2D organic–inorganic hybrid perovskites (OIPs) hold great promise for electronics and optoelectronics due to structural diversity, high photoluminescence, and tunable bandgap. Moreover, integrating 2D OIPs with the 2D materials including graphene, transition metal dichalcogenide, and other OIPs gives opportunities for various options in constructing new types of heterojunctions with novel functionalities such as enhanced charge transport properties or chemical stability. Here, a sequential vapor deposition method is presented to fabricate 2D OIP lateral heterostructure films (C₄H₉NH₃)₂PbI₄ (BA₂PbI₄)–(C₄H₉NH₃)₂(CH₃NH₃)Pb₂I₇ (BA₂MAPb₂I₇) for photodetector applications. The lateral heterostructure is realized using thermal evaporation to deposit lead iodide (PbI₂) films, then exploiting vapor transport of organic vapor to form BA₂PbI₄, BA₂MAPb₂I₇, and self‐aligned lateral heterostructure. A photodetector based on the lateral structure (BA₂PbI₄–BA₂MAPb₂I₇) shows larger photocurrent and higher on/off ratio (>10²) than those of single material‐based devices (BA₂PbI₄, BA₂MAPb₂I₇). This method to fabricate 2D OIP lateral heterostructure suggests a simple way to synthesize 2D perovskite heterostructure and may open the possibility of 2D OIP perovskites to be integrated in emerging optoelectronic devices.

中文翻译：

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基于二维钙钛矿的自对准横向异质结构光电探测器，利用气相沉积

二维有机-无机杂化钙钛矿（OIP）由于结构多样性，高光致发光和可调节的带隙而在电子学和光电子学领域具有广阔的前景。此外，将2D OIP与2D材料（包括石墨烯，过渡金属二卤化物和其他OIP）集成在一起，可以为构建具有新型功能（如增强的电荷传输性能或化学稳定性）的新型异质结提供各种选择机会。在这里，提出了一种顺序气相沉积方法来制造2D OIP横向异质结构膜（C ₄ H ₉ NH ₃）₂ PbI ₄（BA ₂ PbI ₄）–（C ₄ H ₉用于光电探测器的NH ₃）₂（CH ₃ NH ₃）Pb ₂ I ₇（BA ₂ MAPb ₂ I ₇）。横向异质结构是使用热蒸发来沉积碘化铅（PBI实现₂）膜，然后利用有机蒸汽的蒸汽输送到形式BA ₂碘化铅₄，BA ₂ MAPb ₂我₇，和自对准的横向异质结构。基于横向结构的光电探测器（BA ₂碘化铅₄ -BA ₂ MAPb ₂我₇）所示较大的光电流和开/关更高比率（> 10 ²）比单基于材料的装置（BA的₂碘化铅₄，BA ₂ MAPb ₂我₇）。这种制造2D OIP横向异质结构的方法提出了一种合成2D钙钛矿异质结构的简单方法，并可能将2D OIP钙钛矿集成到新兴的光电器件中。