This work studies photogenerated carrier dynamics in gold nanoparticle (AuNP)-decorated mono- to few-layer transition metal dichalcogenide (TMD) nanosheets using transient absorption spectroscopy (TA). TA unveiled the presence of a long-lived photoinduced absorption (PIA) feature in both MoSe₂ and WSe₂ decorated with covalently bound AuNPs. This long-lived PIA feature emerges only from direct Au interband excitation in AuNP-decorated MoSe₂ and WSe₂; it does not manifest from intraband excitation nor in AuNP-decorated MoS₂ or WS₂. Based on X-ray/ultraviolet photoelectron spectroscopy and previous theoretical studies, it is proposed that this PIA signature arises from hot hole transfer from the AuNP to the adjacent TMD, producing a charge-separated state. This suggests charge separation at the metal–semiconductor interface may be used to extend the lifetime of interband excitation generated hot holes. This development could represent an important advance in harnessing plasmonic dissipation pathways to generate long-lived carriers suited for solar-driven light harvesting and catalysis.

中文翻译：

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纳米金修饰过渡金属二硫属化物纳米片中的等离子热空穴转移。

这项工作使用瞬态吸收光谱法（TA）研究了金纳米粒子（AuNP）装饰的单层至几层过渡金属二硫化碳（TMD）纳米片中的光生载流子动力学。TA揭示了在以共价键结合的AuNPs装饰的MoSe ₂和WSe ₂中均存在长寿命的光诱导吸收（PIA）功能。这种长寿命的PIA功能仅在AuNP装饰的MoSe ₂和WSe _2中直接由Au带间激发而出现。它既没有出现在带内激励中，也没有出现在AuNP装饰的MoS ₂或WS _2中。基于X射线/紫外线光电子能谱和先前的理论研究，有人提出该PIA标记是由于热空穴从AuNP转移到相邻的TMD而产生的，从而产生了电荷分离的状态。这表明在金属-半导体界面处的电荷分离可用于延长带间激励产生的热孔的寿命。这一发展可能代表着利用等离激元耗散途径产生适用于太阳能驱动的光收集和催化的长寿命载流子的重要进展。