Abstract Metamorphic growth of light absorber layers of solar cells introduces misfit dislocations due to strain relaxation, and their influences on the solar cell performance need to be characterized. In this work, we correlate the asymmetry of relaxation probabilities via different glide planes (which results in a tilt of the epilayer) with the open-circuit voltages (Voc) of several metamorphic InGaAs single junction solar cells. The devices contain graded InGaP buffer layers and are grown on a GaAs 001 wafer with a small miscut towards the 100 direction. We observe an inhomogeneous distribution of the solar cells’ Voc within the wafer and are able to correlate the Voc fluctuation to a difference in the asymmetry of the glide plane distributions of α and β dislocations. In the case of solar cells exhibiting a high Voc, the glide planes of both α and β dislocations are controlled by the surface orientation. In the case of low-Voc samples, the glide planes of the β dislocations are controlled by the ordering of InGaP, while those of the α dislocations are still controlled by the surface orientation.

中文翻译：

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在 GaAs 上生长的变质 InGaAs 单结太阳能电池的开路电压与错配位错的优先滑行面之间的相关性

摘要 太阳能电池光吸收层的变质生长由于应变松弛而引入了错配位错，需要表征其对太阳能电池性能的影响。在这项工作中，我们将通过不同滑动面（导致外延层倾斜）的弛豫概率的不对称性与几个变质 InGaAs 单结太阳能电池的开路电压 (Voc) 相关联。这些器件包含渐变的 InGaP 缓冲层，并在 GaAs 001 晶片上生长，朝 100 方向有一个小的错切。我们观察到太阳能电池在晶片内的 Voc 分布不均匀，并且能够将 Voc 波动与 α 和 β 位错的滑移平面分布的不对称性差异相关联。在太阳能电池表现出高 Voc 的情况下，α 位错和 β 位错的滑移面均受表面取向控制。在低 Voc 样品的情况下，β 位错的滑移面受 InGaP 的排序控制，而 α 位错的滑移面仍受表面取向控制。