This work focuses on the extraction of the open circuit voltage (VOC) on photovoltaic nanowires by surface photovoltage (SPV) based on Kelvin probe force microscopy (KPFM) measurements. In a first approach, P-I-N radial junction (RJ) silicon nanowire (SiNW) devices were investigated under illumination by KPFM and current-voltage (I-V) analysis. Within 5%, the extracted SPV correlates well with the VOC. In a second approach, local SPV measurements were applied on single isolated radial junction SiNWs pointing out shadowing effects from the AFM tip that can strongly impact the SPV assessment. Several strategies in terms of AFM tip shape and illumination orientation have been put in place to minimize this effect. Local SPV measurements on isolated radial junction SiNWs increase logarithmically with the illumination power and demonstrate a linear behavior with the VOC. The results show notably that contactless measurements of the VOC become feasible at the scale of single photovoltaic SiNW devices.

中文翻译：

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通过开尔文探针力显微镜在PIN径向结Si纳米线上应用的本地VOC测量。

这项工作的重点是通过基于开尔文探针力显微镜（KPFM）测量的表面光电压（SPV）提取光伏纳米线上的开路电压（VOC）。在第一种方法中，在KPFM和电流-电压（IV）分析的照明下研究了PIN径向结（RJ）硅纳米线（SiNW）器件。在5％以内，提取的SPV与VOC的相关性很好。在第二种方法中，将局部SPV测量应用于单个隔离的径向结点SiNW，指出可能会严重影响SPV评估的AFM尖端的阴影效应。就AFM尖端形状和照明方向而言，已经采取了几种策略来最大程度地减少这种影响。隔离的径向结SiNW上的局部SPV测量随照明功率成对数增加，并且与VOC呈线性关系。结果显着表明，在单个光伏SiNW器件的规模上，VOC的非接触式测量变得可行。