High-performance and flexible electrically conductive materials with satisfactory mechanical strength are vital in shielding electromagnetic interference (EMI) and radiation for portable electronics and wearable devices. Two-dimensional transition metal carbides/nitrides (MXenes) with remarkable metallic conductivity are considered as ideal candidates for ultrathin EMI shielding films, but their poor mechanical performances often impede their practical applications. Herein, we fabricate highly conductive MXene-based films with remarkable EMI shielding performance and excellent mechanical strength by enhancing the interfacial adhesion among the adjacent MXene nanosheets with multivalent aluminum ions. The tensile strength of the MXene film is significantly enhanced by 190% from 28.7 to 83.2 MPa with the introduction of aluminum ions and its conductivity is retained at 265 600 S m⁻¹, exhibiting superior comprehensive performances to the previously reported results with other reinforcements. The strong and highly conductive MXene film with a small thickness of 39 μm exhibits one of the highest EMI shielding performances of over 80 dB in the X-band. This work provides a simple and efficient strategy for designing and fabricating high-performance MXene-based materials for efficient EMI shielding applications.

中文翻译：

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导电铝离子增强MXene膜可有效屏蔽电磁干扰

具有令人满意的机械强度的高性能和柔性导电材料对于屏蔽便携式电子设备和可穿戴设备的电磁干扰（EMI）和辐射至关重要。具有出色金属导电性的二维过渡金属碳化物/氮化物（MXenes）被认为是超薄EMI屏蔽膜的理想选择，但其较差的机械性能通常会阻碍其实际应用。本文中，我们通过增强相邻的多价铝离子与MXene纳米片之间的界面粘合力，制造了具有出色的EMI屏蔽性能和出色的机械强度的高导电MXene基薄膜。MXene膜的拉伸强度从28.7显着提高到83，提高了190％。^-1，与其他增强材料相比，具有优于先前报告的综合性能。坚固且高度导电的MXene膜厚度仅为39μm，在X波段中显示出超过80 dB的最高EMI屏蔽性能之一。这项工作为设计和制造用于高效EMI屏蔽应用的高性能MXene基材料提供了一种简单有效的策略。