In this work, the junctionless (JL) feature is incorporated in a newly invented device called vertical super-thin body (VSTB) FET and a comparative exploration of DC and analog/RF figures of merit (FoM) is reported for various gate dielectric materials with high-k (Si3N4/HfO2) and low-k (SiO2) in this novel device through a properly calibrated Sentaurus TCAD tool. A significant minimization of short

We applied taxonomy of characterization techniques to the vertical multi-junction VMJ cell for several light concentrations. The results of the analysis of the (I-V) curves for each concentration show that we cannot differentiate between the two domains of predominance of the diffusion and recombination currents if the rod is very slightly forward biased, but the domain of the series resistance is

Rapid and sensitive detection of fat concentration in milk is a necessary part for citizens in each country. Bio-photonic sensing techniques are an accurate best way to detect biosensing measurements. The main aim of the proposed device is to make a more effective sensor to detect fat concentration in milk. A novel bio-photonic sensor based on the ternary photonic crystal of porous silicon is proposed

The present work investigates about the feasibility of polyethylene wax (PW) powder as a successful additive in the investment casting (IC) ceramic shell system for mainly, enhancing its porosity and permeability. This was achieved by modifying the usual secondary ceramic slurry with 4 wt% of PW powder to have secondary coats containing it. The experimental results affirmed that the PW powder modified

Terahertz (THz) sources have attracted special attention for various applications. Compared to the standard silica-based optical fibers, silicon waveguides have more advantages such as higher refractive index and lower absorption loss over the THz region. In this paper, for the first time, a rib silicon waveguide based on the photonic crystal (PC) idea is designed and by using the scalar modulation

The Silicon (Si) contained diamond like carbon (DLC) nanocomposite were prepared by using thermal chemical vapour deposition (CVD) technique by varying the acetylene (C2H2) flowrates. The scanning electron microscope (SEM) results showed a smoother surface of nanocomposite at low C2H2 flowrates. The atomic force microscope (AFM) reveals the increase of particle size and surface roughness of the composite

The present scenario indefinitely needs certain developments in the field of renewable energy as an effective replacement of conventional energy sources. Reflection loss in solar cell is one of the reasons for reduction in power conversion efficiency which can be controlled through antireflective coatings on solar cell surface. This current research focuses on the development of MoSe2 nano-crystalline

An integrated design based on Gate-All-Around (GAA) silicon Junctionless (JL) vertical profile Nanowire (NW) structure has been proposed for JL-NW-Tunnel-Field Effect Transistor (JL-NW-TFET). A uniform high doping concentration (10−19) has been used to make the device a Junctionless structure. The parametric variations of the JL-NW-TFET have been analyzed such as ON-current (ION), OFF-current (IOFF)

This paper proposes the Asymmetric Double Gate Silicon Substrate HEMT (ADG-Si-HEMT) to study the carrier concentration and intrinsic small signal parameters of the InSb/AlInSb silicon wafer DG-HEMT device. The HEMTs work as a three-port system and the device is named Asymmetric Double Gate HEMT when the top and bottom gates are biased with different gate voltages. The position of quasi-Fermi energy

This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded static, analog, and distortion performance. The crucial static and analog parameters, for instance, electric field, potential, band diagram, electron concentration, transconductance, quality factor, drain current, early voltage

This work presents the development of a porous silicon-based capacitive sensor for the time-effective and low-cost detection and quantification of organic solvents. The prototype chip was fabricated using a mechanized pulse fiber laser etching process in order to develop a single-layer silicon substrate with uniform porous structures. This enables a consistent surface area for sample distribution inside

In this paper, the use of hetero-dielectric in quadruple gate Tunnel Field Effect Transistor (QG-TFET) is proposed to simultaneously improve the ON current and the ON-OFF ratio. The analytical models for the surface potential and the electric field for the QG-TFET are obtained by solving 2D-Poisson equations with appropriate boundary conditions. The analytical solution for band-to-band generation is

The present investigation pertains to synthesize aluminium bronze silicon carbide composite by powder metallurgy route. Three various weight percentages of silicon carbide (0, 2, 4 & 6) were reinforced with aluminium bronze matrix (Cu-20 %Al-4 %Ni). This compact was heated at two different temperatures such as 650 and 750 °C using tubular furnace. The effect of silicon carbide on density, sinterability

A stepped split triple-gate SOI LDMOS with P/N strip (P/N SSTG SOI LDMOS) is proposed, which has ultralow specific on-resistance (Ron,sp) and low switching losses. The proposed device has a triple-gate (TG) and stepped split gates (SSGs). P strip, N-drift and oxide trench are alternately arranged in the Z direction. Meanwhile, the SSGs are located in the oxide trench of the N-drift region and are distributed

Wide bandgap (WBG) semiconductor materials have the capability of making power electronic components with a smaller size, faster switching speed, more reliability, and greater efficiency than their silicon-based counterparts. Real progress in the field of power electronics occurred when WBG devices came into use. Reportedly, among the various WBG semiconductors, gallium nitride (GaN) and silicon carbide

The influence of double deck T-gate on LG = 0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and

In this paper, electrical and microwave characteristics of Al0.1Ga0.9 N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 μm, gate to drain distance LGD = 1 μm, and HfO2 (SiN) passivation

Piezoelectric type vibration energy harvesters are prominently used due to their simple operation and compatibility with MEMS fabrication technology. Cantilever structures fixed from one end and free from the other are widely used to realize a Piezoelectric vibration energy harvester. In this paper, a fixed -fixed or guided beam type Piezoelectric Vibration Energy Harvester has been fabricated and

Tunnel Field Effect Transistor can be introduced as an emerging alternate to MOSFET which is energy efficient and can be used in low power applications. Due to the challenge involved in integration of band to band tunneling generation rate, the existing drain current models are inaccurate. A compact analytical model for simple tunnel FET and pnpn tunnel FET is proposed which is highly accurate. The

Through this paper, we discuss how Tunnel Field Effect Transistors can be utilized for the detection of biomaterials hence acting as a biosensor. The device proposed is a 3-D Doping less Nanotube Tunnel Field Effect Transistor (DL-NT-TFET) device with a wrap-around gate or a Gate all around to provide maximum control over the charge carriers as surface control increases. The source (p+) and drain (n+)

In recent technology, the demand for 3D multiple-gate MOSFETs such as FinFETs increase. In this paper, FinFETs are explored and reviewed. The scaling of planar MOSFET below 32nm technology increases the short channel effects (SCE). To improve the concert in low-power VLSI logic circuits and reduced the SCEs, we need enhanced gate controlling over the channel by using multigate technology. Here, we

The most affected disease in recent years is Severe Acute Respiratory Syndrome Coronavirus 2 (SARS-COV-2) that is notable as COVID-19. It has been started as a disease in one place and arisen as a pandemic throughout the world. A serious health problem is developed in the lungs due to the effect of this coronavirus. Sometimes it may result in death as a consequence of extensive alveolar damage and

In this paper, a SOI MOSFET is proposed using a P-N structure and an electrically hole-free region (EHFR-SOI). In this structure, to improve the electrical characteristics such as short channel effects, self-heating effects, and floating body effects, a Si3N4 layer is used on the source side of the SOI MOSFET with a P-N structure. The proposed technique converts the P-N structure to a N-P-N structure

The characterization of diopside –based glass of the composition Cu0.50Ca0.75Mg0.75Si2O6 containing small additions of Cr2O3 or TiO2 was explored. The techniques used for the characterization process include AC conductivity (σac), X-ray diffraction (XRD) and Scanning electron microscopy (SEM). However, the prepared dark green glasses show very little devitrification of traces diopside, cuprite and

At present, industries require tremendous new technologies to solve the challenges faced in the production process. In the existing researches, Al7075 is frequently used but Al7050 is rare hence, in this study the effort has been made on the development of Al7050 and Al7075 alloys reinforced with Granite and Silicon carbide particles using stir casting technique. The nine different reinforcing mix

Ge-source dopingless tunnelling field effect transistor (Ge-source DLTFET) with the optimization of dielectric oxide thickness under the source and the gate contacts is proposed and investigated by calibrated 2D TCAD device simulation. As the structure is realized using dopingless technique, this enables lower thermal budget, higher immunity towards the random dopant fluctuations (RDFs) effects and

Demand for accommodating more and new functionalities within a single chip such as SOC needs novel devices and architecture such as FinFET devices instead of MOSFET. FinFET emerged as a non-planar, multigate device to overcome short channel effects such as subthreshold swing deterioration, drain induced barrier lowering and threshold voltage roll-off which degrade circuit performance. As the need of

In this work Copper based composites were synthesized from Cu and SiC powders using Powder Metallurgy (PM) technique. The composition of the composites are Cu, Cu-5 wt% SiC, Cu-10 wt% SiC and Cu-15 wt% SiC were made using 400 kN hydraulic press and sintered at 900 °C using muffle furnace for 4 h. Scanning Electron Microscope (SEM) analysis was done on ball milled powders and sintered samples showed

In this paper, a small size on-chip temperature sensor based on microring resonator (MRR) is introduced. The sensor consists of a small microring waveguide with a radius of 3.1 μm and a runway waveguide with the same bending radius. To a certain extent, it solves the problem that high sensitivity and small size cannot coexist in the current on-chip temperature sensor, and provides a reference scheme

The gate material work function engineering and hetero-dielectric engineering concepts are discussed in this paper to design a novel triple material DG Tunnel FET. The three different work functions and the hetero-dielectric material within the transistor control the charge carrier density in the source, drain, and channel region. The heterojunction germanium and silicon material in the source-channel

With the purpose of preparing an anti-bacterial adhesion dental resin, two silicone methacrylates (SMAs) were synthesized. After being confirmed by the FT-IR and 1H-NMR spectra, the SMAs were incorporated into commonly used Bis-GMA/TEGDMA (50/50, wt./wt.) dental resin systems with an incremental series of concentrations. Physicochemical properties, anti-bacterial adhesion effect, and protein adsorption

The thermoluminescence technique was employed to study bioglass matrix prepared using the traditional technique of glass making. The synthesized bioglass matrix were investigated using X-ray diffraction (XRD), and differential thermal analysis (DTA) has been studied. The highest thermoluminescent intensity was found for composition bioglass 26.91 % CaO, 45.68 % SiO2, 2.50 % P2O5, 25.094 %Na2O (mol%)

Aluminum alloys were used in engineering applications, such as aircraft, aerospace, automobiles, and various other fields due to being light-weight, have relatively high strength, retain good ductility at sub-zero temperatures, have high corrosion resistance, and are non-toxic. Three-dimensional printing was used for the fabrication of aluminum alloys and aluminum metal matrix composites with high

A mathematical model for the effect of oxide thickness on ambient conduction is provided in the Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB-CNTFET). To develop them as the future of IC (integrated circuit) technology, the suppression of ambipolar behaviour in SB-CNTFET is imperative. The ambipolar nature of SB-CNTFET contributes to a high amount of leakage current. tox ≈ 49

The Poly(vinyl alcohol) (PVA)/Silicon Carbide (SiC) nanocomposites thin films have been precipitated on glass substrates with different percentage content of SiC (1%, 2%, 3%, and 4% wt.) by utilizing the casting method. UV-Visible wavelength ranges from (200–800 nm) were used to compute the optical properties. The results of (PVA/SiC) nanocomposite thin films were used to calculate optical properties

In this paper, we propose a new technique in silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in order to obtain a high breakdown voltage. The structure is characterized by multiple N and P doped wells (diode wells) in the buried oxide. Therefore, we call the structure multiple diode wells SOI LDMOS (MDW-LDMOS). The key idea in this work is

This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance. Attributes of the ETL, its thickness (tepi) and doping concentration (Nepi) are varied and their impact on device electrical

The metamaterial absorber intends the structure of the solar cell to boost its internal parameters like the short-circuit current density (Jsc), Voc and efficiency. In this work, A novel single band polarization insensitive metamaterial (MTM) absorber is designed and investigated for solar cell energy harvesting applications. The proposed MTM unit cell is made of three layers named as glass bottom

Hydrogen peroxide (H2O2) plays a vital role in some of the metal assisted chemical etching (MACE) processes for silicon. However, it evaporates easily during etching at higher temperatures and this makes the process difficult to control. As a result, the MACE process for the inverted pyramid (IP) texturization that uses H2O2 is industrially unattractive. Herein, we proposed an innovative method to

Nanoporous silicon (NPS) with mesopores size (2–50 nm) formed by anodization of highly doped p-type silicon at specific anodizing conditions is highly needed for technological applications. However, the surface of the NPS was rapidly oxidized upon exposure to the atmosphere due to the presence of boron. Therefore, there is a need for the leaching of the boron from the NPS surface. In the present work

Zinc lead silicate glass system contains different amount of WO3 were fabricated using the classical melt-quench technique. The nature of the samples was investigated using X-ray diffraction. The ultrasonic velocities and elastic moduli were tested experimentally after that the results were compared by using the theoretical consideration. With increasing the WO3 content, decreasing the molar volume

This study evolves an ultrasensitive label free electrical device, the silicon nanowire field effect transistor (SiNW FET) for cardiac troponin I (cTnI) in acute myocardial infarction (AMI). In this work, SiNW FET is designed, simulated using COMSOL semiconductor module to identify the presence of different concentrations of cTnI present in human blood. The surface of the SiNW is functionalized with

Understanding on the bioavailability of silicon (Si) in intensively cultivated agricultural ecosystem still remains a challenging topic which requires attention by the scientific community. Monosilicic acid (soluble Si) and polysilicic acid (insoluble Si) affect various physicochemical properties of the soil. Thus, quantification of plant available silicon (PAS) content is a crucial step in order to

The present study investigates the properties of RPC (Reactive Powder Concrete) developed using low-cost eco-friendly materials such as pyrogenic silica (PS) and coir pith (CP) fine aggregates. This study investigates the effects of PS as silica fume (SF) replacement which is the main constituent for the production of reactive powder concrete which contained coir pith as a fine aggregate replacement

In this paper, the label free detection of neutral and charged biomolecules with the potential capability of dielectric modulated double gate junctionless metal oxide semiconductor field effect transistor (DM-DGJLT) is explored. The design parameters of biosensor have been varied to investigate the sensitivity of the proposed device. The sensitivity of the proposed device is explored by using the high

A Cylindrical Dielectric Resonator antenna (CDRA) along with silicon based Rectangular Dielectric Resonator (RDR) slab is proposed in this paper for terahertz (THz) applications. This antenna provides multi-band response at different resonant frequencies. Unique feature of the proposed antenna is, it provides Circular Polarization (CP) behaviour at quad band in the field of THz dielectric resonator

The mechanical properties of nanostructures are a researcher’s favorite topics. In the meantime, the mechanical and physical properties of the two dimensional structures and the nanotubes have attracted greater attention due to their wide application. Si (Si) nanotubes are structures consisting of Si atoms that are arranged as honeycombs. This structure has created some special properties in Si nanotubes

This paper illustrates delta-doped Hetro-dielectric Germanium on insulator vertical tunnel field-effect transistor (DDH-GeOI VTFET) and its 2D simulations are investigated using ATLAS SILVACO TCAD tool for ultra-low power and high-performance applications. The hetro-dielectric engineering under the gate and use of low bandgap Ge material in source improves the exhibition of the device by increasing

This article presents the analytical modeling of the subthreshold drain current of junctionless channel-modulated double-material double-gate (\( JL \)-\( CM \)-\( DMDG \)) MOSFET. The first time under the full depletion mode, the center channel potential and threshold voltage (\( {V}_{TH} \)) have been derived. The center channel potential has been produced by solving the 2D Passion’s equation with

Particulate reinforced aluminium matrix composites (AMCs) were prepared by stir cast method and their wear and corrosion properties were investigated. The structural and morphological properties of the AMCs were examined by XRD and SEM analysis. EPMA validates the dispersion of SiC and MoS2 particles in the metal matrix. The wear of the aluminium alloy Al6063-T6(AM-0), 3% nano SiC reinforced composite(AMC-1)

By employing density functional theory (DFT), the sensitivity of the Si-doped and the pristine Boron carbide (BC3) nanosheets to acetaminophen (ACE) was scrutinized. The ACE drug does not affect the electronic properties evaluated for the pristine BC3 sheet. Alternatively, its sensitivity and reactivity are increased to the ACE drug considerably after doping it by Si. The adsorption of the ACE drug

Present work focusses on the fabrication of Al-10% SiC-4% Kaoline HMMC by using conventional sintering, Microwave- assisted sintering (MAS) and Spark Plasma Sintering (SPS) techniques. Tensile, Compression and hardness tests were performed as per ASTM standards to study the effect of sintering mechanisms on the fabricated HMMC specimens. Results reveal that an enhancement of 13.3% in U.T.S and 11.7%

Temperature drift restricts the measurement accuracy and application fields of high temperature pressure sensors. In this work, a theoretical model of temperature characteristics in SiC piezoresistive pressure sensor was developed to analyze the influence factors of temperature zero drift, including temperature dependence of resistivity and thermal expansion deformation of diaphragm. Then the effect

Oryza sativa, king of cereals, is staple food for almost one third of global population. Water deficit is one of the main abiotic factors mitigating its yield potential. Among possible controlling practices, application of Silicon and Selenium are known to affect various physiological and biochemical mechanisms to curtail water deficiency stress. The purpose of the present research was to observe the

In this paper, the polyvinyl pyrrolidine (PVP) polymer layer doped by barium titanate (BaTiO3) nanostructures has been prepared as an interfacial layer to fabricate a metal-semiconductor-metal (MPS) diode. The inserted layer in the metal-semiconductor (MS) structure can be changed its dielectric properties which have been studied in this work. In addition, the frequency-dependent impedance measurements

Advancement in the technology and device engineering has a huge impact on the evolution of biosensors and their designing principles. Various biosensors have been designed and reported depending upon the application it will be serving. Different biosensors have played an important role in vital applications in multifarious fields such as medical field, food industry, ecological monitoring and so on

With increasing demand for vanadium (V) products in recent years around China, the V utilization from V-bearing shale becomes very important. The V extraction from a shale in Shiyan, Hubei, China was systematically studied. For laboratory experiment, more than 75% of the V can be leached under the experimental conditions of the roasting temperature of 800 °C to 830 °C, the mass ratio of Na2CO3 to NaCl

The growing demand for miniaturized transistors with increased performance and low power consumption has scaled down the device to the nanoscale regime. The design and modeling of such small devices need a reliable computing technique for simulation. Since the flow of electrons in such short channels is due to differences in electrochemical potential between source and drain which of ballistic transport

In this work, a detailed investigation of RF and linearity analysis of junction-less Gate All Around (JLGAA) MOSFETs through SILVACO TCAD device simulator have been demonstrated. The impact of different metal gate work functions on various RF parameters such as drain current, transconductance (gm), output conductance (gd), gate capacitances (Cgs and Cgd), transconductance generation factor (TGF), cut-off

The degradation and mineralization of phenol have been studied by means of photocatalysis process using UV light (λmax ≈ 365 nm). The investigated nanocompositephotocatalyst TiO2-Py(750) (SBET=16.58 m2.g− 1), with mixed phases of Anatase and Rutile (52.2/10.7), have been sol-gel synthetized and calcined at 750 °C using a decarbonatedpyrophyllite as layered clay and titanium (IV) t-butoxide, Ti(OCH2CH2CH2CH3)4as