This work refers to the synthesis and characterization of new (2E, 4Z)-5, 7-diphenylhepta-2, 4-dien-6-ynoic acids. We describe the nucleophilic addition of bis(trimethylsylil)ketene acetals (TMS) to aryl ynones substituted by halogen groups activated by boron trifluoride diethyl etherate (BF_3·Et₂O) for the stereoselective synthesis of dienynoic acid. The molecular materials were structurally characterized by IR spectroscopy, NMR spectroscopy and X-ray diffraction. After the characterization the synthesized acids were doped with indium(III) phthalocyanine chloride (In(III)PcCl) in order to generate a organic semiconductor that was characterized by UV–Vis spectroscopy to subsequently obtain their optical bandgap (Eg) values. The Eg value was compared to that obtained for the pure state dienynoic acids in order to evaluate the doping effect with the In(III)PcCl. The Eg diminished from values near 2.6 eV obtained for pure compounds to values around 1.4 eV for the same compounds, but now with doping. With the molecular semiconductors obtained were manufactured structures of disperse heterojunction which later were evaluated in their electric behavior. A behaviour ohmic at low voltages and Space Charge Limited Current (SCLC) at higher voltages was observe from the study J(V) carried out.

中文翻译：

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包含（2E，4Z）-5，7-二苯基庚二-2，4-二烯-6-壬酸的新型分子半导体的合成，掺杂和表征

这项工作是指新的（2E，4Z）-5，7-diphenylhepta-2，4-dien-6-ynoic酸的合成和表征。我们描述了双（三甲基甲硅烷基）乙烯酮缩醛（TMS）亲核加成到被三氟化硼二乙醚（BF _3· Et _2）激活的卤素取代的芳基炔酮上O）用于二烯酸的立体选择性合成。通过IR光谱，NMR光谱和X射线衍射对分子材料进行结构表征。表征后，将合成的酸掺入铟（III）酞菁氯化物（In（III）PcCl），以生成通过紫外-可见光谱表征的有机半导体，随后获得其光学带隙（Eg）值。将Eg值与纯状态二烯酸的Eg值进行比较，以评估In（III）PcCl的掺杂效果。Eg从纯化合物获得的接近2.6 eV的值减小到相同化合物获得的1.4 eV左右的值，但是现在有了掺杂。用获得的分子半导体制造了分散异质结的结构，随后对其电性能进行了评估。从研究中观察到低电压下的行为为欧姆，高电压下的空间电荷限制电流（SCLC）执行J（V）。