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Vertically aligned carbon nanotube arrays growth modeling at different temperatures and pressures in reactor
Diamond and Related Materials ( IF 4.1 ) Pub Date : 2020-03-01 , DOI: 10.1016/j.diamond.2019.107665
Sergey V. Bulyarskiy , George G. Gusarov , Aleksandr V. Lakalin , Mikhail S. Molodenskiy , Aleksandr A. Pavlov , Roman M. Ryazanov

Abstract A model for the growth of carbon nanotubes was developed and the calculations for this model were compared with experiment. Experimental growth of carbon nanotubes arrays was carried out by the CVD method in a stream of acetylene, ammonia and argon at temperatures from 550 to 950 °C. A nickel film of 4 nm thickness on the surface of titanium nitride was used as a catalyst. The model takes into account the pyrolysis of hydrocarbons on the surface of the catalyst nanoparticles, the formation of a barrier layer on its surface, which slows down and stops the growth of the nanotube array, the interaction of the substance of the buffer layer with carbon in the catalyst nanoparticle. When developing the model, the mechanisms of individual processes were considered and the temperature dependences of the kinetic coefficients, which describe the growth of nanotubes, were obtained. It is these dependences that show a good agreement between the calculations and the experiment.

中文翻译:

反应器中不同温度和压力下垂直排列的碳纳米管阵列生长建模

摘要 建立了碳纳米管生长的模型,并将该模型的计算与实验进行了比较。碳纳米管阵列的实验生长是通过 CVD 方法在乙炔、氨和氩气流中在 550 至 950 °C 的温度下进行的。氮化钛表面4nm厚的镍膜用作催化剂。该模型考虑了催化剂纳米粒子表面碳氢化合物的热解,在其表面形成阻挡层,这会减慢和阻止纳米管阵列的生长,缓冲层的物质与碳的相互作用在催化剂纳米颗粒中。在开发模型时,考虑了各个过程的机制以及动力学系数的温度依赖性,获得了描述纳米管生长的文献。正是这些相关性显示了计算和实验之间的良好一致性。
更新日期:2020-03-01
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