Abstract In this study, CuSbSe2 chalcostibite thin films were deposited on glass substrates held at different temperatures using e-beam evaporation from the pre-synthesized CuSbSe2 bulk source material. Bulk CuSbSe2 source compound was synthesized by mechanical ball milling of constituent elements. Substrate temperature and growth condition were optimized to obtain the near stoichiometric chalcostibite thin films. Structural, morphological and optical properties of the synthesized thin films were investigated using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), dynamic force microscopy (DFM), UV–vis–NIR spectroscopy and Raman spectroscopy. Positive value of the measured hall coefficient indicated the p-type nature of CuSbSe2 thin films having a carrier concentration of 5.6 × 1015 cm−3. The thin films were found to have a direct optical band gap (Eg) value of ~1.2 eV and absorption coefficient greater than 104 cm−1.

中文翻译：

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生长温度在通过电子束蒸发的光伏吸收器 CuSbSe2 沉积中的作用

摘要 在这项研究中，CuSbSe2 辉铜矿薄膜沉积在保持在不同温度的玻璃基板上，使用电子束蒸发从预先合成的 CuSbSe2 块状源材料中蒸发。通过对构成元素进行机械球磨来合成块状 CuSbSe2 源化合物。优化基板温度和生长条件以获得接近化学计量的黄铜矿薄膜。使用X射线衍射（XRD）、X射线光电子能谱（XPS）、扫描电子显微镜（SEM）、动态力显微镜（DFM）、UV-vis-NIR研究合成薄膜的结构、形态和光学性质光谱和拉曼光谱。测量的霍尔系数的正值表明载流子浓度为 5.6 × 1015 cm-3 的 CuSbSe2 薄膜的 p 型性质。