate and fire (LIF) neuron for spiking neural network. The L-shaped double gate structure offers a higher rate of impact ionization (II) essential for triggering LIF action and hence can efficiently be applicable to mimic a biological neuron
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A 5.2 GHz Inductorless CNTFET-Based Amplifier Design Feasible for On-Chip Implementation IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-09 Leslie M. Valdez-Sandoval, Armando Cid-Delgado, Aníbal Pacheco-Sánchez, Mauro A. Enciso Aguilar, Manojkumar Annamalai, Michael Schröter, Eloy Ramírez-García
The design of single- and double-stage carbon nanotube field-effect transistor (CNTFET) based power gain amplifiers using an experimentally-calibrated compact model of an advanced CNTFET technology is presented. Operating at a frequency of 5.2 GHz, the designed single- and double-stage amplifiers achieve competitive gain and linear performance whereas maintining low-power consumption in comparison
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Hybrid Discontinuous Galerkin Approach for the Solution of Quantum Liouville-Type Equations IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-06 V. Ganiu, M. Jaeger, D. Schulz
For the evaluation of charge carrier transport in quantum devices, quantum Liouville-type equations (QLTE) have proven to be powerful as a starting point for the numerical analysis of transport characteristics. Due to the complexity of quantum devices, the computational time is to be further reduced using high-performance computing methods. Therefore, a hybrid discontinuous Galerkin (DG) approach is
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A General-Purpose STT-MTJ Device Model Based on the Fokker-Planck Equation IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-06 Haoyan Liu, Takashi Ohsawa
A thermally agitated device model of spin-transfer torque magnetic tunnel junction (STT-MTJ) based on the Fokker-Planck equation is proposed which is implemented into HSPICE by using Verilog-A. We compared different techniques of finite difference method (FDM) and analyzed the impact of the solvers on computational efficiency and accuracy. A framework is proposed which traces dynamics of a particular
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A Deep Dive Into the Design Space of a Dynamically Reconfigurable Cryogenic Spiking Neuron IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-10-05 Md Mazharul Islam, Shamiul Alam, Catherine D Schuman, Md Shafayat Hossain, Ahmedullah Aziz
Spiking neural network offers the most bio-realistic approach to mimic the parallelism and compactness of the human brain. A spiking neuron is the central component of an SNN which generates information-encoded spikes. We present a comprehensive design space analysis of the superconducting memristor (SM)-based electrically reconfigurable cryogenic neuron. A superconducting nanowire (SNW) connected
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Realization of Sub-10nm Fluorinated Silicene Based Spin Diode and Spin Diode Logic IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-09-25 Muzaffar A Najar, Khurshed A. Shah, Shabir A. Parah
Most of today's computing technology employs Si-based CMOS-transistors and the associated CMOS logic-family. In contrast, alternate devices (like spin valve, spin diode, etc.) and the other logic family (like diode logic) present a better alternative with enhanced performance advantages such as high speed, smaller size, and enhanced power efficiency. Moreover, 2D materials due to their ultimate thinness
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Spectral Analysis of Subterahertz Oscillations Based on an Antiferromagnet/Non–Magnetic Metal Heterostructure IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-09-13 Anastasia Mitrofanova, Kirill Vanin, Dmitry Volkov, Ansar Safin, Oleg Kravchenko, Heung-Gyoon Ryu, Sergey Nikitov
We present a model of a sub-THz frequency spectrum analyzer based on the antiferromagnet/non–magnetic metal heterostructure. The considered structure operates in the active self–oscillation regime with the high Q–factor (closed to $10^{6}$ ) and is phase–locked to the analyzed signal, while the frequency of the oscillator is linearly tuned by the spin–polarized current flowing through the non–magnetic
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Thermal Treatments on a UDMA-TEGDMA Nanocomposite Doped With Gold Nanorods Investigated by In-situ Raman-Spectroscopy IEEE Trans. Nanotechnol. (IF 2.4) Pub Date : 2023-09-13 Attila Bonyár, Alexandra Borók, Melinda Szalóki, Miklós Veres, István Rigó
The impact of heating and cooling cycles on a copolymer mixture of urethane dimethacrylate (UDMA) and triethylene glycol dimethacrylate (TEGDMA), with and without gold nanorod doping was studied by using in-situ Raman spectroscopy. The copolymer was made in a 3:1 ratio and 0.1236 m/m% concentration of 25 nm × 85 nm gold nanorods was added. Heating and cooling between 30 °C and 140 °C was applied and