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Design and performance enhancement of doping-less field effect transistor with the help of negative capacitance technique
Applied Physics A ( IF 1.810 ) Pub Date : 2019-12-17 , DOI: 10.1007/s00339-019-3229-x
Lubna Gajal; Naveen Kumar; S. Intekhab Amin; Sunny Anand

The performance exploration of doping-less negative capacitance FET (NC-FET) has been proposed for the novelty of an exceedingly low power consumption device. A ferroelectric material, PZT (lead zirconate titanate), has been used as a gate insulator to perceive the effects of negative capacitance, and thus doping-less FET is modified into doping-less NC-FET for low power consumption. Ferroelectric materials are similar to dielectric material except for the property of polarization, and PZT gives adequate polarization rate with high dielectric capacitance and better reliability. In this pursuit, hysteresis behavior depends on the thickness of PZT (tFE) therefore suitable tuning of ferroelectric thickness is an important design parameter to optimize the device performance to achieve lower subthreshold swing (SS < 60 mV) at lower threshold voltage for the proposed doping-less NC-FET device. In addition, the thickness of PZT is varied for further improvement where it shows higher tFE values improve the hysteretic behavior and augmented value of PZT thickness preserve the device in a non-hysteretic mode which is responsible for the absolute improvement in this proposed device. After tFE = 6.23 × 10−5 cm, the operation of the proposed device drives the hysteretic mode. In this context, the electrical properties of the device have been inspected to demonstrate the hysteretic and non-hysteretic action.
更新日期:2019-12-17

 

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