This paper reports on the demonstration of ultrafast (thermal time constant, τ ∼ 166 μs) and high resolution (noise equivalent power, NEP ∼ 549 pW/Hz1/2) thermal detectors based on high quality factor 50-nm thick aluminum nitride (AlN) piezoelectric resonant nanoplates. Here we show that by employing nanoscale (30 nm) aluminum anchors, both high thermal resistance (Rth ∼ 1.1 × 106 K/W) and high quality factor (Q ∼ 1000) can be achieved in greatly scaled AlN nanoplate resonators. Furthermore, the absorptance of such ultrathin AlN resonators was characterized, in mid-wavelength infrared region showing an average absorptance of ∼36% from 2.75 μm to 6.25 μm. These unique features were exploited for the experimental demonstration of AlN NEMS resonant thermal detectors with greatly reduced thermal capacitance and over doubled figure of merit [FoM = 1/(NEP × τ)] compared to what was previously achieved by the same technology.This paper reports on the demonstration of ultrafast (thermal time constant, τ ∼ 166 μs) and high resolution (noise equivalent power, NEP ∼ 549 pW/Hz1/2) thermal detectors based on high quality factor 50-nm thick aluminum nitride (AlN) piezoelectric resonant nanoplates. Here we show that by employing nanoscale (30 nm) aluminum anchors, both high thermal resistance (Rth ∼ 1.1 × 106 K/W) and high quality factor (Q ∼ 1000) can be achieved in greatly scaled AlN nanoplate resonators. Furthermore, the absorptance of such ultrathin AlN resonators was characterized, in mid-wavelength infrared region showing an average absorptance of ∼36% from 2.75 μm to 6.25 μm. These unique features were exploited for the experimental demonstration of AlN NEMS resonant thermal detectors with greatly reduced thermal capacitance and over doubled figure of merit [FoM = 1/(NEP × τ)] compared to what was previously achieved by the same technology.

中文翻译：

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基于 50 nm 厚 AlN 纳米板谐振器的高品质因数 NEMS 热探测器

本文报告了基于高品质因数 50 纳米厚氮化铝 (AlN) 的超快（热时间常数，τ ∼ 166 μs）和高分辨率（噪声等效功率，NEP ∼ 549 pW/Hz1/2）热探测器的演示) 压电谐振纳米板。在这里，我们表明，通过采用纳米级 (30 nm) 铝锚，可以在大尺寸的 AlN 纳米板谐振器中实现高热阻 (Rth ∼ 1.1 × 106 K/W) 和高品质因数 (Q ∼ 1000)。此外，这种超薄 AlN 谐振器的吸收率被表征，在中波长红外区域显示从 2.75 μm 到 6.25 μm 的平均吸收率约为 36%。这些独特的特性被用于 AlN NEMS 谐振热探测器的实验演示，与之前通过相同技术实现的相比，该探测器具有大大降低的热容和两倍以上的品质因数 [FoM = 1/(NEP × τ)]。 本文基于高品质因数 50 纳米厚氮化铝 (AlN) 压电陶瓷的超快（热时间常数，τ ∼ 166 μs）和高分辨率（噪声等效功率，NEP ∼ 549 pW/Hz1/2）热探测器的演示报告共振纳米片。在这里，我们表明，通过采用纳米级 (30 nm) 铝锚，可以在大尺寸的 AlN 纳米板谐振器中实现高热阻 (Rth ∼ 1.1 × 106 K/W) 和高品质因数 (Q ∼ 1000)。此外，这种超薄 AlN 谐振器的吸收率被表征，在中波长红外区域，从 2.75 μm 到 6.25 μm，平均吸收率为 36%。这些独特的特性被用于 AlN NEMS 谐振热探测器的实验演示，与之前通过相同技术实现的相比，该探测器具有大大降低的热容和两倍以上的品质因数 [FoM = 1/(NEP × τ)]。