Journal of Luminescence ( IF 3.280 ) Pub Date : 2019-12-28 , DOI: 10.1016/j.jlumin.2019.117014
Xingjun Luo, Weidong Song, Hu Wang, Yiming Sun, Bolin Zhang, Linyuan Wang, Jiaqi Guo, Longfei He, Kang Zhang, Shuti Li

GaN nano/micro-structure based light-emitting diodes (LEDs) have drawn much attention owing to their potential applications in display and optoelectronics integration. Here, we have fabricated coaxial semipolar InGaN/GaN multiple quantum wells (MQWs) microwire array LED with superior performances in suppressing efficiency droop. The results show that our as-synthesized microwire has two semipolar planes ($\stackrel{‾}{1}$101) and (1$\stackrel{‾}{1}$01), and the InGaN/GaN MQWs have superior crystal quality. In addition, the efficiency droop ratio of our device is about 9.7% as the injected current increases from 3 to 100 A/cm2, which is largely declined by 47% compared with that of the conventional polar c-plane LEDs. Meanwhile, the microwire array LED reveals a small wavelength shift (3 nm) as the injected current increases from 3 to 23 A/cm2. The effective advances in the device should be attributed to the weaker quantum-confined stark effect of InGaN/GaN MQWs in semipolar plane. This work proposes a high repeatability method to fabricate microwire array LED for future optoelectronic integrated systems.

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