In addition to being grown on industry-standard orientation, vertical [100] oriented nanowires present novel families of facets and related cross-sectional shapes. These nanowires are engineered to achieve a number of facet combinations and cross-sectional shapes, by varying their growth parameters within ranges that facilitate vertical growth. In situ post-growth annealing technique is used to realise other combinations that are unattainable solely using growth parameters. Two examples of possible novel radial heterostructures grown on these vertical [100] oriented nanowire facets are presented, demonstrating their potential in future applications.

中文翻译：

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为新型径向异质结构设计垂直[100]取向的InP纳米线的侧面。

除了以行业标准的取向生长之外，垂直[100]取向的纳米线还具有新颖的刻面族和相关的横截面形状。通过在有利于垂直生长的范围内改变其生长参数，可以对这些纳米线进行改造，以实现许多小平面组合和横截面形状。原位后生长退火技术用于实现仅使用生长参数无法实现的其他组合。给出了在这些垂直[100]取向的纳米线刻面上生长的可能的新颖径向异质结构的两个示例，证明了它们在未来应用中的潜力。