Ever since the more-than-decade-old discovery of application of mechanical exfoliation to obtain graphene, this 2-dimensional material was known for its soaring promise in various applications, owing to its excellent properties. Graphene, most popularly grown on metallic substrates by chemical vapour deposition, needs to be transferred onto dielectric substrates for multiple optical and electronic applications. During such complex and expensive transfer steps, defects are introduced into graphene, which deteriorates the quality and thus, properties of graphene. An alternative approach to surmount these problems is the elimination of the transfer process and to directly grow graphene on dielectric substrates, for future electronic and optical applications. This review presents a comprehensive and an up-to-date account of the development of synthesis methods, challenges and future directions for transfer-free graphene growth on dielectric substrates. Special emphasis is given on the fundamentals of growth mechanisms of various transfer-free graphene synthesis processes on dielectric materials.

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介电基底上无转移石墨烯的生长：生长机理的综述

自从使用机械剥离技术获得石墨烯的历史已超过十年之久以来，这种二维材料因其出色的性能而在各种应用中获得了飞速发展的前景。石墨烯最常通过化学气相沉积法在金属基材上生长，因此需要将其转移到介电基材上，以用于多种光学和电子应用。在这种复杂且昂贵的转移步骤中，缺陷被引入到石墨烯中，这降低了石墨烯的质量并因此降低了其性能。解决这些问题的另一种方法是消除转移过程，并在介电基板上直接生长石墨烯，以用于未来的电子和光学应用。这篇综述提供了关于介电基片上无转移石墨烯生长的合成方法的发展，挑战和未来方向的全面而最新的描述。特别强调了介电材料上各种无转移石墨烯合成工艺的生长机理的基本原理。