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Combining scanning tunneling microscope (STM) imaging and local manipulation to probe the high dose oxidation structure of the Si(111)-7×7 surface
Nano Research ( IF 9.9 ) Pub Date : 2020-01-02 , DOI: 10.1007/s12274-019-2587-1
Dogan Kaya , Richard J. Cobley , Richard E. Palmer

Understanding the atomistic formation of oxide layers on semiconductors is important for thin film fabrication, scaling down conventional devices and for the integration of emerging research materials. Here, the initial oxidation of Si(111) is studied using the scanning tunneling microscope. Prior to the complete saturation of the silicon surface with oxygen, we are able to probe the atomic nature of the oxide layer formation. We establish the threshold for local manipulation of inserted oxygen sites to be +3.8 V. Only by combining imaging with local atomic manipulation are we able to determine whether inserted oxygen exists beneath surface-bonded oxygen sites and differentiate between sites that have one and more than one oxygen atom inserted beneath the surface. Prior to the creation of the thin oxide film we observe a flip in the manipulation rates of inserted oxygen sites consistent with more oxygen inserting beneath the silicon surface.

中文翻译:

结合扫描隧道显微镜(STM)成像和局部操作来探测Si(111)-7×7表面的高剂量氧化结构

了解半导体上氧化物层的原子形成对于薄膜制造,缩小常规器件规模以及整合新兴研究材料非常重要。在这里,使用扫描隧道显微镜研究了Si(111)的初始氧化。在硅表面被氧完全饱和之前,我们能够探究氧化物层形成的原子性质。我们将插入的氧位点的本地操作阈值设置为+3.8V。只有通过将成像与局部原子操作相结合,我们才能确定插入的氧是否存在于表面键合的氧位点下方,并区分具有一个或多个氧的位点。在表面下插入一个氧原子。
更新日期:2020-01-02
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