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Enhanced Thermoelectric Performance of n -Type Polycrystalline SnSe via MoCl 5 Doping
Journal of Electronic Materials ( IF 2.1 ) Pub Date : 2019-11-12 , DOI: 10.1007/s11664-019-07795-2
Tong Shen , Kang Yin Li , Zi Jie Chen , Hai Fei Wu , Jian Xiao Si

n-Type polycrystalline SnSe0.95-x%MoCl5 (x = 0.5, 1.0, 1.5, 2) samples have been synthesized by melting and hot-pressing. The effect of MoCl5 doping on thermoelectric properties is investigated. The multipoint defects of Clse and Mosn increased the carrier concentration from 5.3 × 1017 cm−3 (p-type) in undoped SnSe to 1.76 × 1019 cm−3 (n-type) in SnSe0.95-1.5%MoCl5 sample, which leads to increased electrical conductivity. Moreover, the multipoint defects enhanced the phonon scattering and resulted in a suppression of the thermal conductivity. As a result, a peak value ZT of 0.66 was obtained at 773 K for SnSe0.95-1%MoCl5. These results show that MoCl5 could be an effective dopant for improving the thermoelectric performance of n-type SnSe.

中文翻译:

MoCl 5掺杂增强n型多晶SnSe的热电性能

 通过熔融和热压合成了n型多晶SnSe 0.95 - x%MoCl 5x = 0.5、1.0、1.5、2)样品。研究了MoCl 5掺杂对热电性能的影响。Cl se和Mo sn的多点缺陷使载流子浓度从未掺杂的SnSe中的5.3×10 17  cm -3p型)增加到SnSe中的1.76×10 19  cm -3n型)0.95 -1.5%MoCl 5样品,导致电导率增加。此外,多点缺陷增强了声子的散射,并导致热导率的降低。结果,对于SnSe 0.95 -1%MoCl 5,在773 K下获得0.66的峰值ZT。这些结果表明,MoCl 5可以作为改善n型SnSe的热电性能的有效掺杂剂。
更新日期:2019-12-21
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