TiO₂:ZnO nanorods thin film has the great properties of packed ZnO nanorods with good crystallinity and improved UV absorption properties which are suitable for optoelectronic device applications. ZnO nanorods array was fabricated by using a seeding method with TiO₂ as seed layer. As a result, well aligned of ZnO rods with good distribution can grow. Different samples of TiO₂, ZnO and TiO₂:ZnO nanorods thin film were used as based material in UV sensor devices. The responsivities of the sensors are 1.70 × 10⁻¹A/W, 7.76 × 10⁻⁵ A/W and 2.22 × 10⁻⁷ A/W for TiO₂:ZnO nanorods, TiO₂ seed layer and ZnO rods based UV sensors respectively. Results indicate that the TiO₂:ZnO nanorods UV sensor exhibits rapid and high response to UV light compared with TiO₂ and ZnO sensor because of its small size of nanorods and seed layer acting as an absorbance assisted and capacitive layer on the glass surface.

TiO ₂：ZnO纳米棒薄膜具有良好的填充性，良好的结晶性和改善的UV吸收特性，适合于光电器件应用。ZnO纳米棒阵列是通过以TiO ₂为种子层的种晶方法制备的。结果，可以生长具有良好分布的ZnO棒的良好排列。TiO ₂，ZnO和TiO ₂：ZnO纳米棒薄膜的不同样品被用作UV传感器设备中的基础材料。传感器的响应度对于TiO ₂：ZnO纳米棒，TiO ₂为1.70×10 ^-1 A / W，7.76×10 ^-5 A / W和2.22×10 ^-7 A / W种子层和ZnO棒分别基于紫外线传感器。结果表明，与TiO ₂和ZnO传感器相比，TiO ₂：ZnO纳米棒UV传感器表现出对紫外线的快速和高响应，这是因为其纳米棒的尺寸较小，并且晶种层充当玻璃表面上的吸收辅助和电容层。