The crystallization of amorphous complex oxides via solid phase epitaxy enables a wide range of opportunities in the formation of oxide materials in new geometries and with previously inaccessible compositions. Emerging methods for controlling crystallization from the amorphous form arise from recent advances in the deposition of amorphous oxides, the formation and placement of crystalline seeds, and have built on an expanded understanding of the kinetics of nucleation and crystal growth. Key discoveries include methods for the creation of epitaxial layers in perovskite, spinel, and pyrochlore complex oxides. The creation of nanoscale homoepitaxial and heteroepitaxial seeds has the potential to enable new directions in the integration of complex oxides with semiconductors and in devices based on oxygen ion transport. Future opportunities include the creation of complex oxides in morphologies and compositions exhibiting electronic, thermal, and magnetic phenomena enabling a variety of applications.

通过固相外延使非晶态复合氧化物结晶，可以在形成具有新几何形状和以前难以获得的成分的氧化物材料时提供广泛的机会。从无定形形式控制结晶的新兴方法来自无定形氧化物沉积，结晶种子的形成和放置的​​最新进展，并且建立在对成核动力学和晶体生长的扩展理解上。关键发现包括在钙钛矿，尖晶石和烧绿石复合氧化物中创建外延层的方法。纳米级同质外延和异质外延晶种的产生具有潜力，可以在复杂氧化物与半导体的集成以及基于氧离子传输的器件中实现新的方向。