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Ultrathin MoO3 Layers in Composite Metal Electrodes: Improved Optics Allow Highly Efficient Organic Light‐Emitting Diodes
Advanced Optical Materials ( IF 9 ) Pub Date : 2018-12-06 , DOI: 10.1002/adom.201801262
Yungui Li 1 , Zheng Tang 2 , Christian Hänisch 1 , Paul‐Anton Will 1 , Milan Kovačič 3 , Ji‐Ling Hou 1 , Reinhard Scholz 1 , Karl Leo 1 , Simone Lenk 1 , Sebastian Reineke 1
Affiliation  

Molybdenum trioxide (MoO3) has been investigated as a seeding and energy‐level modification layer for ultrathin metal electrode in organic light‐emitting diodes (OLEDs). However, the optical effect of this interlayer has not been addressed so far. In this article, the influence of the thin MoO3 layer for bottom emitting OLEDs is thoroughly investigated. It is noted that a thin MoO3 layer has a substantial impact on the device performance through inducing a synergistic effect of suppressing the nonradiative surface plasmon polariton (SPP) modes and modulating the cavity resonance. In presence of MoO3 layer, the SPP mode is suppressed from 400 to 520 nm. Moreover, introducing a thin MoO3 layer reduces the reflectance of the Au/Ag electrode, resulting in a decreased destructive resonance in devices. These combined effects enable to build highly efficient OLEDs, with the external quantum efficiency and luminous efficacy of two‐unit stacked white OLEDs reaching 38.8% and 53.9 lm W−1 at 1000 cd m−2, when substrate and air modes are extracted. The efficiency is about 1.9 times higher compared to the one without MoO3 layer. The result provides insights into indium tin oxide free optoelectronic devices, as well as light extraction strategy and color purity manipulations for OLEDs.

中文翻译:

复合金属电极中的超薄MoO3层:改进的光学器件可实现高效的有机发光二极管

已经研究了三氧化钼(MoO 3)作为有机发光二极管(OLED)中超薄金属电极的晶种和能级修饰层。但是,到目前为止尚未解决该中间层的光学效果。在本文中,彻底研究了MoO 3薄层对底部发射OLED的影响。注意,薄的MoO 3层通过引起抑制非辐射表面等离子体激元极化(SPP)模式和调制腔共振的协同效应,对器件性能产生重大影响。在MoO 3层的存在下,SPP模式从400抑制到520 nm。此外,引入了薄的MoO 3层降低了Au / Ag电极的反射率,从而降低了器件中的破坏性共振。这些结合的效应使得能够构建高效的OLED ,当提取基板和空气模式时,两个堆叠的白色OLED的外部量子效率和发光效率在1000 cd m -2时分别达到38.8%和53.9 lm W -1。与没有MoO 3层的效率相比,效率大约高1.9倍。该结果提供了对无铟锡氧化物光电器件以及OLED的光提取策略和色纯度操纵的见解。
更新日期:2018-12-06
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