Abstract High-quality magnesia-doped lithium niobate (LN: MgO) films were deposited by radio-frequency magnetron sputtering. The deposited films were characterized for their structural, surface morphology and elemental atomic percentages by X-ray diffraction, Raman spectra, scanning electron microscopy and energy dispersive spectroscopy, respectively. The results show that the LN: MgO films without impurities phase has a preferred orientation of (012) plan. The optical properties of LN: MgO films were studied systematically. It reveals that the average transmittance of LN: MgO film is related to the atomic percentage of Mg element and the maximum of that is 89% when the atomic percentage of Mg element is 0.8%. The optical band gap can be adjusted from 3.85 eV to 4.04 eV by changing deposition conditions to control the grain size of the films. Moreover, the optical damage threshold of LN: MgO films was investigated and the value of that was as high as 4.68 × 104 W/cm2. These characteristics of LN: MgO films may provide promising applications in the fabrication of novel optoelectronic devices.

中文翻译：

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掺杂Mg对射频磁控溅射制备LiNbO3薄膜结构和光学性能的影响

摘要 通过射频磁控溅射沉积了高质量的掺杂氧化镁的铌酸锂 (LN: MgO) 薄膜。沉积薄膜的结构、表面形貌和元素原子百分比分别通过 X 射线衍射、拉曼光谱、扫描电子显微镜和能量色散光谱进行表征。结果表明，无杂质相的LN:MgO薄膜具有(012)平面的择优取向。系统地研究了LN:MgO薄膜的光学性能。结果表明,LN:MgO薄膜的平均透光率与Mg元素的原子百分比有关,当Mg元素的原子百分比为0.8%时,最高可达89%。通过改变沉积条件来控制薄膜的晶粒尺寸，可以将光学带隙从 3.85 eV 调整到 4.04 eV。此外，研究了 LN: MgO 薄膜的光学损伤阈值，该值高达 4.68 × 104 W/cm2。LN: MgO 薄膜的这些特性可以在新型光电器件的制造中提供有前景的应用。