Abstract A new bismuth based layered structure compound, Bi2YZrVO9, synthesized by the mixed oxide reaction method, is found to crystallize in the orthorhombic crystal system. The characteristic Nyquist plots suggest the contribution of only grains to the electrical properties up to 400 °C and both grains and grain boundaries at higher temperatures. Based on impedance spectroscopy data and complex permittivity plot, the Cole-Cole model was used to analyze the contributions of grains and grain boundaries to the resistive and capacitive properties of the material. Analysis of electrical conductivity, using Jonscher’s power law, suggests the correlated barrier hopping being the dominant conduction mechanism in the compound. The activation energy for the conduction process in the range of 0.97 eV–0.75 eV corresponding to the frequency range 1 kHz–1 MHz suggest the role of oxygen vacancies in the conduction process.

中文翻译：

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Bi2YZrVO9陶瓷的结构和电学特性

摘要 通过混合氧化物反应法合成了一种新型铋基层状结构化合物Bi2YZrVO9，该化合物在正交晶系中结晶。特征 Nyquist 图表明只有晶粒对高达 400 °C 的电性能有贡献，并且在较高温度下晶粒和晶界都有贡献。基于阻抗谱数据和复介电常数图，Cole-Cole 模型用于分析晶粒和晶界对材料电阻和电容特性的贡献。使用 Jonscher 幂律对电导率的分析表明，相关的势垒跳跃是化合物中的主要传导机制。传导过程的活化能在 0.97 eV–0 范围内。