Diluted magnetic semiconductors (DMSs) have numerous potential applications, particularly in spintronics. Therefore, the search for advanced DMSs has been a critical task for a long time. In this work, room-temperature ferromagnetism is observed in the C +-implanted AlN films with C + doses of 5 × 10 16 ( AlN : C 5 × 10 16) and 2 × 10 17 cm − 2 ( AlN : C 2 × 10 17). AlN : C 2 × 10 17 exhibits a saturation magnetization of ∼0.104 emu/g, nearly 1.5 times that of AlN : C 5 × 10 16. X-ray diffraction and X-ray photoelectron spectroscopy (XPS) measurements reveal that the implanted C + ions occupy the interstitial lattice sites and substitute at the sites of Al atoms. XPS and Doppler broadening of positron annihilation radiation measurements demonstrate the existence of the Al-vacancy related defects in the C +-implanted AlN films. First-principles calculations indicate that the ferromagnetism in AlN : C 5 × 10 16 and AlN : C 2 × 10 17 is mainly originated from defect complexes involving interstitial C atoms and Al vacancies, which have the lowest formation energy among AlN:C defects containing C atoms and Al vacancies. This work provides a feasible route to develop advanced DMSs.

中文翻译：

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C + 注入的 AlN 薄膜中的室温铁磁性

稀释的磁性半导体（DMS）具有许多潜在的应用，特别是在自旋电子学中。因此，长期以来，寻找先进的 DMS 一直是一项关键任务。在这项工作中，在 C + 注入的 AlN 薄膜中观察到室温铁磁性，C + 剂量为 5 × 10 16 ( AlN : C 5 × 10 16) 和 2 × 10 17 cm - 2 ( AlN : C 2 × 10 17)。AlN : C 2 × 10 17 的饱和磁化强度约为 0.104 emu/g，几乎是 AlN : C 5 × 10 16 的 1.5 倍。 X 射线衍射和 X 射线光电子能谱 (XPS) 测量表明注入的 C + 离子占据间隙晶格位置并取代铝原子的位置。XPS 和正电子湮没辐射测量的多普勒展宽证明 C + 注入的 AlN 薄膜中存在与铝空位相关的缺陷。第一性原理计算表明，AlN : C 5 × 10 16 和AlN : C 2 × 10 17 中的铁磁性主要来源于包含间隙C原子和Al空位的缺陷复合物，它们在含有AlN:C缺陷的缺陷中具有最低的形成能。 C原子和Al空位。这项工作为开发先进的 DMS 提供了可行的途径。