Light‐emitting diodes break barriers of size and performance for displays. With devices becoming smaller, the materials also need to get smaller. Chromium(III)‐doped oxide phosphors, which emit near‐infrared (NIR) light, have recently been used in small electronic devices. In this work, mesoporous silica nanoparticles were used as nanocarriers. The nanophosphor ZnGa₂O₄:Cr³⁺,Sn⁴⁺ formed in the mesopore after sintering. Good dispersity and morphology were performed with average diameters of 71±7 nm. It emitted light at 600–850 nm; the intensity was optimized by tuning the doping ratio of Cr³⁺ and Sn⁴⁺. Meanwhile, the light conversion efficiency increased from 7.8 % to 37 % and the molar concentration increased from 0.125 m to 0.5 m. The higher radiant flux of 3.3 mW was obtained by operating an input current of 45 mA. However, the NIR nanophosphor showed good performance on mini light‐emitting diode chips.

中文翻译：

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宽带Cr3 +，Sn4 +掺杂的氧化物纳米磷光体，用于红外微型发光二极管。

发光二极管打破了显示器尺寸和性能的障碍。随着设备变得越来越小，材料也需要变得更小。最近，已在小型电子设备中使用了掺有铬（III）的氧化物磷光体，它们发出近红外（NIR）光。在这项工作中，中孔二氧化硅纳米粒子被用作纳米载体。烧结后在介孔中形成了纳米磷ZnGa ₂ O ₄：Cr ³⁺，Sn ⁴⁺。具有良好的分散性和形态，平均直径为71±7 nm。它发出600-850 nm的光。通过调整Cr ³⁺和Sn ⁴⁺的掺杂比例来优化强度。同时，光转换效率从7.8％增加到37％，摩尔浓度从0.125  m增加到0.5  m。通过操作45 mA的输入电流可获得3.3 mW的较高辐射通量。但是，NIR纳米磷光体在微型发光二极管芯片上表现出良好的性能。