Potassium (K) metal anodes suffer from a challenging problem of dendrite growth. Here, it is demonstrated that a tailored current collector will stabilize the metal plating-stripping behavior even with a conventional KPF6 -carbonate electrolyte. A 3D copper current collector is functionalized with partially reduced graphene oxide to create a potassiophilic surface, the electrode being denoted as rGO@3D-Cu. Potassiophilic versus potassiophobic experiments demonstrate that molten K fully wets rGO@3D-Cu after 6 s, but does not wet unfunctionalized 3D-Cu. Electrochemically, a unique synergy is achieved that is driven by interfacial tension and geometry: the adherent rGO underlayer promotes 2D layer-by-layer (Frank-van der Merwe) metal film growth at early stages of plating, while the tortuous 3D-Cu electrode reduces the current density and geometrically frustrates dendrites. The rGO@3D-Cu symmetric cells and half-cells achieve state-of-the-art plating and stripping performance. The symmetric rGO@3D-Cu cells exhibit stable cycling at 0.1-2 mA cm-2 , while baseline Cu prematurely fails when the current reaches 0.5 mA cm-2 . The half-cells cells of rGO@3D-Cu (no K reservoir) are stable at 0.5 mA cm-2 for 10 000 min (100 cycles), and at 1 mA cm-2 for 5000 min. The baseline 3D-Cu, planar rGO@Cu, and planar Cu foil fails after 5110, 3012, and 1410 min, respectively.

中文翻译：

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碳酸盐电解质中无树突的钾金属阳极。

钾（K）金属阳极遭受树枝状晶体生长的挑战性问题。在此证明，即使使用常规的KPF 6-碳酸盐电解质，定制的集电器也将稳定金属镀层剥离行为。用部分还原的氧化石墨烯对3D铜集电器进行功能化，以形成一个钾亲表面，电极表示为rGO @ 3D-Cu。亲钾性与疏油性实验表明，熔融K在6 s后完全润湿rGO @ 3D-Cu，但不润湿未官能化的3D-Cu。电化学上，通过界面张力和几何形状实现了独特的协同作用：粘附的rGO底层促进了电镀早期阶段2D层（Frank-van der Merwe）金属膜的生长，弯曲的3D-Cu电极降低了电流密度，并在几何上挫败了树枝状晶体。rGO @ 3D-Cu对称池和半池实现了最先进的电镀和剥离性能。对称的rGO @ 3D-Cu电池在0.1-2 mA cm-2处显示稳定的循环，而当电流达到0.5 mA cm-2时基线Cu过早失效。rGO @ 3D-Cu（无K储库）的半电池在0.5 mA cm-2下稳定1万分钟（100个循环），在1 mA cm-2下稳定5000分钟。基线3D-Cu，平面rGO @ Cu和平面Cu箔分别在5110、3012和1410分钟后失效。而当电流达到0.5 mA cm-2时，基线Cu过早失效。rGO @ 3D-Cu（无K储库）的半电池在0.5 mA cm-2下稳定1万分钟（100个循环），在1 mA cm-2下稳定5000分钟。基线3D-Cu，平面rGO @ Cu和平面Cu箔分别在5110、3012和1410分钟后失效。而当电流达到0.5 mA cm-2时，基线Cu过早失效。rGO @ 3D-Cu（无K储库）的半电池在0.5 mA cm-2下稳定1万分钟（100个循环），在1 mA cm-2下稳定5000分钟。基线3D-Cu，平面rGO @ Cu和平面Cu箔分别在5110、3012和1410分钟后失效。