Abstract Anisotropic mechanical strain as low as 0.1% modifies the electronic response of crystalline semiconductor-based devices and in particular affects the performance of solar cells. We measure the dark current-voltage characteristic of silicon heterojunction solar cells under different levels of tensile uniaxial stress and observe a reversible change of the j-V curve with applied strain. Using a two-exponential description of the j-V characteristic to fit our experimental data, we obtain the strain dependence of the diffusion saturation current and find a decrease of about 3% for a tensile strain level of 6.7 × 10 - 4 . We compare these experiments to a theoretical model that accounts for the effect of strain on the band energy levels, densities of states and mobilities of carriers. The theoretical estimation of the change in saturation current is found to be in reasonable agreement with experimental results.

中文翻译：

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应变对硅异质结太阳能电池暗电流-电压特性的影响

摘要 低至 0.1% 的各向异性机械应变会改变基于晶体半导体的器件的电子响应，特别是影响太阳能电池的性能。我们测量了不同水平拉伸单轴应力下硅异质结太阳能电池的暗电流 - 电压特性，并观察了 jV 曲线随外加应变的可逆变化。使用 jV 特性的双指数描述来拟合我们的实验数据，我们获得了扩散饱和电流的应变依赖性，并发现拉伸应变水平为 6.7 × 10 - 4 时降低了约 3%。我们将这些实验与解释应变对能带能级、状态密度和载流子迁移率影响的理论模型进行比较。