The multilayer graphene nanoribbons (MLGNR) by inserting the high-k dielectric material between adjacent graphene nanoribbons (GNR) layers to reduce propagation delay and to expand bandwidth of the conventional pristine (undoped) MLGNR interconnects is presented in this paper. An equivalent distributed circuit model of the proposed MLGNR interconnect with high-k dielectric materials is established to derive the analytical expressions of propagation delay, step response, transfer gain and 3-dB bandwidth for 7.5 nm technology node at global level. The numerical simulation results show that the maximum reduction of propagation delay between the proposed MLGNR by inserting SrTiO₃ dielectric material and the pristine MLGNR can reach 12.746 ns for an interconnect length of 4000 μm. The corresponding 3-dB bandwidth for them can be expanded over 4 times for the interconnect length. It is demonstrated that the proposed MLGNR by inserting the high-k dielectric material can greatly reduce propagation delay and enhance transfer gain and 3-dB bandwidth compared with the conventional pristine MLGNR interconnects. Moreover, it is found that the results obtained by the proposed model have close agreement with Synopsys HSPICE simulation and the maximum relative error for them is less than 5%, and the average efficiency of CPU runtime is improved 95% by using the proposed model, as compared to HSPICE simulation. The proposed design method has many potential applications in improving performance of MLGNR interconnect and providing guidelines for the next generation on-chip interconnect system.

本文介绍了通过在相邻的石墨烯纳米带（GNR）层之间插入高k介电材料来减少传播延迟并扩大常规原始（未掺杂）MLGNR互连的带宽的多层石墨烯纳米带（MLGNR）。建立了所提出的带有高k介电材料的MLGNR互连的等效分布式电路模型，以推导全球水平7.5 nm技术节点的传播延迟，阶跃响应，传输增益和3 dB带宽的解析表达式。数值模拟结果表明，通过插入SrTiO _3可以最大程度减少拟议的MLGNR之间的传播延迟。对于4000μm的互连长度，介电材料和原始MLGNR可以达到12.746 ns。它们的相应3 dB带宽可以扩展4倍以达到互连长度。结果表明，与传统的原始MLGNR互连相比，通过插入高k介电材料而提出的MLGNR可以大大减少传播延迟，并提高传输增益和3-dB带宽。此外，发现所提出的模型所获得的结果与Synopsys HSPICE仿真具有紧密的一致性，并且它们的最大相对误差小于5％，并且使用所提出的模型可以将CPU运行时的平均效率提高95％，与HSPICE仿真相比。