One of the most prospective electrical and optical nonvolatile memory types is the phase change memory based on chalcogenide materials, particularly Ge2Sb2Te5. Introduction of dopants is an effective method for the purposeful change of Ge2Sb2Te5 thin film properties. In this work, we used the ion implantation method for the introduction of In and Sn into Ge2Sb2Te5 thin films by a Multipurpose Test Bench (MTB) at the National Research Center "Kurchatov Institute"-Institute for Theoretical and Experimental Physics. For Sn and In ion implantation into Ge2Sb2Te5, the following MTB elements were used: a vacuum arc ion source, an electrostatic focusing system, and a system for current and beam profile measurements. The MTB parameters for Sn and In ion implantation and its effect on the material properties are presented. Implanted Ge2Sb2Te5 thin films were irradiated by femtosecond laser pulses. It was shown that the ion implantation resulted in a decrease in the threshold laser fluence necessary for crystallization compared to the undoped Ge2Sb2Te5.

中文翻译：

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用于铟锡离子注入相变存储器薄膜的真空电弧离子源

最有前景的电和光非易失性存储器类型之一是基于硫属化物材料，特别是 Ge2Sb2Te5 的相变存储器。掺杂剂的引入是有目的地改变 Ge2Sb2Te5 薄膜性能的有效方法。在这项工作中，我们使用离子注入方法通过位于国家研究中心“库尔恰托夫研究所”-理论和实验物理研究所的多用途测试台 (MTB) 将 In 和 Sn 引入 Ge2Sb2Te5 薄膜。对于将 Sn 和 In 离子注入 Ge2Sb2Te5 中，使用了以下 MTB 元件：真空电弧离子源、静电聚焦系统以及用于电流和光束轮廓测量的系统。介绍了 Sn 和 In 离子注入的 MTB 参数及其对材料特性的影响。植入的 Ge2Sb2Te5 薄膜被飞秒激光脉冲照射。结果表明，与未掺杂的 Ge2Sb2Te5 相比，离子注入导致结晶所需的阈值激光能量密度降低。