Silicon (Si) is the most commonly used substrate material for fabricating integrated circuit; Si has very little fatigue effect. In the present work we developed pure NiFe₂O₄ and Cu, Co substituted NiFe₂O₄ thin films on Si substrate by metallo-organic decomposition (MOD) method using spin coating technique. The prepared thin films were characterized by XRD and Raman spectrometer for structural and phase identification. The topography and grain distribution of the prepared samples were analyzed by atomic force microscope (AFM). Magnetic hysteresis loops were measured at 10 K and 300 K using Superconducting quantum interference device (SQUID). The magnetization and coercive field increased with Cu, Co substitution. Temperature dependent magnetization (M-T) was carried out by zero-field cooled (ZFC) and field – cooled (FC) method. ZFC measurements revels that blocking temperature of the thin films is above 350 K.

硅（Si）是制造集成电路最常用的衬底材料。Si具有很小的疲劳作用。在本工作中，我们通过旋涂技术通过金属有机分解（MOD）方法在Si基板上开发了纯NiFe ₂ O ₄和Cu，Co取代的NiFe ₂ O ₄薄膜。用XRD和拉曼光谱仪对制备的薄膜进行表征，以鉴定结构和相。用原子力显微镜（AFM）分析了所制备样品的形貌和晶粒分布。使用超导量子干涉仪在10 K和300 K下测量磁滞回线（乌贼）。磁化和矫顽场随铜，钴的取代而增加。温度相关的磁化（MT）通过零场冷却（ZFC）和场冷却（FC）方法进行。ZFC测量表明，薄膜的阻挡温度高于350K。