Smooth 200 nm thick N-polar InGaN films were grown by metal–organic chemical vapor deposition (MOCVD) on sapphire using a digital approach consisting of a constant In, Ga, and N precursor flow with pulsed injection of H₂ into the N₂ carrier gas. Using this growth scheme, the H₂ injection time was altered and the effect on the morphology and indium incorporation in the films observed. The effect of periodic insertion of additional GaN inter-layers on the surface morphology of the InGaN layers was also studied.

中文翻译：

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MOCVD法优化厚N极InGaN的数字生长

使用数字方法，通过恒定的In，Ga和N前驱体流动以及将H ₂脉冲注入N ₂载流子，在蓝宝石上通过金属有机化学气相沉积（MOCVD）来生长光滑的200 nm厚N极InGaN薄膜。气体。使用这种生长方案，改变了H _2的注入时间，并观察了对薄膜中的形态和铟掺入的影响。还研究了周期性插入额外的GaN中间层对InGaN层表面形态的影响。