A thermal pyrolysis method, prior to a conventional rapid thermal annealing (RTA) treatment, was developed for octadecylphoshponic acid (ODPA)-modified Si samples. The thermal pyrolysis could break P−C linkage at 500 °C and release carbon impurities from silicon surfaces, because of its weak bonding energy (∼ 260 kJ/mol) in ODPA molecules. The results show that large amounts (> 60%) of C impurities are successfully eliminated. Hall effect measurements suggest that the electrical activation rate of P dopants rises up to 56.7% from 3.8%, while all C-related defects at 133 meV below the conduction band are excluded. The calculated ionization rate of P dopants is approximately 83%. The resultant ∼ 17%, assigned to C_i−P_s defects, could be further minimized by extending RTA time. Therefore, it is promising to manufacture defect-free doped Si materials by the thermal pyrolysis, together with RTA treatments.

在常规的快速热退火（RTA）处理之前，开发了一种热裂解方法，用于十八烷基膦酸（ODPA）改性的Si样品。由于热裂解在ODPA分子中的键能很弱（〜260 kJ / mol），因此热裂解可在500°C时断开P-C键并从硅表面释放碳杂质。结果表明，成功消除了大量（> 60％）的C杂质。霍尔效应测量表明，P掺杂剂的电活化率从3.8％上升到56.7％，而所有在133 mV导带以下的C相关缺陷都被排除在外。计算出的P掺杂物的电离率约为83％。结果约17％，分配给C _i -P _s缺陷，可以通过延长RTA时间来进一步减少。因此，有希望通过热解和RTA处理来制造无缺陷的掺杂Si材料。