A transport model for a transverse electron beam-pumped semiconductor laser has been developed. The model incorporates spatial dependencies of the power deposition from the beam as well as a three-dimensional model of the gain medium and the field intensity of the photons produced by stimulated emission in the oscillation cavity. This model accounts for spatial inhomogeneities and has been solved for a variety of pumping strengths. The model was developed so that it can be benchmarked with electron beam pumping. The dominant mechanisms for the production of electron–hole pair production within the semiconductor material is similar to the dominant mechanisms for the production of electron–hole production using ion beams. Thus, the model can be extended to fission fragment ion pumping of semiconductor lasers in order to model a nuclear-pumped laser/reactor system.

中文翻译：

---

横向电子束泵浦半导体激光器的输运模型

已经开发了横向电子束泵浦半导体激光器的传输模型。该模型结合了来自光束的功率沉积的空间依赖性以及增益介质的三维模型和振荡腔中受激发射产生的光子的场强。该模型解释了空间不均匀性，并已针对各种泵送强度进行了求解。该模型的开发使其可以用电子束泵浦进行基准测试。在半导体材料中产生电子-空穴对的主要机制类似于使用离子束产生电子-空穴的主要机制。因此，