We report on light-activated electroforming of ZnO/p-Si heterojunction memristors with transparent indium tin oxide as the top electrode. Light-generated electron-hole pairs in the p-type substrate are separated by the external electric field and electrons are injected into the active ZnO layer. The additional application of voltage pulses allows achieving different resistance states that end up in the realization of the low resistance state (LRS). This process requires much less voltage compared to dark conditions, thus avoiding undesired current overshoots and achieving a self-compliant device. The transport mechanisms governing each resistance state are studied and discussed. An evolution from an electrode-limited to a space charge-limited transport is observed along the electroforming process before reaching the LRS, which is ascribed to the progressive formation of conductive paths that consequently induce the growth of conductive nanofilaments through the ZnO layer.

中文翻译：

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ITO/ZnO/p-Si 电阻开关器件中的光激活电铸

我们报告了以透明氧化铟锡作为顶部电极的 ZnO/p-Si 异质结忆阻器的光活化电铸。p 型衬底中的光生电子-空穴对被外部电场分离，电子被注入到活性 ZnO 层中。电压脉冲的额外应用允许实现最终实现低电阻状态 (LRS) 的不同电阻状态。与黑暗条件相比，此过程需要更少的电压，从而避免不希望的电流过冲并实现自兼容设备。研究和讨论了控制每个抗性状态的运输机制。在到达 LRS 之前，沿着电铸过程观察到从电极限制到空间电荷限制传输的演变，