Atomically thin 2D van der Waals semiconductors are promising candidates for next-generation nanoscale field-effect transistors (FETs). Although large-area 2D van der Waals materials have been successfully synthesized, such nanometer-length-scale devices have not been well demonstrated in 2D van der Waals semiconductors. Here, controllable nanometer-scale transistors with a channel length of ≈10 nm are fabricated via vertical channels by squeezing an ultrathin insulating spacer between the out-of-plane source and drain electrodes, and the feasibility of high-density and large-scale fabrication is demonstrated. A large on-current density of ≈70 µA µm-1 nm-1 at a source-drain voltage of 0.5 V and a high on/off ratio of ≈107-109 are obtained in ultrashort 2D vertical channel FETs with monolayer MoS2 synthesized through chemical vapor deposition. The work provides a promising route toward the complementary metal-oxide-semiconductor-compatible fabrication of wafer-scale 2D van der Waals transistors with high-density integration.

中文翻译：

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超短垂直通道范德华半导体晶体管。

原子薄的2D范德华半导体是下一代纳米级场效应晶体管（FET）的有希望的候选者。尽管已经成功地合成了大面积的2D Van der Waals材料，但是在2D van der Waals半导体中尚未很好地证明这种纳米级尺寸的器件。在这里，通过挤压平面外源电极和漏电极之间的超薄绝缘间隔物，通过垂直沟道来制造沟道长度约为10 nm的可控纳米级晶体管，以及高密度和大规模制造的可行性被证明。在通过合成单层MoS2的超短2D垂直沟道FET中，在0.5V的源极-漏极电压下获得了约70 µA µm-1 nm-1的大导通电流密度和107-109的高导通/截止比。化学气相沉积。