Nonvolatile resistive random access memory (RRAM) has demonstrated great potential for in-memory computing systems with greatly enhanced computation capability. By using BP-DDAT (DDAT: S-1-dodecyl-S′-(α,α′-dimethyl-α′′-aceticacid)trithiocarbonate) as a reversible addition and fragmentation chain transfer (RAFT) agent, a novel polyacrylonitrile covalently modified black phosphorus (BP) derivative (BP–PAN) has been successfully synthesized. The formation of a P–C bond between phosphorus and an aryl group bonded to the PAN polymer has been confirmed by XPS and FTIR measurements. The environmental stability of BP nanosheets is greatly improved by covalent functionalization with PAN. The as-fabricated Al/BP–PAN/ITO device shows very good nonvolatile rewritable RRAM performance with high ON/OFF current ratio exceeding 10⁴, whereas the thermally annealed BP–PAN (i.e., pyro-BP–PAN)-based device did not display any information storage effect under the same measurement conditions. Pyrolytic modification of PAN leads to the formation of conjugated chain molecules by linking of nitrile groups, which decreased the electron-withdrawing capability of PAN in the structure of BP–PAN, thereby losing the switching and memory performance.

中文翻译：

---

聚丙烯腈共价改性的溶液可加工黑磷纳米片，用于非易失性电阻式随机存取存储器†

非易失性电阻式随机存取存储器（RRAM）在内存计算系统中展示了巨大的潜力，具有大大增强的计算能力。通过使用BP-DDAT（DDAT：S -1- dodecyl- S′-（α，α′-二甲基-α′′-乙酸）三硫代碳酸酯作为可逆加成和断裂链转移（RAFT）剂，已成功地制备了一种新型的聚丙烯腈共价改性黑磷（BP）衍生物（BP-PAN）合成的。通过XPS和FTIR测量已经证实，磷与连接到PAN聚合物的芳基之间形成了一个P–C键。通过使用PAN共价官能化，BP纳米片的环境稳定性大大提高。制成的Al / BP-PAN / ITO器件显示出非常好的非易失性可重写RRAM性能，且高ON / OFF电流比超过10 ⁴，而经过热退火的BP-PAN（即，基于pyro-BP–PAN）的设备在相同的测量条件下不会显示任何信息存储效果。PAN的热解改性通过腈基的连接导致共轭链分子的形成，这降低了BP-PAN结构中PAN的吸电子能力，从而失去了开关和记忆性能。