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Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single dislocation sensitivity via noise reduction
Ultramicroscopy ( IF 2.2 ) Pub Date : 2020-03-01 , DOI: 10.1016/j.ultramic.2019.112927
T J Ruggles 1 , Y S J Yoo 2 , B E Dunlap 3 , M A Crimp 3 , J Kacher 2
Affiliation  

High resolution electron backscatter diffraction (HREBSD), an SEM-based diffraction technique, may be used to measure the lattice distortion of a crystalline material and to infer the geometrically necessary dislocation content. Uncertainty in the image correlation process used to compare diffraction patterns leads to an uneven distribution of measurement noise in terms of the lattice distortion, which results in erroneous identification of dislocation type and density. This work presents a method of reducing noise in HREBSD dislocation measurements by removing the effect of the most problematic components of the measured distortion. The method is then validated by comparing with TEM analysis of dislocation pile-ups near a twin boundary in austenitic stainless steel and with ECCI analysis near a nano-indentation on a tantalum oligocrystal. The HREBSD dislocation microscopy technique is able to resolve individual dislocations visible in TEM and ECCI and correctly identify their Burgers vectors.

中文翻译:

将高分辨率 EBSD 的结果与基于 TEM 和 ECCI 的位错显微镜相关联:通过降噪接近单位错灵敏度

高分辨率电子背散射衍射 (HREBSD) 是一种基于 SEM 的衍射技术,可用于测量晶体材料的晶格畸变并推断几何上必要的位错含量。用于比较衍射图案的图像相关过程的不确定性会导致晶格畸变方面的测量噪声分布不均匀,从而导致位错类型和密度的错误识别。这项工作提出了一种通过消除测量失真中最有问题的分量的影响来降低 HREBSD 位错测量中的噪声的方法。然后通过比较奥氏体不锈钢双边界附近位错堆积的 TEM 分析和钽寡晶上纳米压痕附近的 ECCI 分析来验证该方法。
更新日期:2020-03-01
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