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Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
Electrochemistry Communications ( IF 5.4 ) Pub Date : 2018-11-30 , DOI: 10.1016/j.elecom.2018.11.021
V. Di Palma , G. Zafeiropoulos , T. Goldsweer , W.M.M. Kessels , M.C.M. van de Sanden , M. Creatore , M.N. Tsampas

Electrodeposited cobalt phosphate has been reported as a valid alternative to noble metals as an electrocatalyst for the Oxygen Evolution Reaction (OER). In parallel, Atomic Layer Deposition (ALD) is increasingly being used in (photo)electrocatalytic applications. In this contribution we report on the electrocatalytic activity towards OER of ALD-prepared cobalt phosphate thin films. The selected ALD approach enables tuning of the Co-to-P atomic ratio, which is found to significantly affect the activity of the prepared electrocatalyst. Specifically, concurrently with a Co-to-P ratio increase from 1.6 to 1.9, the current density for OER increases from 1.77 mA/cm2 at 1.8 V vs. RHE (Reversible Hydrogen Electrode) to 2.89 mA/cm2 at 1.8 V vs. RHE. Moreover the sample with a Co-to-P ratio of 1.9 has superior performance when compared to electrodeposited cobalt phosphate thin films reported in the literature.



中文翻译:

用于氧释放反应的磷酸钴薄膜的原子层沉积

据报道,电沉积的磷酸钴可作为贵金属的有效替代品,作为氧气析出反应(OER)的电催化剂。同时,原子层沉积(ALD)越来越多地用于(光)电催化应用中。在这一贡献中,我们报道了用ALD制备的磷酸钴薄膜对OER的电催化活性。所选的ALD方法可以调节Co-P原子比,发现这显着影响了制备的电催化剂的活性。具体地说,在Co-P比率从1.6增大到1.9的同时,OER的电流密度从1.8 V vs. RHE(可逆氢电极)的1.77 mA / cm 2增加到2.89 mA / cm 2相对于RHE为1.8 V 而且,与文献中报道的电沉积磷酸钴薄膜相比,Co-P比率为1.9的样品具有优异的性能。

更新日期:2018-11-30
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