Abstract

The development of three-dimensional large-scale integration is technically contingent upon the optimization of through-silicon via (TSV) performance. One of the intriguing challenges in the fabrication of Cu-TSV is the minimization of copper protrusion after heat treatment of TSV or any thermal cycle. Plastic behavior of copper in the temperature range of the annealing process causes the copper to protrude out of the via and damage the upper layers. Since using copper and silicon as the main constituents of the Cu-TSV is inevitable, the best solution to the copper protrusion seems to be confined to finding the best material for the barrier. The barrier is basically a liner preventing copper diffusion into the silicon. However, the material of the barrier must be selected wisely in order to assign multiple tasks to it, including the prevention of the copper protrusion. In this paper, the effects of the barrier properties on copper protrusion are evaluated, and the most proper materials for the barrier of Cu-TSV are suggested. A physical explanation of the protrusion phenomenon and the way that barrier material can minimize the protrusion are also presented.

中文翻译：

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评估Cu-TSV阻挡层材料作为铜凸出的解决方案

抽象的

三维大规模集成的发展在技术上取决于硅通孔（TSV）性能的优化。Cu-TSV的制造中一个引人入胜的挑战之一是在TSV热处理或任何热循环后最小化铜突起。铜在退火过程的温度范围内的塑性行为会导致铜从通孔中突出并损坏上层。由于不可避免地要使用铜和硅作为Cu-TSV的主要成分，因此似乎最好的铜突起解决方案仅限于寻找用于阻挡层的最佳材料。阻挡层基本上是防止铜扩散到硅中的衬里。但是，必须明智地选择屏障的材料，以便为其分配多项任务，包括防止铜突出。在本文中，评估了阻挡性能对铜突起的影响，并提出了最合适的Cu-TSV阻挡材料。还介绍了突出现象的物理解释，以及阻挡材料可以使突出最小化的方式。