To achieve a wide temperature range and a high figure‐of‐merit, segmented assembling is considered as the most effective method based on optimized low‐temperature and medium‐temperature thermoelectric materials. In this work, divalent magnesium (Mg) as acceptor doping in both Bi_0.5Sb_1.5Te₃ and indium (In) alloyed Sb₂Te₃ play an important role in improving thermoelectric performance, including enhanced power factor by balancing the electrical conductivity and Seebeck coefficient, reduced bipolar thermal conductivity by delaying occurrence of intrinsic excitation, and reduced lattice thermal conductivity due to point defects. Finally, both the figure‐of‐merit (ZT) value and the corresponding operating temperature range are improved. Typically, Mg_0.01Bi_0.5Sb_1.49Te₃ with a ZT_ave of 1.16 from 300 to 520 K and a ZT_ave of 0.84 for Mg_0.02In_0.1Sb_1.88Te₃ from 500 to 680 K are obtained. To further obtain wide‐temperature high ZT value, p‐type Mg_0.01Bi_0.5Sb_1.49Te₃/Mg_0.02In_0.1Sb_1.88Te₃ segmented leg with excellent interface bonding and extremely low contact resistivity is successfully fabricated by only one‐step sintering process. The corresponding average ZT value is up to 1.02 with a broad temperature range from 300 to 680 K, and a maximum theoretical conversion efficiency of 12.7% with a temperature difference of 380 K is obtained. This provides guidelines for high efficiency thermoelectric devices.

中文翻译：

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通过一步烧结实现宽温度范围的基于Sb2Te3的分段腿出色的热电性能

为了实现宽温度范围和高品质因数，基于优化的低温和中温热电材料，分段组装被认为是最有效的方法。在这项工作中，Bi _0.5 Sb _1.5 Te ₃和铟（In）合金化Sb ₂ Te ₃中的二价镁（Mg）作为受体掺杂在改善热电性能方面起着重要作用，包括通过平衡电导率和塞贝克来提高功率因数。系数，通过延迟固有激发的发生而降低的双极导热率，以及由于点缺陷而导致的晶格导热率降低。最后，两个品质因数（ZT）值和相应的工作温度范围得到改善。通常，获得Mg _0.01 Bi _0.5 Sb _1.49 Te ₃，其中Mg _0.02 In _0.1 Sb _1.88 Te ₃的ZT _ave为300至520 K，ZT _ave为1.16，ZT _ave为0.84 。为了进一步获得宽温度下的高ZT值，p型Mg _0.01 Bi _0.5 Sb _1.49 Te ₃ / Mg _0.02 In _0.1 Sb _1.88 Te ₃仅一步烧结就能成功制造出具有出色的界面粘合性和极低的接触电阻率的分段式支脚。在300至680 K的宽温度范围内，相应的平均ZT值最高为1.02，在380 K的温差下，最大理论转化效率为12.7％。这为高效热电设备提供了指导。