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The formation of perovskite multiple quantum well structures for high performance light-emitting diodes
npj Flexible Electronics ( IF 14.6 ) Pub Date : 2018-04-23 , DOI: 10.1038/s41528-018-0026-0
Yan Sun , Li Zhang , Nana Wang , Shuting Zhang , Yu Cao , Yanfeng Miao , Mengmeng Xu , Hao Zhang , Hai Li , Chang Yi , Jianpu Wang , Wei Huang

Recent works showed that high efficient perovskite light-emitting diodes can be achieved from solution-processed, self-organized multiple quantum wells (MQWs) with an energy cascade. We investigate how the mixing of QWs with different band gaps can affect the perovskite LED device performance. We find that the annealing process can significantly affect the constitution of the MQWs films, where the dominant phase can evolve from large band gap QWs to small band gap QWs. The optimal constitution for LED application lies in a transition point of small-n QWs dominant phase to large-n QWs dominant phase, when the MQW film presents highest photoluminescence while still remains uniform film morphology.



中文翻译:

高性能发光二极管钙钛矿多量子阱结构的形成

最近的工作表明,通过具有能量级联的固溶自组织多量子阱(MQW),可以实现高效钙钛矿发光二极管。我们研究了具有不同带隙的QW的混合如何影响钙钛矿LED器件的性能。我们发现,退火过程会显着影响MQWs薄膜的结构,其中主导相可以从大带隙QWs演化到小带隙QWs。当MQW薄膜呈现出最高的光致发光性能,同时仍保持均匀的薄膜形态时,LED应用的最佳结构在于小n QWs主相到大n QWs主相的过渡点。

更新日期:2018-04-23
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