This paper investigates a method to suppress the ambipolar current Iamb effectively, enhance the device performance with higher on current Ion, lower off current Ioff, lower inverse subthreshold slope SS and simultaneously improve the RF performance. Starting with a conventional double-gate TFET structure, the device optimization reported in this work has led to the gradual improvement in device performance

Tin sulfide (SnS) thin films were obtained by chemical bath deposition (CBD) using different concentrations of trisodium citrate (TSC) as a complexing agent. Nickel doping tin sulfide was carried out. The structural, electrical, chemical composition and optical properties of thin films were analyzed. The lowest resistivity (ρ = 0.42 × 105Ω cm) is observed for Ni:SnS (6 at. %) The energy band gap values

In this work, with the help of extensive technology computer-aided design simulations, we report a comprehensive study of MOSFET based circuit design using ultra-thin body III-V on-insulator (OI) CMOS transistors. We demonstrate the circuit performance of III-V CMOS by combining InAs-OI n-channel and GaAs-OI junction-less p-channel transistors. The performance metrics of different circuits designed

In this paper, the electrical characteristics of a low power steep-slope vertical tunnel field effect transistor (VTFET) is introduced with dual lateral channel in the source sidewall, which can considerably improve the device performance in comparison with the planar tunnel field effect transistor (TFET). The results demonstrate that unlike the conventional TFET with limited tunneling junction at

An annular dielectric resonator (DR) antenna (DRA) is implemented for THz applications. A silicon made DR is loaded with graphene disk for obtaining the tunability in the frequency response. The physical parameters of silicon annular DR can be set to obtain the resonance at any frequency in the lower THz band and can be tuned by changing the chemical potential of graphene nano-disk placed at the top

The effect of silicon carbide (SiC) particle strengthening on polymethyl methacrylate (PMMA)-toughened glass-epoxy composite has been studied. The primary aim of this research is two different tasks. Studying the effect of PMMA toughening on glass-epoxy composite and the effect of SiC particle addition are the two tasks. The PMMA and SiC particles are dispersed with epoxy resin at room temperature

In this seminal, we proposed a silicon and two-dimensional MXene (Ti3C2Tx) layer-based surface plasmon resonance (SPR) biosensor. Use of MXene layer facilitates the adsorption of biomolecules due to its larger surface area, stronger light matter interaction and higher binding energies. Silver, silicon thicknesses and the number of MXene layers of proposed SPR have been optimized for the best performance

This paper encapsulates the comparative study of physical, mechanical as well as tribological properties of Al2024 alloy and its composites Al2024-SiC and Al2024-TiB2 prepared by stir casting technique. Microstructural characterization were conducted using SEM (scanning electron microscope) with EDS (energy-dispersive X-ray spectroscopy). Experimental investigation of density, porosity, microhardness

A ceramic tile batch from Egyptian raw materials includes kaolin, quartz and feldspar in addition to few additive of bentonite is designed. The phase and chemical composition of the raw materials are investigated using XRD and XRF, respectively. Kaolin is composed of kaolinite and quartz, while kaolinitic sand is formed essentially of quartz with a lesser content of kaolin. Feldspars are represented

The present paper presents a graded channel NWFET using a doping-less technique with a core gate covering the channel and drain region. The graded channel and inner gate further suppresses the short channel effects and enhances the device performance capabilities. The performance metrics of the aforementioned device are calculated and compared with Charge Plasma and junctionless GAA-NWFET. The results

In this article, an accurate representation of threshold voltage for double metal double gate (DMDG) device structure has been initiated. It is the lowest gate-source electromotive force at which the device can kick off to conduct. This paper also deliberates a comparison between the high-k medium and SiO2 as an oxide substance along with that considers the gate stack concept. Use of a promising high-k

Photo-thermal-elastic interactions in an unbounded semiconductor media containing a cylindrical hole under a hyperbolic two-temperature are investigated using the coupled theory of thermo-elasticity and plasma waves. A new hyperbolic two-temperature model is used to study this problem. The internal surface of the cylindrical cavity is loaded by exponentially decaying pulse boundary heat flux and traction

In the present scenario, an endeavour is being utilized to associate the low frequency vibrations with electrical discharge machining process for enhancing the process mechanism. The process parameters of such process should be optimized to improve the quality measures. In the present study, Taguchi- Data Envelopment Analysis based Ranking(DEAR) based multi criteria decision making has been proposed

A Triple-Metal-Gate Vertical Tunnel FET (TMG-VTFET) on the doped silicon body is proposed in this paper. The metal gate is partitioned into three sections in the designed structure, and the work function of the middle section is kept higher as compare to the two other metal gate sections. The difference of the work function and the band gaps between the sources to channel and drain to channel interface

Micro ED milling is one of the widely applied processes to generate microfeatures on electrically conductive materials. However, the drawbacks associated with this process namely low MRR and high surface roughness limits its wide applicability. To enhance the rate of metal removal and surface finish an investigation is carried out by mixing SiC nano powders with dielectric media. Experimental trails

Glasses composed of multi-oxides (P2O5–B2O3–SiO2 together with Na2O and CaF2 and doped with either ZnO, CuO or Ag2O were prepared by melting- annealing technique controlled thermal heat–treatment process through two–step regime was carried for samples from the parent glasses to convert them to their corresponding glass–ceramic derivatives. Characterization of the bioactivity behavior of glass–ceramics

An extended source double-gate tunnel FET (ESDG-DMTFET) based biosensor is proposed for label free detection of biomolecules. The proposed device consists of two parallel gates with source extended into the channel so that channel overlaps the source on both sides. The cavities are carved in the gate-oxide towards drain side in order to maximize the impact of change in dielectric constant of biomolecules

In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field effect transistors (GAA-FET) is presented. The center potential is calculated for different values of channel length, channel height, doping concentration, and thickness of oxide layer using numerical simulations and analytical modeling. The results obtained using numerical simulations through TCAD are validated

A simplified analytical approach within the framework of Landauer-Buttiker formalism has been employed to model the drain current in a ballistic n-channel metal oxide semiconductor field effect transistor (MOSFET) and the expression for the device threshold voltage has been obtained. To achieve ballistic operation the said MOSFET has been modeled considering low temperature (77 K) and intrinsic silicon

In the present communication, the strain sensitive quantum well-structured photonic crystal has been utilized to realize a pressure sensor device. The quantum well-structure in one dimensional photonic crystal opens a channel into the photonic bandgap. The channel can be tuned with the refractive index of material, which depends on parameter, i.e. pressure. This tunability of the channel with the applied

In this paper, a novel sturcture of planar Silicon on Insulator Junctionless transistor is proposed with improved ION/IOFF ratio, Short Channel effects (SCEs) and most importantly, it is scaleable. A highly doped pocket (p-type) will form PN junction at its interface with n-type channel and hence referred to as pocket doped Silicon on Insulator Junctionless transistor (PD-SOI-JLT). A highly doped region

The main objective of this work is to use β-SiC (also called 3C-SiC) silicon carbide nanoparticles to formulate composite layer for wavelength conversion. Silicon Carbide nanopowders (npβ-SiC) were successfully synthesized by sol-gel method and followed by carbothermal reduction. Composite thin layers based on np-β-SiC incorporated into polyvinyl alcohol, (PVA) as matrix, where prepared. We have investigated

In this study, photonic crystal fiber in quasi pattern (Q-PCF) has been proposed at the terahertz (THz) regime. In Q-PCF, the core area is designed using the two elliptical air holes for the best performance of optical communications to obtain the ultra-low effective material loss (EML). In Q-PCF, perfectly matched layer (PML) and the finite element method (FEM) have been applied to simulate the desired

This current research dealing the effect of adding high stiffness carbon fibre along with E-glass fibre and addition of nano-silica particles as a toughening agent in epoxy resin. The main aim of this research is to improve the damping, storage modulus and fatigue behaviour of glass-epoxy composite by using carbon fibre and nano-silica particles. The intra-ply glass and carbon fibre were prepared using

The increasing demand for concrete for various infrastructure construction has led to significant production and usage of Portland cement which is the main binder used for concrete. The production of Portland cement poses a sustainability threat as its production emits a large amount of carbon dioxide into the environment coupled with the high consumption of natural resources. Therefore, the use of

Nowadays, casted multicrystalline silicon is the most important material in photovoltaic industry. In order to reduce the cost of silicon ingots, the recycle of silicon ingot tailings is explored. In this paper, the secondary utilization of silicon block tailings with a thickness of 25 mm, matched with process of diamond wire saw machine was studied. The comparative analysis on technical parameters

The incorporation of gaussian/multiple peak gaussian doping in planar 4H-SiC junctionless field effect transistor (JLFET) allows the conceptualization and realization of higher gate controllablity. With the aim of formulating and investigating the underlying device current gating mechanism of gaussian/multiple peak gaussian doping 4H-SiC JLFET with enhanced device performance, we have adopted the exhaustive

Electrochemical discharge machining (ECDM) has successfully demonstrated the micro-machining of pioneering engineering materials, regardless of their properties such as glass, quartz, silicon nitride ceramics, composites, etc. Yet numerous intrinsic challenges are there that should be addressed during the micro-hole drilling process with ECDM such as low material removal rate (MRR), high area of the

In this paper; we propose DMDG-GDOV TFET device structure for low leakage current. Considering the potential benefits of DMDG-TFET, emphasize with Gate Drain Overlap (GDOV) has been simulated with high-k (HfO2) and low-k (SiO2) which results in elevated ON current (ION) as well as less leakage current. The gate region and drain region overlap shows low leakage current as compared to non-overlap gate

The work is aimed at characterizing the properties of slag obtained from CaO-CaF2- TiO2-SiO2 based coatings developed for welding the offshore structures. Extreme vertices methodology was used to formulate coating compositions. Iron ore waste red ochre has been used as source of iron in the coating. The slag has been characterized for thermal stability, density, specific heat, enthalpy of reaction

Nanocomposites of ordered mesoporous carbon with silica coated magnetite nanoparticles (Fe3O4@SiO2-CMK-8, MNCs) were synthesized by carbonizing sucrose inside the pores of the Kit-6 mesoporous silica and used to remove Ponceau 4R from aqueous solutions. The synthesized adsorbent was characterized by Fourier Transform Infrared (FT-IR) spectroscopy, X-ray diffraction (XRD), scanning electron microscope

A small-signal radio-frequency (RF) parameters extraction model along with analog/RF and linearity distortion performance analysis are realized for virtually doped (VD) recessed source/drain dopingless junctionless transistor (Re S/D DLJLT) via 3-D device simulations. A simple and accurate RF non-quasi-static (NQS) model is developed to directly extract the extrinsic and intrinsic parasitic components

The performance comparison and the temperature profile of AlGaN/GaN HEMT on different substrates are investigated. It results the maximum drain-source current (IDS) of 1.08 A/mm, 1.04 A/mm, 0.81 A/mm and 0.669 A/mm for AlGaN/GaN HEMT on Diamond, Sapphire, Silicon Carbide and Silicon substrates respectively. In addition, it contributes the breakdown voltage of 62 V, 100.4 V, 174 V and 298 V for Sapphire

Silica is a major inorganic component of rice husk and present in the form of nanoparticle in it. Therefore, it is possible to extract high purity amorphous silica nanoparticles by simple thermo-chemical treatments. So, in this study amorphous silica nanoparticles were tried to produce from rice husk ash through an eco-friendly chemical treatment approach. Characteristics of the extracted nanoparticles

Workfunction modulated dual material gate FinFET (WMDMG-FinFET) is proposed to improve the DC performance of the device. A dual metal gate FinFET with linear modulation in workfunction along the source side of gate electrode keeping drain side gate electrode workfunction to be constant is introduced. Its subthreshold performance (i.e., switching ratio and subthreshold swing) is enhanced by introducing

In the present study, Mg-4Zn-1Si alloy was subjected to equal channel angular pressing (ECAP) up to 4 passes at 300 °C, followed by ball burnishing using 0.3 mm depth of press, 300 mm/min feed and 1 pass successfully. The effect of ECAP and ECAP + ball burnishing process on microstructure, mechanical properties (tensile and hardness) and corrosion behavior was systematically investigated. After 4 pass

This work aims to study of the effect of increase in an atoms numbers added to the (PVA-NiO-SiC) structures on the geometrical parameters, electronic and spectroscopic characteristics for low cost electronic applications by Gaussian 0.9 program with help of Gaussian View 0.5 using DFT with (LanL2DZ). The structural, electronic and optical properties included: energy gap, cohesive energy, chemical softness

A dual-channel single gate junctionless FET (DCJLT) is investigated to improve the analog/RF performance. The gate of proposed structure is placed in a vertical trench and two channels are taken on both sides of the gate. The proposed device is studied with moderate and heavily doped drain concentrations which are named as MDD-DCJLT and HDD-DCJLT, respectively. The performance parameters of both devices

In this paper, incorporation of titanium nanoparticles into LTA zeolite (Linde Type A Zeolite) was synthesized by in-situ incorporation of titanium precursors within hydrothermal synthesis of LTA zeolite from local kaolin. More than one evidence for the presence of nano TiO2 including XRD, IR, DR, and SEM techniques. Mutual removal /photodecomposition of heavy metal/organic dye including methylene

This article statistically investigates the effect of various parameters such as material factors: silicon carbide (SiC) fraction, graphite (Gr) fraction and mechanical factors: normal load, sliding distance and speed on the sliding wear rate of self-lubricating AZ91D-SiC-Gr hybrid magnesium composites. The self-lubricating hybrid composites were fabricated using advanced vacuum assisted stir casting

In this paper, a new two-dimensional analytical model for our proposed InAs/Si based double-gate dual-metal tunnel field-effect transistor (DG-TFET) with graphene nano-ribbon is presented. Incorporating group III-V material in source – channel junction, which in turn forms heterojunction results better device performance. Moreover, thin graphene nano-ribbon placed over intrinsic channel can tune the

Capacitive pressure sensors have become a reasonable choice due to their low power consumption, energy efficiency, and robustness. In this paper, a thorough investigation of MEMS based capacitive pressure sensor with square diaphragm has been carried out. A comparative study of the diaphragm displacement and capacitance as a function of external pressure and temperature has been done by using various

In this investigation, the effect of sodium hexafluorosilicate addition on the mechanical and microstructural properties of metakaolin-based geopolymers cured at ambient temperature was evaluated. The geopolymers were manufactured using metakaolin as a raw material with Sodium hexafluorosilicate Na2SiF6 powder as an additive, and a mixture composed of NaOH, KOH, and sodium silicate together as an activating

This research paper investigates the influence of process parameters during the synthesis process of silica on its micro-structural properties such as size, crystalline or amorphous behavior, surface morphology, purity, functional groups attached etc. In this work, silica and nano silica are extracted from Rice Husk Ash (RHA) which is an agro waste by green chemistry route. The extracted silica is

In this article, the electrical behavior of short channel SiGe Heterostructure Junction-Less DG-MOSFET have been studied by incorporating the quantum mechanical effect and short channel effects. Analytical model and simulation result shows how the device process parameters like gate oxide thickness, silicon thickness, channel doping concentration, channel or gate length etc. have an impact on the D

Cost effective machining of hybrid metal matrix composites (HMMC’s) with required surface integrity and without surface flaws is a challenging task for modern industries. This research explores the effect of end milling factors (spindle speed, feed rate, and depth of cut) and also weight percentage of reinforced materials on the surface integrity (surface roughness and microhardness) and material removal

In this paper, we propose and simulate a novel double gate tunnel field effect transistor (DG-TFET) employing a metallic drain and a gate-drain underlap. The use of a metallic drain and an underlap results in complete ambipolar suppression in the proposed TFET. A 2D calibrated simulation studies have revealed that ambipolar current suppression of ~ 5 orders, without affecting the on-state current of

In the complex oral atmosphere, these materials undergo drastic variations in the elastic modulus and yield strength over the operation transition range. This research work aims to demonstrate the efficacy of MPTS (M)/APTES (A) treated nano-hydroxyapatite (n-HAPs) filler (i.e., 0, 4, 8 & 12 wt.%) in the development of high strength, thermally stable photocurable dental composite over a temperature

Alumina and Silicon Carbide based composites are routinely used in mechanical, automobile, ceramic and aerospace industries with numerous reinforcements. Reinforcements increase the physical, chemical, mechanical, thermal and tribological properties and make Al2O3-SiC suitable for a specific application. In this research, Titanium Boride powder of average size 95 nm reinforced into Al2O3-SiC nano-composite

This study investigates the influence of micro and nano silicon carbide on properties of copper matrix composites/nanocomposites containing up to 4 wt% of reinforcement concentration. It was observed that an increase of SiC (both micro and nano sized) content resulted in a higher hardness, compressive strength and better wear properties. However, nano SiC reinforced composite materials have better

A facile synthesis of silicon-containing trimethylsilylated quinolines, 20 from 2-chloro-quinoline-3-carboxaldehyde, 19 are accounted for utilizing trimethylsilyl cyanide (TMSCN) as a reagent, zinc iodide (ZnI2) as a catalyst in dichloromethane (DCM) at room temperature with excellent yields. Further, silylated quinolines, 20 were converted into quinolinyl acetonitriles, 21 in the presence of dilute

In this paper, a triple gate (TG) cavity based, polysilicon junctionless (JL) ion-sensitive field-effect transistor (ISFET) architecture has been proposed for the first time. The performance of the proposed device has been compared with conventionally doped ISFET. The effect of pH is investigated for different adhesion layers, device layer thickness (tsi), electrolyte thickness (te) and, channel lengths

In this paper, Silicon (Si) nanoparticles were synthesized using “magnesium-thermic chemical reduction” technique from bentonite mineral. At first, bentonite purification was performed by reflux and hydrolysis to remove non-silica impurities. Then, the magnesium-thermic processes for conversion of SiO2 to Si were carried out and three parameters: (a) stoichiometric ratio of [Mg/ Bentonite] = 1:1, 2:1

Clustering techniques are used to group the data based on the structure or through classification to reduce the mathematical complexity of large datasets. The hierarchical and partitioning approach are two broad clustering/classification techniques in data-mining. An attempt has been made to study the possibilities of taking the advantages of these approaches to machining. AlSi7/63% of SiC hybrid composite

In this paper, a compact 2D analytical modelling of surface potential and simulation of Si-Ge hetero-junction Dual Material Gate Vertical t-shape T-FET is presented. In the proposed model, device is divided into two gate-metal work function named as tunneling gate and auxiliary gate. Both the biasing voltage of source and drain will have controlled effect on the device’s surface potential which are

Presence of impurities in a mechanical system have a great effect on its mechanical properties, some impurities can defeat fatigue life, while others may exert a highly careful effect. The principal usage of Aluminum alloys is in the production of plane light structures, panels, and metallic frameworks. The second largest consumer is the industrial vessels; this shows clearly the fastest growth with

In this work, the high-temperature reliability of the Black Phosphorus Trench (BP-T) MOSFET device has been analyzed. When the temperature is very high (500 K), the proposed device (BP-T-MOSFET) shows very high reliability with less effects in the device performance. The device is also calibrated with the experimental data. All the simulation has been performed using ATLAS-3D device simulator. BP-T-MOSFET

This work investigates the influence of silicon based coupling agents on visco-elastic properties of natural filler dispersed epoxy resin composites. Also this work attempts to explore the possibility of using silicon coupling grafted natural fillers as potential fillers for polymer composites. Ground nut shell power (GS powder), rice husk and saw dust were selected as reinforcement for this current

This experimental investigation deals with electrical discharge machining of Al-SiC metal matrix composite using a brass electrode to analyze the three major technological response characteristics concerning surface roughness, overcut, and material removal rate. Forty-six sets of experimental trials are conducted by considering five cutting parameters (discharge current, gap voltage, pulse-on-time

Since fabric-polymer laminates are being used in several engineering applications, it is imperative to compute and analyse the performance of any novel fabric reinforced polymer laminates while machining. Given these perspectives, an endeavor has been made to formulate a polymer sandwich laminate by incorporating industrial by-product & natural fibres and to machine the sandwich laminate using Abrasive