Abstract

We report direct current (DC) and microwave performance of a 50-nm gate length (L_g) quaternary-based InAlGaN/GaN/AlGaN high-electron-mobility transistor (HEMT) on SiC substrate with SiN passivation and by using a T-gate. The proposed HEMT structure is simulated using industry-standard Synopsys Sentaurus technology computer-aided design (TCAD). The regrown n++ GaN source/drain ohmic contacts show a peak drain current density (I_dmax) of 2.9 A/mm along with low on-resistance of 0.49 Ω mm. A record power gain cut-off frequency (f_max) of 425 GHz along with current gain cut-off frequency (f_t) of 310 GHz are obtained by the substantial reduction in the device's intrinsic and extrinsic parasitic resistances and capacitances. A very thin 7-nm In_0.13Al_0.83Ga_0.04N quaternary barrier with an AlGaN back-barrier structure effectively mitigates the short-channel effect with an improved breakdown voltage (V_BR) of 38 V. The prominent DC and microwave characteristics of the proposed HEMT make it an appropriate candidate for next-generation high-power millimeter-wave electronics.

中文翻译：

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用于高速和大功率应用的InAlGaN / GaN / AlGaN双异质结高电子迁移率晶体管（HEMT）的四级势垒研究

抽象的

我们报告了具有SiN钝化并使用T-钝化的SiC衬底上的50 nm栅极长度（L _g）的四元基InAlGaN / GaN / AlGaN高电子迁移率晶体管（HEMT）的直流电（DC）和微波性能。门。拟议的HEMT结构是使用行业标准Synopsys Sentaurus技术计算机辅助设计（TCAD）进行仿真的。重新生长的n ++ GaN源极/漏极欧姆接触显示出2.9 A / mm的峰值漏极电流密度（I _dmax）和0.49Ωmm的低导通电阻。425 GHz的记录功率增益截止频率（f _max）和电流增益截止频率（f _t通过显着降低器件的本征和非本征寄生电阻和电容，可以获得310 GHz的频率）。具有AlGaN背势垒结构的7nm In _0.13 Al _0.83 Ga _0.04 N非常薄的四级势垒可以有效地缓解短沟道效应，并具有38 V的更高击穿电压（V _BR）。提议的HEMT使其成为下一代大功率毫米波电子设备的合适候选者。