Abstract The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tremendous advances in Si preparation in hydrogen-based metalorganic vapor phase epitaxy (MOVPE) environment, III–V nucleation and subsequent heteroepitaxial layer growth. Simultaneously, MOVPE itself took off in its triumphal course in solid state lighting production demonstrating its power as industrially relevant growth technique. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of in situ, in system and ex situ characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.

中文翻译：

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III-V-硅的金属有机气相外延：实验和理论

摘要 III-V 族半导体与 Si 的集成已经进行了超过 25 年，因为它在从微电子到能量转换的各种高效应用中受到强烈需求。在过去十年中，在氢基金属有机气相外延 (MOVPE) 环境、III-V 族成核和随后的异质外延层生长中，Si 制备取得了巨大进展。与此同时，MOVPE 本​​身在固态照明生产领域取得了胜利，展示了其作为工业相关增长技术的力量。在这里，我们回顾了硅上 III-V 族异质结构的 MOVPE 生长、相关界面的制备和器件结构的制造方面的最新进展。我们专注于广泛的原位、系统和非原位表征技术。我们强调了密度泛函理论和动力学生长模拟对更深入地理解生长现象和支持实验分析的重要贡献。除了平面异质结构的新器件概念和 (001) 界面的特定挑战之外，我们还涵盖了纳米尺寸的 III-V 结构，这些结构优先在 (111) 表面上制备，并成为未来光电器件的真正候选者。