Al_xGa_1−xN‐based quantum wells (QWs) are fabricated on AlN with macrosteps, which are formed by using vicinal sapphire and AlN (0001) substrates. The QWs on macrosteps (MS‐QWs) show photoluminescence lifetimes of nearly 2 ns at an emission wavelength of 242 nm at room temperature (RT). This is the longest lifetime so far reported for Al_xGa_1−xN‐based QWs emitting below 270 nm, indicating the suppression of nonradiative recombination, the dominant recombination process at RT. Compared with planar QWs without macrosteps, the emission internal quantum efficiency estimated by photoluminescence spectroscopy is improved approximately by two orders of magnitude under a weak excitation condition. Consequently, Al_xGa_1−xN‐based MS‐QWs are promising structures for highly efficient ultraviolet emitters.

中文翻译：

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在宏台阶上制造的基于AlxGa1-xN的量子阱可有效抑制非辐射复合

的Al _X镓_{1- X} N基量子阱（量子阱）与宏台阶，这是通过使用邻蓝宝石和AlN（0001）衬底上形成的制造对AlN。宏观步长（MS-QWs）上的QW在室温（RT）下在242 nm的发射波长下显示出近2 ns的光致发光寿命。这是迄今为止报道的在270 nm以下发射的Al _x Ga ₁ - _x N基QW的最长寿命，表明抑制了非辐射重组，这是RT的主要重组过程。与没有宏观台阶的平面量子阱相比，在弱激发条件下，通过光致发光光谱法估计的发射内部量子效率大约提高了两个数量级。因此，铝_X嘎_{1- X}的N-MS-量子阱是有希望的结构，用于高效紫外线发射器。