Abstract Silicon thin films with uniform Si(111) surface orientation (>95%) have been fabricated on amorphous substrates through aluminum-induced crystallization. However, Si(100) oriented films have not been fabricated with nearly the same degree of uniformity. For Al and Si thicknesses below 50 nm, Si nucleation has been previously proposed to initiate at the Al/substrate interface, suggesting that a cubic (100) oriented substrate could promote highly uniform Si(100) oriented thin film fabrication. Using two single crystalline (100) oriented substrates, strontium titanate and germanium, we demonstrate how substrate surface orientation and surface termination affect the crystallization and preferential orientation of silicon thin films fabricated by aluminum-induced crystallization.

中文翻译：

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在单晶立方衬底上通过铝诱导结晶控制硅薄膜的表面取向

摘要 通过铝诱导结晶在非晶衬底上制备了具有均匀 Si(111) 表面取向 (>95%) 的硅薄膜。然而，Si(100) 取向的薄膜还没有制造出几乎相同程度的均匀性。对于低于 50 nm 的 Al 和 Si 厚度，先前已提议在 Al/衬底界面处开始 Si 成核，这表明立方 (100) 取向衬底可以促进高度均匀的 Si(100) 取向薄膜制造。使用两个单晶 (100) 取向的衬底，钛酸锶和锗，我们展示了衬底表面取向和表面终止如何影响通过铝诱导结晶制造的硅薄膜的结晶和优先取向。