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Electronic bandgap manipulation of monolayer WS2 by vertically coupled insulated Mg(OH)2 layers
Journal of Alloys and Compounds ( IF 6.2 ) Pub Date : 2019-05-01 , DOI: 10.1016/j.jallcom.2019.01.129
Fang Wang , Anyang Cui , Huimin Sun , Bin Zhou , Liping Xu , Kai Jiang , Liyan Shang , Zhigao Hu , Junhao Chu

Abstract Searching for novel two-dimensional (2D) materials with tunable electrical and optical properties is significant to develop next-generation multifunctional nanoscale optoelectronic devices. The new insulated Mg(OH)2 is a promising and stable 2D material to construct heterojunction with transition metal dichalcogenides (TMDs). Here, WS2-Mg(OH)2 is experimentally designed and investigated. The similarity of lattice constants for the two materials is confirmed with selected area electron diffraction for the first time. By stacking Mg(OH)2 layers on WS2 monolayer, the Fermi level of WS2 is distinctly elevated, making the WS2-Mg(OH)2 a promising heterostructure for constructing and optimizing tunable electronic devices. We also showed the adjustable transition properties with enhanced coupling effect by thinning the Mg(OH)2 layers in the heterostructure. This study not only demonstrates the tunable Fermi levels and optical characteristics of WS2-Mg(OH)2, but also could promote the broad investigations of novel 2D materials for various optoelectronic device applications in nanoscale.

中文翻译:

通过垂直耦合绝缘 Mg(OH)2 层对单层 WS2 进行电子带隙操纵

摘要 寻找具有可调电学和光学特性的新型二维 (2D) 材料对于开发下一代多功能纳米级光电器件具有重要意义。新型绝缘 Mg(OH)2 是一种有前途且稳定的二维材料,可用于与过渡金属二硫属化物 (TMD) 构建异质结。在这里,WS2-Mg(OH)2 是通过实验设计和研究的。两种材料的晶格常数的相似性首次通过选区电子衍射得到证实。通过在 WS2 单层上堆叠 Mg(OH)2 层,WS2 的费米能​​级明显提高,使 WS2-Mg(OH)2 成为构建和优化可调电子器件的有前途的异质结构。我们还通过减薄异质结构中的 Mg(OH)2 层,展示了具有增强耦合效应的可调过渡特性。这项研究不仅证明了 WS2-Mg(OH)2 的可调费米能级和光学特性,而且可以促进对用于纳米级各种光电器件应用的新型二维材料的广泛研究。
更新日期:2019-05-01
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