Abstract Bi1-xNdxCuSeO (x = 0; 0.05; 0.10; 0.15) was fabricated by the solid-state reaction and the reactive spark plasma sintering for comparative study. It was demonstrated that BiCuSeO could be formed in-situ by the reaction between Bi2O3, Bi, Cu and Se during the densification process. The effect of Nd doping on the thermoelectric properties has been investigated. The results indicated that for both series of the samples the substitution of Bi3+ by Nd3+ resulted in the increase of charge carrier concentration mainly caused by Bi/Cu deficiencies formation with the substitution. However, the specimens obtained by reactive spark plasma sintering had lower hole concentration which may originate from the high speed of the process resulted in induced point defect and interface scattering and another phase formation mechanism leading to the smaller amount of Bi/Cu deficiencies.

中文翻译：

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Nd取代BiCuSeO氧硒化物的反应放电等离子体烧结和热电性能

摘要 Bi1-xNdxCuSeO (x = 0; 0.05; 0.10; 0.15) 通过固态反应和反应放电等离子体烧结制备，用于比较研究。结果表明，在致密化过程中，Bi2O3、Bi、Cu 和 Se 之间的反应可以原位形成 BiCuSeO。研究了 Nd 掺杂对热电性能的影响。结果表明，对于这两个系列的样品，Bi3+ 被Nd3+ 取代导致电荷载流子浓度增加，主要是由取代形成的Bi/Cu 缺陷引起的。然而，