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FIBSIMS: A review of secondary ion mass spectrometry for analytical dual beam focussed ion beam instruments
Progress in Crystal Growth and Characterization of Materials ( IF 5.1 ) Pub Date : 2019-02-01 , DOI: 10.1016/j.pcrysgrow.2018.10.001
Lex Pillatsch , Fredrik Östlund , Johann Michler

Abstract Secondary ion mass spectrometry (SIMS) is a well-known technique for 3D chemical mapping at the nanoscale, with detection sensitivity in the range of ppm or even ppb. Energy dispersive X-ray spectroscopy (EDS) is the standard chemical analysis and imaging technique in modern scanning electron microscopes (SEM), and related dual-beam focussed ion beam (FIBSEM) instruments. Contrary to the use of an electron beam, in the past the ion beam in FIBSEMs has predominantly been used for local milling or deposition of material. Here, we review the emerging FIBSIMS technique which exploits the focused ion beam as an analytical probe, providing the capability to perform secondary ion mass spectrometry measurements on FIBSEM instruments: secondary ions, sputtered by the FIB, are collected and selected according to their mass by a mass spectrometer. In this way a complete 3D chemical analysis with high lateral resolution We first report on the historical developments of both SIMS and FIB techniques and review recent developments in both instruments. We then review the physics of interaction for incident particles using Monte Carlo simulations. Next, the components of modern FIBSIMS instruments, from the primary ion generation in the liquid metal source in the FIB column, the focussing optics, the sputtered ion extraction optics, to the different mass spectrometer types are all detailed. The advantages and disadvantages of parallel and serial mass selection in terms of data acquisition and interpretation are highlighted, while the effects of pressure in the FIBSEM, acceleration voltage, ion take-off angles and charge compensation techniques on the analysis results are then discussed. The capabilities of FIBSIMS in terms of sensitivity, lateral and depth resolution and mass resolution are reviewed. Different data acquisition strategies related to dwell time, binning and beam control strategies as well as roughness and edge effects are discussed. Data analysis routines for mass identification based on isotope ratios and molecular fragments are outlined. Application examples are then presented for the fields of thin films, polycrystalline metals, batteries, cultural heritage materials, isotope labelling, and geological materials. Finally, FIBSIMS is compared to EDS, and the potential of the technique for correlative microscopy with other FIBSEM based imaging techniques is discussed.

中文翻译:

FIBSIMS:分析双束聚焦离子束仪器的二次离子质谱分析

摘要 二次离子质谱 (SIMS) 是一种众所周知的纳米级 3D 化学作图技术,检测灵敏度在 ppm 甚至 ppb 范围内。能量色散 X 射线光谱 (EDS) 是现代扫描电子显微镜 (SEM) 和相关双束聚焦离子束 (FIBSEM) 仪器中的标准化学分析和成像技术。与使用电子束相反,过去 FIBSEM 中的离子束主要用于材料的局部研磨或沉积。在这里,我们回顾了新兴的 FIBSIMS 技术,该技术利用聚焦离子束作为分析探针,提供在 FIBSEM 仪器上进行二次离子质谱测量的能力:由 FIB 溅射的二次离子被收集并根据其质量选择质谱仪。通过这种方式实现具有高横向分辨率的完整 3D 化学分析 我们首先报告了 SIMS 和 FIB 技术的历史发展,并回顾了这两种仪器的最新发展。然后,我们使用蒙特卡罗模拟回顾了入射粒子相互作用的物理学。接下来,现代 FIBSIMS 仪器的组件,从 FIB 柱中液态金属源中的初级离子生成、聚焦光学器件、溅射离子提取光学器件,到不同的质谱仪类型,都进行了详细介绍。重点介绍了并行和串行质量选择在数据采集和解释方面的优缺点,然后讨论了 FIBSEM 中的压力、加速电压、离子起飞角和电荷补偿技术对分析结果的影响。审查了 FIBSIMS 在灵敏度、横向和深度分辨率以及质量分辨率方面的能力。讨论了与停留时间、分箱和光束控制策略以及粗糙度和边缘效应相关的不同数据采集策略。概述了基于同位素比率和分子碎片进行质量鉴定的数据分析程序。然后介绍了薄膜、多晶金属、电池、文化遗产材料、同位素标记和地质材料领域的应用实例。最后,将 FIBSIMS 与 EDS 进行了比较,并讨论了相关显微镜技术与其他基于 FIBSEM 的成像技术的潜力。讨论了与停留时间、分箱和光束控制策略以及粗糙度和边缘效应相关的不同数据采集策略。概述了基于同位素比率和分子碎片进行质量鉴定的数据分析程序。然后介绍了薄膜、多晶金属、电池、文化遗产材料、同位素标记和地质材料领域的应用实例。最后,将 FIBSIMS 与 EDS 进行了比较,并讨论了相关显微镜技术与其他基于 FIBSEM 的成像技术的潜力。讨论了与停留时间、分箱和光束控制策略以及粗糙度和边缘效应相关的不同数据采集策略。概述了基于同位素比率和分子碎片进行质量鉴定的数据分析程序。然后介绍了薄膜、多晶金属、电池、文化遗产材料、同位素标记和地质材料领域的应用实例。最后,将 FIBSIMS 与 EDS 进行了比较,并讨论了相关显微镜技术与其他基于 FIBSEM 的成像技术的潜力。然后介绍了薄膜、多晶金属、电池、文化遗产材料、同位素标记和地质材料领域的应用实例。最后,将 FIBSIMS 与 EDS 进行了比较,并讨论了相关显微镜技术与其他基于 FIBSEM 的成像技术的潜力。然后介绍了薄膜、多晶金属、电池、文化遗产材料、同位素标记和地质材料领域的应用实例。最后,将 FIBSIMS 与 EDS 进行了比较,并讨论了相关显微镜技术与其他基于 FIBSEM 的成像技术的潜力。
更新日期:2019-02-01
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